Wideband Watt-Level Spatial Power-Combined Power Amplifier in SiGe BiCMOS Technology for Efficient mm-Wave Array Transmitters

The continued demand for high-speed wireless communications is driving the development of integrated high-power transmitters at millimeter wave (mm-Wave) frequencies. Si-based technologies allow achieving a high level of integration but usually provide insufficient generated RF power to compensate for the increased propagation and material losses at mm-Wave bands due to the relatively low breakdown voltage of their devices. This problem can be reduced significantly if one could combine the power of multiple active devices on each antenna element. However, conventional on-chip power combining networks have inherently high insertion losses reducing transmitter efficiency and limiting its maximum achievable output power.This work presents a non-conventional design approach for mm-Wave Si-based Watt-level power amplifiers that is based on novel power-combining architecture, where an array of parallel custom PA-cells suited on the same chip is interfaced to a single substrate integrated waveguide (to be a part of an antenna element). This allows one to directly excite TEm0 waveguide modes with high power through spatial power combining functionality, obviating the need for intermediate and potentially lossy on-chip power combiners. The proposed solution offers wide impedance bandwidth (50%) and low insertion losses (0.4 dB), which are virtually independent from the number of interfaced PA-cells. The work evaluates the scalability bounds of the architecture as well as discusses the critical effects of coupled non-identical PA-cells, which are efficiently reduced by employing on-chip isolation load resistors.The proposed architecture has been demonstrated through an example of the combined PA with four differential cascode PA-cells suited on the same chip, which is flip-chip interconnected to the combiner placed on a laminate. This design is implemented in a 0.25 um SiGe BiCMOS technology. The PA-cell has a wideband performance (38.6%) with both high peak efficiency (30%) and high saturated output power (24.9 dBm), which is the highest reported output power level obtained without the use of circuit-level power combining in Si-based technologies at Ka-band. In order to achieve the optimal system-level performance of the combined PA, an EM-circuit-thermal optimization flow has been proposed, which accounts for various multiphysics effects occurring in the joint structure. The final PA achieves the peak PAE of 26.7% in combination with 30.8 dBm maximum saturated output power, which is the highest achievable output power in practical applications, where the 50-Ohms load is placed on a laminate. The high efficiency (>20%) and output power (>29.8 dBm) over a wide frequency range (30%) exceed the state-of-the-art in Si-based PAs

Design methods for 60GHz beamformers in CMOS

The 60GHz band is promising for applications such as high-speed short-range wireless personal-area network (WPAN), real-time video streaming at rates of several-Gbps, automotive radar, and mm-Wave imaging, since it provides a large amount of bandwidth that can freely (i.e. without a license) be used worldwide. However, transceivers at 60GHz pose several additional challenges over microwave transceivers. In addition to the circuit design challenges of implementing high performance 60GHz RF circuits in mainstream CMOS technology, the path loss at 60GHz is significantly higher than at microwave frequencies because of the smaller size of isotropic antennas. This can be overcome by using phased array technology. This thesis studies the new concepts and design techniques that can be used for 60GHz phased array systems. It starts with an overview of various applications at mm-wave frequencies, such as multi-Gbps radio at 60GHz, automotive radar and millimeter-wave imaging. System considerations of mm-wave receivers and transmitters are discussed, followed by the selection of a CMOS technology to implement millimeter-wave (60GHz) systems. The link budget of a 60GHz WPAN is analyzed, which leads to the introduction of phased array techniques to improve system performance. Different phased array architectures are studied and compared. The system requirements of phase shifters are discussed. Several types of conventional RF phase shifters are reviewed. A 60GHz 4-bit passive phase shifter is designed and implemented in a 65nm CMOS technology. Measurement results are presented and compared to published prior art. A 60GHz 4-bit active phase shifter is designed and integrated with low noise amplifier and combiner for a phased array receiver. This is implemented in a 65nm CMOS technology, and the measurement results are presented. The design of a 60GHz 4-bit active phase shifter and its integration with power amplifier is also presented for a phased array transmitter. This is implemented in a 65nm CMOS technology. The measurement results are also presented and compared to reported prior art. The integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package is investigated. Experimental results are presented and discussed

Fully Integrated 60 GHz Power Amplifiers in 45nm SOI CMOS

With the rapid growth of consumer demand for high data rates and high speed communications, the wireless spectrum has become increasingly precious. This has promoted the evolution of new standards and modulation schemes to improve spectral e fficiency. The allocation of large bandwidths is an alternative to increase the channel capacity and data rate, however the availability of spectrum below 10 GHz is very limited. Recently, the 60 GHz spectrum has emerged as a potential candidate to support multi-Gb/s applications. It off ers 7 GHz of unlicensed spectrum, for development of Wireless Personal Area Networks (WPAN) and cellular backhauls. Meanwhile, the scaling and advancement of low-cost complementary metal-oxide semiconductor (CMOS) technologies has enabled the use of CMOS devices at millimeter wave frequencies and the integration of analogue and digital circuitry has created platform for single chip radio development. However, low power density, low optimum load resistance and poor quality integrated passives (due to lossy silicon substrate) make CMOS technology a poor candidate for power ampli fier (PA) design when, compared to silicon germanium and Group III-V technologies (gallium nitride, gallium arsenide and indium phosphide). In order to overcome the above mentioned challenges in CMOS, this thesis re-explores FET-stacking as a power combining technique at 60 GHz using 45nm silicon-on-insulator (SOI) CMOS for millimeter-wave PAs. The stacking approach enables the use of higher supply voltages to obtain higher output power, and its higher load line resistance Ropt allows for the use of low impedance transformation matching networks. The reliability of CMOS PA under large signal operation is also addressed and improved with the FET-stacking approach applied in this work. This thesis divides the millimeter-wave PA design problem in to two areas, active and passive, both of which are critically designed for optimum performance in terms of effi ciency and output power while taking device and substrate parasitics into consideration. A transistor unit cell combination topology, the 'Manifold', has been analyzed and applied in 45 nm SOI CMOS for large RF power transistor cells. Moreover, various topologies of slow wave coplanar waveguide (CPW) lines are analyzed and implemented on the SOI substrate to synthesize inductors for matching networks at 60 GHz. To demonstrate the active and passive design performance in 45nm SOI CMOS at 60 GHz, a two-stage cascode PA is presented. Measurement under continuous wave (CW) stimulus shows 18.2 dB gain, a 3 dB bandwidth of 20%, 14 dBm saturated output power at 22% peak power-added e fficiency (PAE). Moreover, to validate the FET-stacking analysis, a three-stack PA is designed and fabricated with an output performance of 8.8 dB gain, a 3 dB bandwidth of 20%, 16 dBm saturated output power at 14% peak PAE. Finally, a wideband three stage amplifi er is designed utilizing the two-stage cascode and three-stack PA, achieving 21.5 dB at gain over a fractional bandwidth of 20%, and 16 dBm saturated output power at 13.8% PAE

KEY FRONT-END CIRCUITS IN MILLIMETER-WAVE SILICON-BASED WIRELESS TRANSMITTERS FOR PHASED-ARRAY APPLICATIONS

Millimeter-wave (mm-Wave) phased arrays have been widely used in numerous wireless systems to perform beam forming and spatial filtering that can enhance the equivalent isotropically radiated power (EIRP) for the transmitter (TX). Regarding the existing phased-array architectures, an mm-Wave transmitter includes several building blocks to perform the desired delivered power and phases for wireless communication. Power amplifier (PA) is the most important building block. It needs to offer several advantages, e.g., high efficiency, broadband operation and high linearity. With the recent escalation of interest in 5G wireless communication technologies, mm-Wave transceivers at the 5G frequency bands (e.g., 28 GHz, 37 GHz, 39 GHz, and 60 GHz) have become an important topic in both academia and industry. Thus, PA design is a critical obstacle due to the challenges associated with implementing wideband, highly efficient and highly linear PAs at mm-Wave frequencies. In this dissertation, we present several PA design innovations to address the aforementioned challenges. Additionally, phase shifter (PS) also plays a key role in a phased-array system, since it governs the beam forming quality and steering capabilities. A high-performance phase shifter should achieve a low insertion loss, a wide phase shifting range, dense phase shift angles, and good input/output matching.Ph.D

Architectures and Integrated Circuits for Efficient, High-power "Digital'' Transmitters for Millimeter-wave Applications

This thesis presents architectures and integrated circuits for the implementation of energy-efficient, high-power "digital'' transmitters to realize high-speed long-haul links at millimeter-wave frequencies in nano-scale silicon-based processes

Design of SiGe HBT power amplifiers for microwave radar applications

A novel modification to the standard cascode amplifier architecture is presented in SiGe which allows for an optimal separation of gain and breakdown functions through the mixed breakdown cascade architecture, opening the door for moderate power amplifiers in SiGe. Utilizing this technique, a two-stage, high-gain amplifier operating at X-Band is fabricated and measured. The 20 dB of gain per stage represents the highest gain at X-Band at the time of publication. Additionally, a near one Watt power amplifier is designed and fabricated at X-Band, which represents the highest output power in SiGe at X-Band at time of publication. Related to the power amplifier design, thermal considerations are also investigated. The validity of utilizing lumped mutual thermal coupling in SiGe devices is presented. Using this finding, a thermal coupling model and network which are compliant for use with commonly available HBT models and circuit simulators is presented. This model and network is used to thermally optimize SiGe PA cells based upon layout spacing.Ph.D.Committee Member: John Cressler; Committee Member: John Papapolymerou; Committee Member: Joy Laskar; Committee Member: Thomas Morley; Committee Member: William Hun

Integrated Antennas and Active Beamformers Technology for mm-Wave Phased-Array Systems

In this thesis, based on the indoor channel measurements and ray-tracing modeling for the indoor mm-wave wireless communications, the challenges of the design of the radio in this band is studied. Considering the recently developed standards such as IEEE 802.15.3c, ECMA and WiGig at 60 GHz, the link budget of the system design for different classes of operation is done and the requirement for the antenna and other RF sections are extracted. Based on radiation characteristics of mm-wave and the fundamental limits of low-cost Silicon technology, it is shown that phased-array is the ultimate solution for the radio and physical layer of the mobile millimeter wave multi-Gb/s wireless networks. Different phased-array configurations are studied and a low-cost single-receiver array architecture with RF phase-shifting is proposed. A systematic approach to the analysis of the overall noise-figure of the proposed architecture is presented and the component technical requirements are derived for the system level specifications. The proposed on-chip antennas and antenna-in-packages for various applications are designed and verified by the measurement results. The design of patch antennas on the low-cost RT/Duroid substrate and the slot antennas on the IPD technologies as well as the compact on-chip slot DRA antenna are explained in the antenna design section. The design of reflective-type phase shifters in CMOS and MEMS technologies is explained. Finally, the design details of two developed 60 GHz integrated phased-arrays in CMOS technology are discussed. Front-end circuit blocks such as LNA, continuous passive reflective-type phase shifters, power combiner and variable gain amplifiers are investigated, designed and developed for a 60 GHz phased-array radio in CMOS technology. In the first design, the two-element CMOS phased-array front-ends based on passive phase shifting architecture is proposed and developed. In the second phased-array, the recently developed on-chip dielectric resonator antenna in our group in lower frequency is scaled and integrated with the front-end

Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication

Array Architectures and Physical Layer Design for Millimeter-Wave Communications Beyond 5G

Ever increasing demands in mobile data rates have resulted in exploration of millimeter-wave (mmW) frequencies for the next generation (5G) wireless networks. Communications at mmW frequencies is presented with two keys challenges. Firstly, high propagation loss requires base stations (BSs) and user equipment (UEs) to use a large number of antennas and narrow beams to close the link with sufficient received signal power. Consequently, communications using narrow beams create a new challenge in channel estimation and link establishment based on fine angular probing. Current mmW system use analog phased arrays that can probe only one angle at the time which results in high latency during link establishment and channel tracking. It is desirable to design low latency beam training by exploring both physical layer designs and array architectures that could replace current 5G approaches and pave the way to the communications for frequency bands in higher mmW band and sub-THz region where larger antenna arrays and communications bandwidth can be exploited. To this end, we propose a novel signal processing techniques exploiting unique properties of mmW channel, and show both theoretically, in simulation and experiments its advantages over conventional approaches. Secondly, we explore different array architecture design and analyze their trade-offs between spectral efficiency and power consumption and area. For comprehensive comparison, we have developed a methodology for optimal design of system parameters for different array architecture candidates based on the spectral efficiency target, and use these parameters to estimate the array area and power consumption based on the circuits reported in the literature. We show that the hybrid analog and digital architectures have severe scalability concerns in radio frequency signal distribution with increased array size and spatial multiplexing levels, while the fully-digital array architectures have the best performance and power/area trade-offs.The developed approaches are based on a cross-disciplinary research that combines innovation in model based signal processing, machine learning, and radio hardware. This work is the first to apply compressive sensing (CS), a signal processing tool that exploits sparsity of mmW channel model, to accelerate beam training of mmW cellular system. The algorithm is designed to address practical issues including the requirement of cell discovery and synchronization that involves estimation of angular channel together with carrier frequency offset and timing offsets. We have analyzed the algorithm performance in the 5G compliant simulation and showed that an order of magnitude saving is achieved in initial access latency for the desired channel estimation accuracy. Moreover, we are the first to develop and implement a neural network assisted compressive beam alignment to deal with hardware impairments in mmW radios. We have used 60GHz mmW testbed to perform experiments and show that neural networks approach enhances alignment rate compared to CS. To further accelerate beam training, we proposed a novel frequency selective probing beams using the true-time-delay (TTD) analog array architecture. Our approach utilizes different subcarriers to scan different directions, and achieves a single-shot beam alignment, the fastest approach reported to date. Our comprehensive analysis of different array architectures and exploration of emerging architectures enabled us to develop an order of magnitude faster and energy efficient approaches for initial access and channel estimation in mmW systems