Design, Characterization and Analysis of Component Level Electrostatic Discharge (ESD) Protection Solutions

Electrostatic Discharges (ESD) is a significant hazard to electronic components and systems. Based on a specific process technology, a given circuit application requires a customized ESD consideration that meets all the requirements such as the core circuit\u27s operating condition, maximum accepted leakage current, breakdown conditions for the process and overall device sizes. In every several years, there will be a new process technology becomes mature, and most of those new technology requires custom design of effective ESD protection solution. And usually the design window will shrinks due to the evolving of the technology becomes smaller and smaller. The ESD related failure is a major IC reliability concern and results in a loss of millions dollars each year in the semiconductor industry. To emulate the real word stress condition, several ESD stress models and test methods have been developed. The basic ESD models are Human Body model (HBM), Machine Mode (MM), and Charge Device Model (CDM). For the system-level ESD robustness, it is defined by different standards and specifications than component-level ESD requirements. International Electrotechnical Commission (IEC) 61000-4-2 has been used for the product and the Human Metal Model (HMM) has been used for the system at the wafer level. Increasingly stringent design specifications are forcing original equipment manufacturers (OEMs) to minimize the number of off-chip components. This is the case in emerging multifunction mobile, industrial, automotive and healthcare applications. It requires a high level of ESD robustness and the integrated circuit (IC) level, while finding ways to streamline the ESD characterization during early development cycle. To enable predicting the ESD performance of IC\u27s pins that are directly exposed to a system-level stress condition, a new the human metal model (HMM) test model has been introduced. In this work, a new testing methodology for product-level HMM characterization is introduced. This testing framework allows for consistently identifying ESD-induced failures in a product, substantially simplifying the testing process, and significantly reducing the product evaluation time during development cycle. It helps eliminates the potential inaccuracy provided by the conventional characterization methodology. For verification purposes, this method has been applied to detect the failures of two different products. Addition to the exploration of new characterization methodology that provides better accuracy, we also have looked into the protection devices itself. ICs for emerging high performance precision data acquisition and transceivers in industrial, automotive and wireless infrastructure applications require effective and ESD protection solutions. These circuits, with relatively high operating voltages at the Input/Output (I/O) pins, are increasingly being designed in low voltage Complementary Metal-Oxide-Semiconductor (CMOS) technologies to meet the requirements of low cost and large scale integration. A new dual-polarity SCR optimized for high bidirectional blocking voltages, high trigger current and low capacitance is realized in a sub 3-V, 180-nm CMOS process. This ESD device is designed for a specific application where the operating voltage at the I/O is larger than that of the core circuit. For instance, protecting high voltage swing I/Os in CMOS data acquisition system (DAS) applications. In this reference application, an array of thin film resistors voltage divider is directly connected to the interface pin, reducing the maximum voltage that is obtained at the core device input down to ± 1-5 V. Its ESD characteristics, including the trigger voltage and failure current, are compared against those of a typical CMOS-based SCR. Then, we have looked into the ESD protection designs into more advanced technology, the 28-nm CMOS. An ESD protection design builds on the multiple discharge-paths ESD cell concept and focuses the attention on the detailed design, optimization and realization of the in-situ ESD protection cell for IO pins with variable operation voltages. By introducing different device configurations fabricated in a 28-nm CMOS process, a greater flexibility in the design options and design trade-offs can be obtained in the proposed topology, thus achieving a higher integration and smaller cell size definition for multi-voltage compatibility interface ESD protection applications. This device is optimized for low capacitance and synthesized with the circuit IO components for in-situ ESD protection in communication interface applications developed in a 28-nm, high-k, and metal-gate CMOS technology. ESD devices have been used in different types of applications and also at different environment conditions, such as high temperature. At the last section of this research work, we have performed an investigation of several different ESD devices\u27 performance under various temperature conditions. And it has been shown that the variations of the device structure can results different ESD performance, and some devices can be used at the high temperature and some cannot. And this investigation also brings up a potential threat to the current ESD protection devices that they might be very vulnerable to the latch-up issue at the higher temperature range

Chaotic Oscillations in CMOS Integrated Circuits

Chaos is a purely mathematical term, describing a signal that is aperiodic and sensitive to initial conditions, but deterministic. Yet, engineers usually see it as an undesirable effect to be avoided in electronics. The first part of the dissertation deals with chaotic oscillation in complementary metal-oxide-semiconductor integrated circuits (CMOS ICs) as an effect behavior due to high power microwave or directed electromagnetic energy source. When the circuit is exposed to external electromagnetic sources, it has long been conjectured that spurious oscillation is generated in the circuits. In the first part of this work, we experimentally and numerically demonstrate that these spurious oscillations, or out-of-band oscillations are in fact chaotic oscillations. In the second part of the thesis, we exploit a CMOS chaotic oscillator in building a cryptographic source, a random number generator. We first demonstrate the presence of chaotic oscillation in standard CMOS circuits. At radio frequencies, ordinary digital circuits can show unexpected nonlinear responses. We evaluate a CMOS inverter coupled with electrostatic discharging (ESD) protection circuits, designed with 0.5 μm CMOS technology, for their chaotic oscillations. As the circuit is driven by a direct radio frequency injection, it exhibits a chaotic dynamics, when the input frequency is higher than the typical maximum operating frequency of the CMOS inverter. We observe an aperiodic signal, a broadband spectrum, and various bifurcations in the experimental results. We analytically discuss the nonlinear physical effects in the given circuit : ESD diode rectification, DC bias shift due to a non-quasi static regime operation of the ESD PN-junction diode, and a nonlinear resonant feedback current path. In order to predict these chaotic dynamics, we use a transistor-based model, and compare the model's performance with the experimental results. In order to verify the presence of chaotic oscillations mathematically, we build on an ordinary differential equation model with the circuit-related nonlinearities. We then calculate the largest Lyapunov exponents to verify the chaotic dynamics. The importance of this work lies in investigating chaotic dynamics of standard CMOS ICs that has long been conjectured. In doing so, we experimentally and numerically give evidences for the presence of chaotic oscillations. We then report on a random number generator design, in which randomness derives from a Boolean chaotic oscillator, designed and fabricated as an integrated circuit. The underlying physics of the chaotic dynamics in the Boolean chaotic oscillator is given by the Boolean delay equation. According to numerical analysis of the Boolean delay equation, a single node network generates chaotic oscillations when two delay inputs are incommensurate numbers and the transition time is fast. To test this hypothesis physically, a discrete Boolean chaotic oscillator is implemented. Using a CMOS 0.5 μm process, we design and fabricate a CMOS Boolean chaotic oscillator which consists of a core chaotic oscillator and a source follower buffer. Chaotic dynamics are verified using time and frequency domain analysis, and the largest Lyapunov exponents are calculated. The measured bit sequences do make a suitable randomness source, as determined via National Institute of Standards and Technology (NIST) standard statistical tests version 2.1

Optimal design of a 2.4 GHz CMOS low noise amplifier

In most RF receivers, the Low Noise Amplifier (LNA) is normally the first component, whose performance is very critical. For the LNA architecture that uses source degeneration inductors and cascode topology, the performance depends largely on the performance of the inductors. All the parasitics associated with the inductors should be thoroughly analyzed and taken into consideration while designing the LNA. The work presented in this thesis can be broadly classified as follows: optimization of the LNA design with respect to all the parasitics associated with the on-chip spiral inductors, modeling high performance inductors, which are embedded in the silicon substrate and analysis of parasitic effects from the Electro Static Discharge (ESD) protection circuitry on the performance of the LNA. A methodology has been developed such that the LNA design can be optimized in the presence of an ESD protection circuitry in order to achieve the required input impedance match. This optimization procedure is presented for all possible placements of the ESD protection circuitry at the input of the LNA, that is, with respect to the gate inductor being realized on-chip or off-chip or a combination of on-chip and off-chip inductors. The thesis presents the procedure to vary the source inductance and gate inductance values in the presence of parasitic ESD capacitance in order to optimize LNA design such that the required input impedance match is maintained

The PreAmplifier ShAper for the ALICE TPC-Detector

In this paper the PreAmplifier ShAper (PASA) for the Time Projection Chamber (TPC) of the ALICE experiment at LHC is presented. The ALICE TPC PASA is an ASIC that integrates 16 identical channels, each consisting of Charge Sensitive Amplifiers (CSA) followed by a Pole-Zero network, self-adaptive bias network, two second-order bridged-T filters, two non-inverting level shifters and a start-up circuit. The circuit is optimized for a detector capacitance of 18-25 pF. For an input capacitance of 25 pF, the PASA features a conversion gain of 12.74 mV/fC, a peaking time of 160 ns, a FWHM of 190 ns, a power consumption of 11.65 mW/ch and an equivalent noise charge of 244e + 17e/pF. The circuit recovers smoothly to the baseline in about 600 ns. An integral non-linearity of 0.19% with an output swing of about 2.1 V is also achieved. The total area of the chip is 18 mm$^2$ and is implemented in AMS's C35B3C1 0.35 micron CMOS technology. Detailed characterization test were performed on about 48000 PASA circuits before mounting them on the ALICE TPC front-end cards. After more than two years of operation of the ALICE TPC with p-p and Pb-Pb collisions, the PASA has demonstrated to fulfill all requirements