Simulation and Fabrication of Three Novel Micromechanical Sensors

This work focuses on the simulation, fabrication and characterization of novel microdevices for chemical and biological sensors for improved sensitivity, enhanced performance and applicability. Specifically, microbridge and microcoil sensors have been fabricated via advanced microfabrication technologies. Due to the potential application in chemical and biological sensing, the growth of gold and platinum nanowires during an electrolysis process have also been investigated. A microbridge can be considered as the head-to-head fusion of two cantilevers and the middle of the bridge would deform in a way similar to a microcantilever. The microbridge sensing device is more stable than the microcantilever, especially in turbulent or vibrational conditions, since both ends are fixed. The trade-off is the low ΔR/R change (sensitivity) of the microbridge compared to that of the microcantilever. Simulation of the microbridge has been conducted via Finite Element Analysis (FEA). The width, thickness and doping level of the piezoresistor play an important part in the sensitivity of the microbridge. Based on the simulation results and following standard microfabrication technology, microbridges have been fabricated. The detection of Hg2+ based on the microbridge platform was investigated for sensor validation. The microcoil hygrometer can be used as a universal tool for the detection of chemical species by depositing a chemical specific coating on one side of the coil. The coil movement can be readily observed by the human eye and it advances as a cost-effective and power-free device. A micro- or nano-scale sized coil provides an outstanding sensor platform with improved dynamic response, greatly reduced size, and the integration of micromechanical components with on-chip electronic circuitry. Following standard microfabrication techniques, an SiO2/Si/SU-8 microcoil has been fabricated. After surface modification by treating the coil with aminopropyltriethoxysilane (APS), the microcoil was exposed to acetic acid vapor in air for characterization. This microcoil device has a potential to be used as a novel microsensor for the detection of chemical and biological species both in air and in solutions. A self-assembled approach to grow gold and platinum nanowires across the gap of two electrodes on a surface using an electrolysis process has been investigated. In this process, the anode electrode is oxidized to form nanowires on the cathode. The DC offset, AC signal frequency and the space between the two electrodes all play important roles in the growth of the nanowires

Investigation and Integration of Piezoresistive Silicon Nanowires for MEMS applications

Ph.DDOCTOR OF PHILOSOPH

Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe2_{2} films

Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe$_{2}$), an exciting and unexplored 2D transition metal dichalcogenides (TMD) material, is particularly interesting because its scalable and low temperature growth process is compatible with silicon technology. Here, we explore the potential of thin PtSe$_{2}$ films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe$_{2}$ films grown by thermally assisted conversion of Pt at a CMOS-compatible temperature of 400{\deg}C. We report high negative gauge factors of up to -84.8 obtained experimentally from PtSe$_{2}$ strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe$_{2}$ membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory (DFT) calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe$_{2}$ as a very promising candidate for future NEMS applications, including integration into CMOS production lines.Comment: 33 pages, 5 figures, including supporting information with 10 figure

High Frequency Thermally Actuated Single Crystalline Silicon Micromechanical Resonators with Piezoresistive Readout

Over the past decades there has been a great deal of research on developing high frequency micromechanical resonators. As the two most common and conventional MEMS resonators, piezoelectric and electrostatic resonators have been at the center of attention despite having some drawbacks. Piezoelectric resonators provide low impedances that make them compatible with other low impedance electronic components, however they have low quality factors and complicated fabrication processes. In case of electrostatic resonators, they have higher quality factors but the need for smaller transductions gaps complicates their fabrication process and causes squeezed film damping in Air. In addition, the operation of both these resonators deteriorates at higher frequencies. In this presented research, thermally actuated resonators with piezoresistive readout have been developed. It has been shown that not only do such resonators require a simple fabrication process, but also their performance improves at higher frequencies by scaling down all the dimensions of the structure. In addition, due to the internal thermo-electro-mechanical interactions, these active resonators can turn some of the consumed electronic power back into the mechanical structure and compensate for the mechanical losses. Therefore, such resonators can provide self-Q-enhancement and self-sustained-oscillation without the need for any electronic circuitry. In this research these facts have been shown both experimentally and theoretically. In addition, in order to further simplify the fabrication process of such structures, a new controlled batch fabrication method for fabricating silicon nanowires has been developed. This unique fabrication process has been utilized to fabricate high frequency, low power thermal-piezoresistive resonators. Finally, a new thermal-piezoresistive resonant structure has been developed that can operate inside liquid. This resonant structure can be utilized as an ultra sensitive biomedical mass sensor

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Publisher's version (útgefin grein)Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1 mbar pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure.Reykjavík UniversityPeer reviewe

Stencil lithography for bridging MEMS and NEMS

The damage inflicted to silicon nanowires (Si NWs) during the HF vapor etch release poses a challenge to the monolithic integration of Si NWs with higher-order structures, such as microelectromechanical systems (MEMS). This paper reports the development of a stencil lithography-based protection technology that protects Si NWs during prolonged HF vapor release and enables their MEMS integration. Besides, a simplified fabrication flow for the stencil is presented offering ease of patterning of backside features on the nitride membrane. The entire process on Si NW can be performed in a resistless manner. HF vapor etch damage to the Si NWs is characterized, followed by the calibration of the proposed technology steps for Si NW protection. The stencil is fabricated and the developed technology is applied on a Si NW-based multiscale device architecture to protectively coat Si NWs in a localized manner. Protection of Si NW under a prolonged (>3 h) HF vapor etch process has been achieved. Moreover, selective removal of the protection layer around Si NW is demonstrated at the end of the process. The proposed technology also offers access to localized surface modifications on a multiscale device architecture for biological or chemical sensing applications

Pressure sensing of silicon nanowires

Nanostructures made from crystalline silicon, especially in the form of nanowires (SiNWs), have shown great potential as pressure sensors due to their unique properties such as high sensitivity, small size, and low power consumption. When a force is applied to SiNWs, they undergo a mechanical deformation that results in a change in their electrical resistance. Such an effect has been referred to as the piezoresistance effect. This change in resistance can be measured and used to determine the amount of pressure being applied. By integrating these nanowires into a sensor device, it is possible to create a highly sensitive pressure sensor that can be used in a variety of applications such as in medical devices, aerospace technology, and robotics. Many available techniques can be applied to fabricate such SiNWs. One of the simplest ones is the so-called metal-assisted-chemical-etching (MACE) which has gained significant attention in recent years. This process involves the use of a metal catalyst, such as silver, to etch silicon in a controlled manner to produce nanowires with high aspect ratios. The nanowires can be integrated with other materials to create a flexible and stretchable sensor that can conform to curved surfaces and be used in a variety of applications. One advantage of using MACE to fabricate silicon nanowires is that it is a low-cost and scalable process. This makes it possible to produce large quantities of nanowires at a low cost, which is important for commercial applications. This thesis describes the fabrication of SiNWs using MACE and applications of the SiNWs as an accurate and sensitive pressure sensor for an isostatic and uniaxial load. Its use was further extended to fabricate a novel, small, and compact, breath sensor that could potentially have an impact on sleep research