4,144 research outputs found

    Depth, balancing, and limits of the Elo model

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    -Much work has been devoted to the computational complexity of games. However, they are not necessarily relevant for estimating the complexity in human terms. Therefore, human-centered measures have been proposed, e.g. the depth. This paper discusses the depth of various games, extends it to a continuous measure. We provide new depth results and present tool (given-first-move, pie rule, size extension) for increasing it. We also use these measures for analyzing games and opening moves in Y, NoGo, Killall Go, and the effect of pie rules

    Depth, balancing, and limits of the Elo model

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    International audience—Much work has been devoted to the computational complexity of games. However, they are not necessarily relevant for estimating the complexity in human terms. Therefore, human-centered measures have been proposed, e.g. the depth. This paper discusses the depth of various games, extends it to a continuous measure. We provide new depth results and present tool (given-first-move, pie rule, size extension) for increasing it. We also use these measures for analyzing games and opening moves in Y, NoGo, Killall Go, and the effect of pie rules

    Generation and detection of a sub-Poissonian atom number distribution in a one-dimensional optical lattice

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    We demonstrate preparation and detection of an atom number distribution in a one-dimensional atomic lattice with the variance 14-14 dB below the Poissonian noise level. A mesoscopic ensemble containing a few thousand atoms is trapped in the evanescent field of a nanofiber. The atom number is measured through dual-color homodyne interferometry with a pW-power shot noise limited probe. Strong coupling of the evanescent probe guided by the nanofiber allows for a real-time measurement with a precision of ±8\pm 8 atoms on an ensemble of some 10310^3 atoms in a one-dimensional trap. The method is very well suited for generating collective atomic entangled or spin-squeezed states via a quantum non-demolition measurement as well as for tomography of exotic atomic states in a one-dimensional lattice

    Quantum Dot Enhanced Epitaxial Lift-Off Solar Cells

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    Embedded nanostructures such as quantum dots (QDs) have been studied for many applications in solar cells including enhanced mini-band absorption in intermediate-band solar cells and current matching in multi junction cells. The major drawbacks of using such techniques to decrease intrinsic solar cell loss mechanisms are twofold: first, it is difficult to maintain partially populated states using QDs due to a quick thermal extraction of carriers; second, QDs have a weak absorption which necessitates a near-perfect control of QD growth mechanisms to carefully ensure a balance between dot size and density. One avenue for improving absorption into QDs is to utilize a thin cell with a back surface reflector in order to increase the effective optical path length (OPL) of light through the QD region, which has the potential to increase absorption into QD states. One method for the processing of thin solar cells that has been experimentally demonstrated on large 4-6” wafers is epitaxial lift-off, which takes advantage of an inverted growth and a wet chemical etch of a sacrificial release layer to remove the substrate. In this thesis, 0.25 cm2 InAs/GaAs QD cells were grown on 4” wafers, fabricated, and processed by epitaxial lift off, creating thin and flexible devices. Materials and optical characterization techniques such as atomic force microscopy and photoluminescence were used on test structures prior to and following ELO, and analysis indicated that QD optical coherence and material quality after ELO processing were preserved, although non-uniform. This was concluded to be caused by the radial thermal profile of the growth reactor, through which spatial dependence led to local variations in QD quality and size across the 4” wafer, indicative of the high temperature sensitivity of QDs. Transmission electron microscopy measurements were used to investigate defects and dislocations throughout the QD device structure that would impact performance, and showed a higher concentration of defects in regions of the wafer subject to a higher temperature during growth. A similar pattern of radial dependence was observed in solar cell devices by electrical characterization. Current-voltage measurements under one-sun AM0 illumination were taken on several cells around the wafer, showing a statistical variation in solar cell device metrics dependent on wafer position. Spectral responsivity measurements show an established cavity mode pattern in sub-host bandgap wavelengths, which is discussed as an enhancement due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23 mA/cm2. In addition to optical, materials, and electrical characterization, QD and baseline ELO devices were exposed to alpha radiation to gauge the effects of a harmful environment on cell performance. The QD device exhibited a remaining factor increase of 2 % (absolute) in conversion efficiency over the baseline device at an end of life alpha particle fluence of 5x109α/cm2/s. In addition, linear temperature coefficients for solar cell figures of merit were extracted as a function of increasing α fluence. At a fluence of 5x108α/cm2/s, the QD device showed an efficiency temperature coefficient 0.2 %/°C higher (absolute) than the baseline, indicating that the inclusion of QDs could improve the radiation and temperature tolerance of solar cell devices used for space applications

    High-sensitivity monitoring of micromechanical vibration using optical whispering gallery mode resonators

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    The inherent coupling of optical and mechanical modes in high finesse optical microresonators provide a natural, highly sensitive transduction mechanism for micromechanical vibrations. Using homodyne and polarization spectroscopy techniques, we achieve shot-noise limited displacement sensitivities of 10^(-19) m Hz^(-1/2). In an unprecedented manner, this enables the detection and study of a variety of mechanical modes, which are identified as radial breathing, flexural and torsional modes using 3-dimensional finite element modelling. Furthermore, a broadband equivalent displacement noise is measured and found to agree well with models for thermorefractive noise in silica dielectric cavities. Implications for ground-state cooling, displacement sensing and Kerr squeezing are discussed.Comment: 25 pages, 8 figure

    Remote sensing by infrared heterodyne spectroscopy

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    The use of infrared heterodyne spectrocopy for the study of planetary atmospheres is discussed. Infrared heterodyne spectroscopy provides a convenient and sensitive method for measuring the true intensity profiles of atmospheric spectral lines. Application of radiative transfer theory to measured lineshapes can then permit the study of molecular abundances, temperatures, total pressures, excitation conditions, and dynamics of the regions of line formation. The theory of formation of atmospheric spectral lines and the retrieval of the information contained in these molecular lines is illustrated. Notable successes of such retrievals from infrared heterodyne measurements on Venus, Mars, Jupiter and the Earth are given. A discussion of developments in infrared heterodyne technology is also presented

    Molecular beam epitaxial growth of monocrystalline MgxCd1-xTe/MgyCd1-yTe (x<y) double heterostructures and solar cells

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    abstract: This dissertation details a study of wide-bandgap molecular beam epitaxy (MBE)-grown single-crystal MgxCd1-xTe. The motivation for this study is to open a pathway to reduced $/W solar power generation through the development of a high-efficiency 1.7-eV II-VI top cell current-matched to low-cost 1.1-eV silicon. This paper reports the demonstration of monocrystalline 1.7-eV MgxCd1-xTe/MgyCd1-yTe (y>x) double heterostructures (DHs) with a record carrier lifetime of 560 nanoseconds, along with a 1.7-eV MgxCd1-xTe/MgyCd1-yTe (y>x) single-junction solar cell with a record active-area efficiency of 15.2% and a record open-circuit voltage (VOC) of 1.176 V. A study of indium-doped n-type 1.7-eV MgxCd1-xTe with a carrier activation of up to 5 × 1017 cm-3 is presented with promise to increase device VOC. Finally, this paper reports an epitaxial lift-off (ELO) technology using water-soluble MgTe for the creation of free-standing MBE-grown II-VI single-crystal CdTe and 1.7-eV MgxCd1-xTe solar cells freed from lattice-matched InSb(001) substrates. Photoluminescence (PL) spectroscopy measurements comparing intact and free-standing films reveal the survival of optical quality in CdTe DHs after ELO. This technology opens up several possibilities to drastically increase cell conversion efficiency through improved light management and transferability into monolithic multijunction devices. Lastly, this report will present considerations for future work in each of the study areas mentioned above.Dissertation/ThesisDoctoral Dissertation Materials Science and Engineering 201
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