Development of a 5V Digital Cell Library for use with the Peregrine Semiconductor Silicon-on-Sapphire Process

The scope of the thesis work presented here is to develop a standard digital cell library operable at 5V of power supply and up to the temperatures of 125C using Peregrine 0.5m2 3.3V CMOS process. Peregrine 0.5m process was selected as a result of its availability via commercial foundry at moderate cost radiation and high temperature tolerant properties. Testing data was obtained showing no measurable gate tunneling at gate voltages below 8.5V and no source to drain avalanche below 5.5V ensuring safe operation below the 5V design corners of 5.5V. Device geometries are selected to meet drive current requirement of 1mA and acceptable Ion/Ioff ratios at high temperature. Layouts for cells, schematic, symbolic and abstract views were generated. Timing, power and area characterization data is realized in several formats compatible with Cadence and Synopsys synthesizer, place & route and simulation tools. A test chip for delay chains with single input and multi-input combinatorial gates were designed and fabricated as a part of the validation on silicon. Measured data at room temperature is well in agreement with SignalStorm's data. At 125C, delay chains performed faster in silicon by up to 25% as compared with simulated data obtained using typical model. Device characteristics for rn and rp device are obtained and percentage variations in their Id-Vd characteristics with models are calculated. Variation in test data for the test chip as compared to the simulated data is observed to be consistent with the device current variation plotted across process corners. Adherence of the targeted design specifications (from simulation) with the actual measured values verifies the cell library's functionality, timing and power parameters.School of Electrical & Computer Engineerin

Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

X-ray characterization of BUSARD chip: A HV-SOI monolithic particle detector with pixel sensors under the buried oxide

This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage Silicon-On-Insulator (HV-SOI) process that allows the fabrication of a buried N+ diffusion below the Buried OXide (BOX) as a standard processing step. The first version of the chip, BUSARD-A, takes advantage of this buried diffusion as an ionizing particle sensor. It includes a small array of 13×13 pixels, with a pitch of 80 μm, and each pixel has one buried diffusion with a charge amplifier, discriminator with offset tuning and digital processing. The detector has several operation modes including particle counting and Time-over-Threshold (ToT). An initial X-ray characterization of the detector was carried out, obtaining several pulse height and ToT spectra, which then were used to perform the energy calibration of the device. The Molybdenum $_{α}$ emission was measured with a standard deviation of 127 e$^{-}$ of ENC by using the analog pulse output, and with 276 e$^{-}$ of ENC by using the ToT digital output. The resolution in ToT mode is dominated by the pixel-to-pixel variation

Design of 5v Digital Standard Cells And I/O Libraries for Military Standard Temperatures

The scope of this research work is to develop digital standard cell and I/O cell libraries operable at 5V power supply and operable up to 125�C using Peregrine 0.5um 3.3 V process. Device geometries are selected based on Ion/Ioff ratios at 125�C. The cell schematic, layout and abstracted views are generated for both the libraries The Standard cell and I/O libraries are characterized for timing and power and the characterization data is realized in various formats compatible with logic synthesis and place and route tools. The pads have been tested for robustness to ESD. A tutorial on abstraction of standard cells and IO cells is prepared using the Cadence Abstract Generator.School of Electrical & Computer Engineerin

Radiation Effects Measurement Test Structure using GF 32-nm SOI process

abstract: This thesis describes the design of a Single Event Transient (SET) duration measurement test-structure on the Global Foundries (previously IBM) 32-nm silicon-on insulator (SOI) process. The test structure is designed for portability and allows quick design and implementation on a new process node. Such a test structure is critical in analyzing the effects of radiation on complementary metal oxide semi-conductor (CMOS) circuits. The focus of this thesis is the change in pulse width during propagation of SET pulse and build a test structure to measure the duration of a SET pulse generated in real time. This test structure can estimate the SET pulse duration with 10ps resolution. It receives the input SET propagated through a SET capture structure made using a chain of combinational gates. The impact of propagation of the SET in a >200 deep collection structure is studied. A novel methodology of deploying Thick Gate TID structure is proposed and analyzed to build multi-stage chain of combinational gates. Upon using long chain of combinational gates, the most critical issue of pulse width broadening and shortening is analyzed across critical process corners. The impact of using regular standard cells on pulse width modification is compared with NMOS and/or PMOS skewed gates for the chain of combinational gates. A possible resolution to pulse width change is demonstrated using circuit and layout design of chain of inverters, two and three inputs NOR gates. The SET capture circuit is also tested in simulation by introducing a glitch signal that mimics an individual ion strike that could lead to perturbation in SET propagation. Design techniques and skewed gates are deployed to dampen the glitch that occurs under the effect of radiation. Simulation results, layout structures of SET capture circuit and chain of combinational gates are presented.Dissertation/ThesisMasters Thesis Electrical Engineering 201

Ultra-low Voltage Digital Circuits and Extreme Temperature Electronics Design

Certain applications require digital electronics to operate under extreme conditions e.g., large swings in ambient temperature, very low supply voltage, high radiation. Such applications include sensor networks, wearable electronics, unmanned aerial vehicles, spacecraft, and energyharvesting systems. This dissertation splits into two projects that study digital electronics supplied by ultra-low voltages and build an electronic system for extreme temperatures. The first project introduces techniques that improve circuit reliability at deep subthreshold voltages as well as determine the minimum required supply voltage. These techniques address digital electronic design at several levels: the physical process, gate design, and system architecture. This dissertation analyzes a silicon-on-insulator process, Schmitt-trigger gate design, and asynchronous logic at supply voltages lower than 100 millivolts. The second project describes construction of a sensor digital controller for the lunar environment. Parts of the digital controller are an asynchronous 8031 microprocessor that is compatible with synchronous logic, memory with error detection and correction, and a robust network interface. The digitial sensor ASIC is fabricated on a silicon-germanium process and built with cells optimized for extreme temperatures

Study of Soi Annular Mosfet

Annular transistors are enclosed geometry transistors which reduce device leakage by eliminating diffusion edges. Due to the asymmetry of these devices with respect to inner and outer terminals; this study evaluates the behavior of the annular transistor with respect to both the inner and outer drain terminals. Along with this, the effects of geometry of the device on the leakage current and kink effects, related to the NMOS SOS devices at various temperatures are evaluated. Performance of NMOS annular transistor across four different transistor lengths (L= 1.3um, 1.4um 1.5um and 1.6um) are studied along with comparison to a NMOS rectilinear transistors (L=1.4um) at room temperature (RT) and 275C. The experimental results demonstrated a decrease in threshold voltage between the annular transistor with an inner drain compared to the rectilinear transistor by 20% at RT and 33% at 275C. Threshold voltage for an annular transistor with an inner drain is greater than the same transistor with an outer drain by 2% at RT and 3% at 275C. The Ion/Ioff ratio for annular devices with an inner drain compared to a rectangular device shows an improvement of 99% at both RT and 275C. The Ion/Ioff ratio for the same annular transistor with an inner drain verses an outer drain is greater by 75% at RT and 51% at 275C. The kink voltage for an annular transistor with an inner drain is greater than rectangular transistor by 2% at RT while 5% lower at 275C. Kink voltage for annular transistor with an outer drain is greater than the same transistor with an inner drain by 2% at RT and 1% at 275C. Early voltage (VA) for an annular transistor with an inner drain is greater than rectangular transistor by 22% at RT and 21% at 275C. VA for an annular transistor with an inner drain is greater than the same transistor with an outer drain by 22% at RT and 15% at 275C. Output resistance (rds) per unit width of an annular transistor with an inner drain is greater than rectilinear transistor by 77% at RT and 79% at 275C. rds for annular transistor with an inner drain is greater than that with an outer drain of the same device by 4% at RT and is lower by 25% at 275C. In conclusion when it is of the utmost importance to control leakage and device self gain annular transistors provide a significant improvement over the classical rectangular transistor. Some enhanced performance is observed when the inner contact is selected as the drain. It should also be noted that measurement accuracy precludes the taking of any conclusion where changes of less than 2% are observed.School of Electrical & Computer Engineerin

Journal of Telecommunications and Information Technology, 2000, nr 3,4

kwartalni

A surface-potential-based compact model for partially-depleted silicon-on-insulator MOSFETs

With the continuous scaling of CMOS technologies, Silicon-on-Insulator (SOI) technologies have become more competitive compared to bulk, due to their lower parasitic capacitances and leakage currents. The shift towards high frequency, low power circuitry, coupled with the increased maturity of SOI process technologies, have made SOI a genuinely costeffective solution for leading edge applications. The original STAG2 model, developed at the University of Southampton, UK, was among the first compact circuit simulation models to specifically model the behaviour of Partially-Depleted (PD) SOI devices. STAG2 was a robust, surface-potential based compact model, employing closed-form equations to minimise simulation times for large circuits. It was able to simulate circuits in DC, small signal, and transient modes, and particular care was taken to ensure that convergence problems were kept to a minimum. In this thesis, the ongoing development of the STAG model, culminating in the release of a new version, STAG3, is described. STAG3 is intended to make the STAG model applicable to process technologies down to 100nm. To this end, a number of major model improvements were undertaken, including: a new core surface potential model, new vertical and lateral field mobility models, quantum mechanical models, the ability to model non-uniform vertical doping profiles, and other miscellaneous effects relevant to deep submicron devices such as polysilicon depletion, velocity overshoot, and the reverse short channel effect.As with the previous versions of STAG, emphasis has been placed on ensuring that model equations are numerically robust, as well as closed-form wherever possible, in order to minimise convergence problems and circuit simulation times. The STAG3 model has been evaluated with devices manufactured in PD-SOI technologies down to 0.25?m, and was found to give good matching to experimental data across a range of device sizes and biases, whilst requiring only a single set of model parameters

Study of Radiation-Tolerant SRAM Design

Static Random Access Memories (SRAMs) are important storage components and widely used in digital systems. Meanwhile, with the continuous development and progress of aerospace technologies, SRAMs are increasingly used in electronic systems for spacecraft and satellites. Energetic particles in space environments can cause single event upsets normally referred as soft errors in the memories, which can lead to the failure of systems. Nowadays electronics at the ground level also experience this kind of upset mainly due to cosmic neutrons and alpha particles from packaging materials, and the failure rate can be 10 to 100 times higher than the errors from hardware failures. Therefore, it is important to study the single event effects in SRAMs and develop cost-effective techniques to mitigate these errors. The objectives of this thesis are to evaluate the current mitigation techniques of single event effects in SRAMs and develop a radiation-tolerant SRAM based on the developed techniques. Various radiation sources and the mechanism of their respective effects in Complementary Metal-Oxide Semiconductors(CMOS) devices are reviewed first in the thesis. The radiation effects in the SRAMs, specifically single event effects are studied, and various mitigation techniques are evaluated. Error-correcting codes (ECC) are studied in the thesis since they can detect and correct single bit errors in the cell array, and it is a effective method with low overhead in terms of area, speed, and power. Hamming codes are selected and implemented in the design of the SRAM, to protect the cells from single event upsets in the SRAM. The simulation results show they can prevent the single bit errors in the cell arrays with low area and speed overhead. Another important and vulnerable part of SRAMs in radiation environments is the sense amplifier. It may not generate the correct output during the reading operation if it is hit by an energetic particle. A novel fault-tolerant sense amplifier is introduced and validated with simulations. The results showed that the performance of the new design can be more than ten times better than that of the reference design. When combining the SRAM cell arrays protected with ECC and the radiation-tolerant hardened sense amplifiers, the SRAM can achieve high reliability with low speed and area overhead