1,501 research outputs found
Radiation safety based on the sky shine effect in reactor
In the reactor operation, neutrons and gamma rays are the most dominant radiation.
As protection, lead and concrete shields are built around the reactor. However, the radiation
can penetrate the water shielding inside the reactor pool. This incident leads to the occurrence
of sky shine where a physical phenomenon of nuclear radiation sources was transmitted
panoramic that extends to the environment. The effect of this phenomenon is caused by the
fallout radiation into the surrounding area which causes the radiation dose to increase. High
doses of exposure cause a person to have stochastic effects or deterministic effects. Therefore,
this study was conducted to measure the radiation dose from sky shine effect that scattered
around the reactor at different distances and different height above the reactor platform. In this
paper, the analysis of the radiation dose of sky shine effect was measured using the
experimental metho
DeepNVM++: Cross-Layer Modeling and Optimization Framework of Non-Volatile Memories for Deep Learning
Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic
random access memory (STT-MRAM) and spin-orbit torque magnetic random access
memory (SOT-MRAM) have significant advantages compared to conventional SRAM due
to their non-volatility, higher cell density, and scalability features. While
previous work has investigated several architectural implications of NVM for
generic applications, in this work we present DeepNVM++, a framework to
characterize, model, and analyze NVM-based caches in GPU architectures for deep
learning (DL) applications by combining technology-specific circuit-level
models and the actual memory behavior of various DL workloads. We present both
iso-capacity and iso-area performance and energy analysis for systems whose
last-level caches rely on conventional SRAM and emerging STT-MRAM and SOT-MRAM
technologies. In the iso-capacity case, STT-MRAM and SOT-MRAM provide up to
3.8x and 4.7x energy-delay product (EDP) reduction and 2.4x and 2.8x area
reduction compared to conventional SRAM, respectively. Under iso-area
assumptions, STT-MRAM and SOT-MRAM provide up to 2x and 2.3x EDP reduction and
accommodate 2.3x and 3.3x cache capacity when compared to SRAM, respectively.
We also perform a scalability analysis and show that STT-MRAM and SOT-MRAM
achieve orders of magnitude EDP reduction when compared to SRAM for large cache
capacities. Our comprehensive cross-layer framework is demonstrated on
STT-/SOT-MRAM technologies and can be used for the characterization, modeling,
and analysis of any NVM technology for last-level caches in GPUs for DL
applications.Comment: 12 pages, 10 figure
Gestión de jerarquías de memoria híbridas a nivel de sistema
Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu
Optimizing communication and capacity in a 3D stacked reconfigurable cache hierarchy
Journal ArticleCache hierarchies in future many-core processors are expected to grow in size and contribute a large fraction of overall processor power and performance. In this paper, we postulate a 3D chip design that stacks SRAM and DRAM upon processing cores and employs OS-based page coloring to minimize horizontal communication of cache data. We then propose a heterogeneous reconfigurable cache design that takes advantage of the high density of DRAM and the superior power/delay characteristics of SRAM to efficiently meet the working set demands of each individual core. Finally, we analyze the communication patterns for such a processor and show that a tree topology is an ideal fit that significantly reduces the power and latency requirements of the on-chip network. The above proposals are synergistic: each proposal is made more compelling because of its combination with the other innovations described in this paper. The proposed reconfigurable cache model improves performance by up to 19% along with 48% savings in network power
A Study on Performance and Power Efficiency of Dense Non-Volatile Caches in Multi-Core Systems
In this paper, we present a novel cache design based on Multi-Level Cell
Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set
capacity and associativity to use efficiently the full potential of MLC STTRAM.
We exploit the asymmetric nature of the MLC storage scheme to build cache lines
featuring heterogeneous performances, that is, half of the cache lines are
read-friendly, while the other is write-friendly. Furthermore, we propose to
opportunistically deactivate ways in underutilized sets to convert MLC to
Single-Level Cell (SLC) mode, which features overall better performance and
lifetime. Our ultimate goal is to build a cache architecture that combines the
capacity advantages of MLC and performance/energy advantages of SLC. Our
experiments show an improvement of 43% in total numbers of conflict misses, 27%
in memory access latency, 12% in system performance, and 26% in LLC access
energy, with a slight degradation in cache lifetime (about 7%) compared to an
SLC cache
HALLS: An Energy-Efficient Highly Adaptable Last Level STT-RAM Cache for Multicore Systems
Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising
alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility,
low leakage power, high density, and fast read speed. The STT-RAM's small
feature size is particularly desirable for the last-level cache (LLC), which
typically consumes a large area of silicon die. However, long write latency and
high write energy still remain challenges of implementing STT-RAMs in the CPU
cache. An increasingly popular method for addressing this challenge involves
trading off the non-volatility for reduced write speed and write energy by
relaxing the STT-RAM's data retention time. However, in order to maximize
energy saving potential, the cache configurations, including STT-RAM's
retention time, must be dynamically adapted to executing applications' variable
memory needs. In this paper, we propose a highly adaptable last level STT-RAM
cache (HALLS) that allows the LLC configurations and retention time to be
adapted to applications' runtime execution requirements. We also propose
low-overhead runtime tuning algorithms to dynamically determine the best
(lowest energy) cache configurations and retention times for executing
applications. Compared to prior work, HALLS reduced the average energy
consumption by 60.57% in a quad-core system, while introducing marginal latency
overhead.Comment: To Appear on IEEE Transactions on Computers (TC
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