High Resolution Microimaging with Pulsed Electrically-Detected Magnetic Resonance

The investigation of paramagnetic species (such as point defects, dopants, and impurities) in solid-state electronic devices is significant because of their effect on device performance. Conventionally, these species are detected and imaged using the electron spin resonance (ESR) technique. In many instances, ESR is not sensitive enough to deal with miniature devices having small numbers of paramagnetic species and high spatial heterogeneity. This limitation can in principle be overcome by employing a more sensitive method called electrically-detected magnetic resonance, which is based on measuring the effect of paramagnetic species on the electric current of the device while inducing electron spin-flip transitions. However, up until now, measurement of the current of the device could not reveal the spatial heterogeneity of its paramagnetic species. We provide here, for the first time, high resolution microimages of paramagnetic species in operating solar cells obtained through electrically-detected magnetic resonance. The method is based on unique microwave pulse sequences for excitation and detection of the electrical signal under a static magnetic field and powerful pulsed magnetic field gradients that spatially encode the electrical current of the sample. The approach developed here can be widely used in the nondestructive three-dimensional inspection and characterization of paramagnetic species in a variety of electronic devices.Comment: 19 pages, 4 figures +S

Fourier Transform Photocurrent Spectroscopy on Non-Crystalline Semiconductors

Automotive technology & trade

Cross-characterization for imaging parasitic resistive losses in thin-film photovoltaic modules

Thin-film photovoltaic (PV) modules often suffer from a variety of parasitic resistive losses in transparent conductive oxide (TCO) and absorber layers that significantly affect the module electrical performance. This paper presents the holistic investigation of resistive effects due to TCO lateral sheet resistance and shunts in amorphous-silicon (a-Si) thin-film PV modules by simultaneous use of three different imaging techniques, electroluminescence (EL), lock-in thermography (LIT) and light beam induced current (LBIC), under different operating conditions. Results from individual techniques have been compared and analyzed for particular type of loss channel, and combination of these techniques has been used to obtain more detailed information for the identification and classification of these loss channels. EL and LIT techniques imaged the TCO lateral resistive effects with different spatial sensitivity across the cell width. For quantification purpose, a distributed diode modeling and simulation approach has been exploited to estimate TCO sheet resistance from EL intensity pattern and effect of cell width on module efficiency. For shunt investigation, LIT provided better localization of severe shunts, while EL and LBIC given good localization of weak shunts formed by the scratches. The impact of shunts on the photocurrent generation capability of individual cells has been assessed by li-LBIC technique. Results show that the cross-characterization by different imaging techniques provides additional information, which aids in identifying the nature and severity of loss channels with more certainty, along with their relative advantages and limitations in particular cases