148,582 research outputs found

    Connecting Software Metrics across Versions to Predict Defects

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    Accurate software defect prediction could help software practitioners allocate test resources to defect-prone modules effectively and efficiently. In the last decades, much effort has been devoted to build accurate defect prediction models, including developing quality defect predictors and modeling techniques. However, current widely used defect predictors such as code metrics and process metrics could not well describe how software modules change over the project evolution, which we believe is important for defect prediction. In order to deal with this problem, in this paper, we propose to use the Historical Version Sequence of Metrics (HVSM) in continuous software versions as defect predictors. Furthermore, we leverage Recurrent Neural Network (RNN), a popular modeling technique, to take HVSM as the input to build software prediction models. The experimental results show that, in most cases, the proposed HVSM-based RNN model has a significantly better effort-aware ranking effectiveness than the commonly used baseline models

    Three-dimensional active defect loops

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    We describe the flows and morphological dynamics of topological defect lines and loops in three-dimensional active nematics and show, using theory and numerical modeling, that they are governed by the local profile of the orientational order surrounding the defects. Analyzing a continuous span of defect loop profiles, ranging from radial and tangential twist to wedge ± 1 / 2 profiles, we show that the distinct geometries can drive material flow perpendicular or along the local defect loop segment, whose variation around a closed loop can lead to net loop motion, elongation, or compression of shape, or buckling of the loops. We demonstrate a correlation between local curvature and the local orientational profile of the defect loop, indicating dynamic coupling between geometry and topology. To address the general formation of defect loops in three dimensions, we show their creation via bend instability from different initial elastic distortions

    Structure and spectroscopy of surface defects from scanning force spectroscopy: theoetical predictions

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    A possibility to study surface defects by combining noncontact scanning force microscopy (SFM) imaging with atomically resolved optical spectroscopy is demonstrated by modeling an impurity Cr3+ ion at the MgO(001) surface with a SFM tip. Using a combination of the atomistic simulation and the ab initio electronic structure calculations, we predict a topographic noncontact SFM image of the defect and show that its optical transitions can be either enhanced or suppressed depending on the tip atomistic structure and its position relative to the defect. These effects should allow identification of certain impurity species through competition between radiative and nonradiative transitions

    Fundamentals of interface phenomena in advanced bulk nanoscale materials

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    The review is devoted to a study of interface phenomena influencing advanced properties of nanoscale materials processed by means of severe plastic deformation, high-energy ball milling and their combinations. Interface phenomena include processes of interface defect structure relaxation from a highly nonequilibrium state to an equilibrium condition, grain boundary phase transformations and enhanced grain boundary and triple junction diffusivity. On the basis of an experimental investigation, a theoretical description of the key interfacial phenomena controlling the functional properties of advanced bulk nanoscale materials has been conducted. An interface defect structure investigation has been performed by TEM, high-resolution x-ray diffraction, atomic simulation and modeling. The problem of a transition from highly non-equilibrium state to an equilibrium one, which seems to be responsible for low thermostability of nanoscale materials, was studied. Also enhanced grain boundary diffusivity is addressed. Structure recovery and dislocation emission from grain boundaries in nanocrystalline materials have been investigated by analytical methods and modeling

    Electrical activity of carbon-hydrogen centers in Si

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    The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center

    A double junction model of irradiated silicon pixel sensors for LHC

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    In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.Comment: Talk presented at the 10th European Symposium on Semiconductor Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figure