Energy Efficient Design for Deep Sub-micron CMOS VLSIs

Over the past decade, low power, energy efficient VLSI design has been the focal point of active research and development. The rapid technology scaling, the growing integration capacity, and the mounting active and leakage power dissipation are contributing to the growing complexity of modern VLSI design. Careful power planning on all design levels is required. This dissertation tackles the low-power, low-energy challenges in deep sub-micron technologies on the architecture and circuit levels. Voltage scaling is one of the most efficient ways for reducing power and energy. For ultra-low voltage operation, a new circuit technique which allows bulk CMOS circuits to work in the sub-0. 5V supply territory is presented. The threshold voltage of the slow PMOS transistor is controlled dynamically to get a lower threshold voltage during the active mode. Due to the reduced threshold voltage, switching speed becomes faster while active leakage current is increased. A technique to dynamically manage active leakage current is presented. Energy reduction resulting from using the proposed structure is demonstrated through simulations of different circuits with different levels of complexity. As technology scales, the mounting leakage current and degraded noise immunity impact performance especially that of high performance dynamic circuits. Dual threshold technology shows a good potential for leakage reduction while meeting performance goals. A model for optimally selecting threshold voltages and transistor sizes in wide fan-in dynamic circuits is presented. On the circuit level, a novel circuit level technique which handles the trade-off between noise immunity and energy dissipation for wide fan-in dynamic circuits is presented. Energy efficiency of the proposed wide fan-in dynamic circuit is further enhanced through efficient low voltage operation. Another direct consequence of technology scaling is the growing impact of interconnect parasitics and process variations on performance. Traditionally, worst case process, parasitics, and environmental conditions are considered. Designing for worst case guarantees a fail-safe operation but requires a large delay and voltage margins. This large margin can be recovered if the design can adapt to the actual silicon conditions. Dynamic voltage scaling is considered a key enabler in reducing such margin. An on-chip process identifier to recover the margin required due to process variations is described. The proposed architecture adjusts supply voltage using a hybrid between the one-time voltage setting and the continuous monitoring modes of operation. The interconnect impact on delay is minimized through a novel adaptive voltage scaling architecture. The proposed system recovers the large delay and voltage margins required by conventional systems by closely tracking the actual critical path at anytime. By tracking the actual critical path, the proposed system is robust and more energy efficient compared to both the conventional open-loop and closed-loop systems

Modeling and Design Techniques for 3-D ICs under Process, Voltage, and Temperature Variations

Three-dimensional (3-D) integration is a promising solution to further enhance the density and performance of modern integrated circuits (ICs). In 3-D ICs, multiple dies (tiers or planes) are vertically stacked. These dies can be designed and fabricated separately. In addition, these dies can be fabricated in different technologies. The effect of different sources of variations on 3-D circuits, consequently, differ from 2-D ICs. As technology scales, these variations significantly affect the performance of circuits. Therefore, it is increasingly important to accurately and efficiently model different sources of variations in 3-D ICs. The process, voltage, and temperature variations in 3-D ICs are investigated in this dissertation. Related modeling and design techniques are proposed to design a robust 3-D IC. Process variations in 3-D ICs are first analyzed. The effect of process variations on synchronization and 3-D clock distribution networks, is carefully studied. A novel statistical model is proposed to describe the timing variation in 3-D clock distribution networks caused by process variations. Based on this model, different topologies of 3-D clock distribution networks are compared in terms of skew variation. A set of guidelines is proposed to design 3-D clock distribution networks with low clock uncertainty. Voltage variations are described by power supply noise. Power supply noise in 3-D ICs is investigated considering different characteristics of potential 3-D power grids in this thesis. A new algorithm is developed to fast analyze the steady-state IR-drop in 3-D power grids. The first droop of power supply noise, also called resonant supply noise, is usually the deepest voltage drop in power distribution networks. The effect of resonant supply noise on 3-D clock distribution networks is investigated. The combined effect of process variations and power supply noise is modeled by skitter consisting of both skew and jitter. A novel statistical model of skitter is proposed. Based on this proposed model and simulation results, a set of guidelines has been proposed to mitigate the negative effect of process and voltage variations on 3-D clock distribution networks. Thermal issues in 3-D ICs are considered by carefully modeling thermal through silicon vias (TTSVs) in this dissertation. TTSVs are vertical vias which do not carry signals, dedicated to facilitate the propagation of heat to reduce the temperature of 3-D ICs. Two analytic models are proposed to describe the heat transfer in 3-D circuits related to TTSVs herein, providing proper closed-form expressions for the thermal resistance of the TTSVs. The effect of different physical and geometric parameters of TTSVs on the temperature of 3-D ICs is analyzed. The proposed models can be used to fast and accurately estimate the temperature to avoid the overuse of TTSVs occupying a large portion of area. A set of models and design techniques is proposed in this dissertation to describe and mitigate the deleterious effects of process, voltage, and temperature variations in 3-D ICs. Due to the continuous shrink in the feature size of transistors, the large number of devices within one circuit, and the high operating frequency, the effect of these variations on the performance of 3-D ICs becomes increasingly significant. Accurately and efficiently estimating and controlling these variations are, consequently, critical tasks for the design of 3-D ICs

CDM Robust & Low Noise ESD protection circuits

In spite of significant progress during last couple of decades, ESD still affects production yields, manufacturing costs, product quality, product reliability and profitability. The objective of an ESD protection circuit is to create a harmless shunting path for the static electricity before it damages the sensitive electronic circuits. As the devices are scaling down, while ESD energy remains the same, VLSIs are becoming more vulnerable to ESD stress. This higher susceptibility to ESD damage is due to thinner gate oxides and shallower junctions. Furthermore, higher operating frequency of the scaled technologies enforces lower parasitic capacitance of the ESD protection circuits. Hence, increasing the robustness of the ESD protection circuits with minimum additional parasitic capacitance is the main challenge in state of the art CMOS processes. Furthermore with scaling, the integration of analog blocks such as ADC, PLL’s, DLL’s, oscillator etc. on digital chips has provided cheap system on chip (SOC) solutions. However, when analog and digital chip are combined into single mixed-signal chip, on-chip noise coupling from the digital to the analog circuitry through ESD protection circuits becomes a big concern. Thus, increasing supply noise isolation while ensuring the ESD protection robustness is also a big challenge. In this thesis, several ESD protection circuits and devices have been proposed to address the critical issues like increased leakage current, slower turn-on time of devices, increased susceptibility to power supply isolation etc. The proposed ESD protection circuits/devices have been classified into two categories: Pad based ESD protection in which the ESD protection circuits are placed in the I/O pads, and Rail based ESD in which ESD protection circuit is placed between power supplies. In our research, both these aspects have been investigated. The Silicon Controlled Rectifier (SCR) based devices have been used for Pad ESD protection as they have highest ESD protection level per unit area. Two novel devices Darlington based SCR (DSCR) and NMOS Darlington based SCR (NMOS-DSCR) having faster turn-on time, lower first breakdown voltage and low capacitance have been proposed. The transient clamps have been investigated and optimized for Rail based ESD protection. In this research, we have addressed the issue of leakage current in transient clamps. A methodology has been purposed to reduce the leakage current by more than 200,000 times without having major impact on the ESD performance. Also, the issue of noise coupling from digital supply to analog supply through the ESD protection circuits has been addressed. A new transient clamp has been proposed to increase the power supply noise isolation. Finally, a new methodology of placement of analog circuit with respect to transient clamp has been proposed to further increase the power supply noise isolation

Sincronização em sistemas integrados a alta velocidade

Doutoramento em Engenharia ElectrotécnicaA distribui ção de um sinal relógio, com elevada precisão espacial (baixo skew) e temporal (baixo jitter ), em sistemas sí ncronos de alta velocidade tem-se revelado uma tarefa cada vez mais demorada e complexa devido ao escalonamento da tecnologia. Com a diminuição das dimensões dos dispositivos e a integração crescente de mais funcionalidades nos Circuitos Integrados (CIs), a precisão associada as transições do sinal de relógio tem sido cada vez mais afectada por varia ções de processo, tensão e temperatura. Esta tese aborda o problema da incerteza de rel ogio em CIs de alta velocidade, com o objetivo de determinar os limites do paradigma de desenho sí ncrono. Na prossecu ção deste objectivo principal, esta tese propõe quatro novos modelos de incerteza com âmbitos de aplicação diferentes. O primeiro modelo permite estimar a incerteza introduzida por um inversor est atico CMOS, com base em parâmetros simples e su cientemente gen éricos para que possa ser usado na previsão das limitações temporais de circuitos mais complexos, mesmo na fase inicial do projeto. O segundo modelo, permite estimar a incerteza em repetidores com liga ções RC e assim otimizar o dimensionamento da rede de distribui ção de relógio, com baixo esfor ço computacional. O terceiro modelo permite estimar a acumula ção de incerteza em cascatas de repetidores. Uma vez que este modelo tem em considera ção a correla ção entre fontes de ruí do, e especialmente util para promover t ecnicas de distribui ção de rel ogio e de alimentação que possam minimizar a acumulação de incerteza. O quarto modelo permite estimar a incerteza temporal em sistemas com m ultiplos dom ínios de sincronismo. Este modelo pode ser facilmente incorporado numa ferramenta autom atica para determinar a melhor topologia para uma determinada aplicação ou para avaliar a tolerância do sistema ao ru ído de alimentação. Finalmente, usando os modelos propostos, são discutidas as tendências da precisão de rel ogio. Conclui-se que os limites da precisão do rel ogio são, em ultima an alise, impostos por fontes de varia ção dinâmica que se preveem crescentes na actual l ogica de escalonamento dos dispositivos. Assim sendo, esta tese defende a procura de solu ções em outros ní veis de abstração, que não apenas o ní vel f sico, que possam contribuir para o aumento de desempenho dos CIs e que tenham um menor impacto nos pressupostos do paradigma de desenho sí ncrono.Distributing a the clock simultaneously everywhere (low skew) and periodically everywhere (low jitter) in high-performance Integrated Circuits (ICs) has become an increasingly di cult and time-consuming task, due to technology scaling. As transistor dimensions shrink and more functionality is packed into an IC, clock precision becomes increasingly a ected by Process, Voltage and Temperature (PVT) variations. This thesis addresses the problem of clock uncertainty in high-performance ICs, in order to determine the limits of the synchronous design paradigm. In pursuit of this main goal, this thesis proposes four new uncertainty models, with di erent underlying principles and scopes. The rst model targets uncertainty in static CMOS inverters. The main advantage of this model is that it depends only on parameters that can easily be obtained. Thus, it can provide information on upcoming constraints very early in the design stage. The second model addresses uncertainty in repeaters with RC interconnects, allowing the designer to optimise the repeater's size and spacing, for a given uncertainty budget, with low computational e ort. The third model, can be used to predict jitter accumulation in cascaded repeaters, like clock trees or delay lines. Because it takes into consideration correlations among variability sources, it can also be useful to promote oorplan-based power and clock distribution design in order to minimise jitter accumulation. A fourth model is proposed to analyse uncertainty in systems with multiple synchronous domains. It can be easily incorporated in an automatic tool to determine the best topology for a given application or to evaluate the system's tolerance to power-supply noise. Finally, using the proposed models, this thesis discusses clock precision trends. Results show that limits in clock precision are ultimately imposed by dynamic uncertainty, which is expected to continue increasing with technology scaling. Therefore, it advocates the search for solutions at other abstraction levels, and not only at the physical level, that may increase system performance with a smaller impact on the assumptions behind the synchronous design paradigm

Voltage sensing based built-in current sensor for IDDQ test

Quiescent current leakage test of the VDD supply (IDDQ Test) has been proven an effective way to screen out defective chips in manufacturing of Integrated Circuits (IC). As technology advances, the traditional IDDQ test is facing more and more challenges. In this research, a practical built-in current sensor (BICS) is proposed and the design is verified by three generations of test chips. The BICS detects the signal by sensing the voltage drop on supply lines of the circuit under test (CUT). Then the sensor performs analog-to-digital conversion of the input signal using a stochastic process with scan chain readout. Self-calibration and digital chopping are used to minimize offset and low frequency noise and drift. This non-invasive procedure avoids any performance degradation of the CUT. The measurement results of test chips are presented. The sensor achieves a high IDDQ resolution with small chip area overhead. This will enable IDDQ of future technology generations

The effects of process variations on performance and robustness of bulk CMOS and SOI implementations of C-elements

Advances in semiconductor technology have been driven by the continuous demands of market forces for IC products with higher performance and greater functionality per unit area. To date industry has addressed these demands, principally, by scaling down device dimensions. However, several unintended consequences have undermined the benefits obtained from the advances in technology, firstly, the growing impact of process variations on interconnectivity delay, aggravated by the increase in the amount of interconnectivity as circuit complexity increases. Overall, the difficulty of establishing delay parameters in a circuit is adversely impacting on the attainment of the timing closure for a design. Secondly, the increase in the susceptibility of the circuits , even at ground level, to the effects of soft errors due to the reduction in supply voltages and nodal capacitances, together with the increase in the number of nodes in a circuit as the functionality per unit area increases. The aim of this research has been to model and analyse the reliability of logic circuits with regard to the impact of process variations and soft errors, and to finds ways to minimise these effects using different process technologies such as fully depleted silicon on insulator (FDSOI) and partially depleted silicon on insulator (PDSOI) technologies, together with the implementation of different circuit architectures. In view of the increased susceptibility of logic elements to the effects of process variations and soft errors as device geometries are reduced, a logic element which is not only widely used but also typical to asynchronous design is the Muller C-element, which can be realised in a number of different circuit configurations. The robustness of various C-element configurations implemented in different technologies with regard to the effects of process variations and soft errors was examined using the design of the experiment (DoE) and response surface (RSM) techniques. It was found that the circuits based on SOI technology were more robust compared with bulk silicon technology. On the other hand, from the circuit architecture perspective, the differential logic implementations of C-element were found to be more resilient to the effects of process variation and soft errors in comparison with the other C-element implementations investigated.EThOS - Electronic Theses Online ServiceMutah UniversityGBUnited Kingdo

The effects of process variations on performance and robustness of bulk CMOS and SOI implementations of C-elements

Advances in semiconductor technology have been driven by the continuous demands of market forces for IC products with higher performance and greater functionality per unit area. To date industry has addressed these demands, principally, by scaling down device dimensions. However, several unintended consequences have undermined the benefits obtained from the advances in technology, firstly, the growing impact of process variations on interconnectivity delay, aggravated by the increase in the amount of interconnectivity as circuit complexity increases. Overall, the difficulty of establishing delay parameters in a circuit is adversely impacting on the attainment of the timing closure for a design. Secondly, the increase in the susceptibility of the circuits , even at ground level, to the effects of soft errors due to the reduction in supply voltages and nodal capacitances, together with the increase in the number of nodes in a circuit as the functionality per unit area increases. The aim of this research has been to model and analyse the reliability of logic circuits with regard to the impact of process variations and soft errors, and to finds ways to minimise these effects using different process technologies such as fully depleted silicon on insulator (FDSOI) and partially depleted silicon on insulator (PDSOI) technologies, together with the implementation of different circuit architectures. In view of the increased susceptibility of logic elements to the effects of process variations and soft errors as device geometries are reduced, a logic element which is not only widely used but also typical to asynchronous design is the Muller C-element, which can be realised in a number of different circuit configurations. The robustness of various C-element configurations implemented in different technologies with regard to the effects of process variations and soft errors was examined using the design of the experiment (DoE) and response surface (RSM) techniques. It was found that the circuits based on SOI technology were more robust compared with bulk silicon technology. On the other hand, from the circuit architecture perspective, the differential logic implementations of C-element were found to be more resilient to the effects of process variation and soft errors in comparison with the other C-element implementations investigated.EThOS - Electronic Theses Online ServiceMutah UniversityGBUnited Kingdo