A Statistical STT-RAM Design View and Robust Designs at Scaled Technologies

Rapidly increased demands for memory in electronic industry and the significant technical scaling challenges of all conventional memory technologies motivated the researches on the next generation memory technology. As one promising candidate, spin-transfer torque random access memory (STT-RAM) features fast access time, high density, non-volatility, and good CMOS process compatibility. In recent years, many researches have been conducted to improve the storage density and enhance the scalability of STT-RAM, such as reducing the write current and switching time of magnetic tunneling junction (MTJ) devices. In parallel with these efforts, the continuous increasing of tunnel magneto-resistance(TMR) ratio of the MTJ inspires the development of multi-level cell (MLC) STT-RAM, which allows multiple data bits be stored in a single memory cell. Two types of MLC STT-RAM cells, namely, parallel MLC and series MLC, were also proposed. However, like all other nanoscale devices, the performance and reliability of STT-RAM cells are severely affected by process variations, intrinsic device operating uncertainties and environmental fluctuations. The storage margin of a MLC STT-RAM cell, i.e., the distinction between the lowest and highest resistance states, is partitioned into multiple segments for multi-level data representation. As a result, the performance and reliability of MLC STT-RAM cells become more sensitive to the MOS and MTJ device variations and the thermal-induced randomness of MTJ switching. In this work, we systematically analyze the impacts of CMOS and MTJ process variations, MTJ resistance switching randomness that induced by intrinsic thermal fluctuations, and working temperature changes on STT-RAM cell designs. The STT-RAM cell reliability issues in both read and write operations are first investigated. A combined circuit and magnetic simulation platform is then established to quantitatively study the persistent and non-persistent errors in STT-RAM cell operations. Then, we analyzed the extension of STT-RAM cell behaviors from SLC (single-level- cell) to MLC (multi-level- cell). On top of that, we also discuss the optimal device parameters of the MLC MTJ for the minimization of the operation error rate of the MLC STT-RAM cells from statistical design perspective. Our simulation results show that under the current available technology, series MLC STT-RAM demonstrates overwhelming benefits in the read and write reliability compared to parallel MLC STT-RAM and could potentially satisfy the requirement of commercial practices. Finally, with the detail analysis study of STT-RAM cells, we proposed several error reduction design, such as ADAMS structure, and FA-STT structure

Design techniques for dense embedded memory in advanced CMOS technologies

University of Minnesota Ph.D. dissertation. February 2012. Major: Electrical Engineering. Advisor: Chris H. Kim. 1 computer file (PDF); viii, 116 pages.On-die cache memory is a key component in advanced processors since it can boost micro-architectural level performance at a moderate power penalty. Demand for denser memories only going to increase as the number of cores in a microprocessor goes up with technology scaling. A commensurate increase in the amount of cache memory is needed to fully utilize the larger and more powerful processing units. 6T SRAMs have been the embedded memory of choice for modern microprocessors due to their logic compatibility, high speed, and refresh-free operation. However, the relatively large cell size and conflicting requirements for read and write make aggressive scaling of 6T SRAMs challenging in sub-22 nm. In this dissertation, circuit techniques and simulation methodologies are presented to demonstrate the potential of alternative options such as gain cell eDRAMs and spin-torque-transfer magnetic RAMs (STT-MRAMs) for high density embedded memories.Three unique test chip designs are presented to enhance the retention time and access speed of gain cell eDRAMs. Proposed bit-cells utilize preferential boostings, beneficial couplings, and aggregated cell leakages for expanding signal window between data `1' and `0'. The design space of power-delay product can be further enhanced with various assist schemes that harness the innate properties of gain cell eDRAMs. Experimental results from the test chips demonstrate that the proposed gain cell eDRAMs achieve overall faster system performances and lower static power dissipations than SRAMs in a generic 65 nm low-power (LP) CMOS process. A magnetic tunnel junction (MTJ) scaling scenario and an efficient HSPICE simulation methodology are proposed for exploring the scalability of STT-MRAMs under variation effects from 65 nm to 8 nm. A constant JC0*RA/VDD scaling method is adopted to achieve optimal read and write performances of STT-MRAMs and thermal stabilities for a 10 year retention are achieved by adjusting free layer thicknesses as well as projecting crystalline anisotropy improvements. Studies based on the proposed methodology show that in-plane STT-MRAM will outperform SRAM from 15 nm node, while its perpendicular counterpart requires further innovations in MTJ material properties in order to overcome the poor write performance from 22 nm node

High-Performance and Low-Power Magnetic Material Memory Based Cache Design

Magnetic memory technologies are very promising candidates to be universal memory due to its good scalability, zero standby power and radiation hardness. Having a cell area much smaller than SRAM, magnetic memory can be used to construct much larger cache with the same die footprint, leading to siginficant improvement of overall system performance and power consumption especially in this multi-core era. However, magnetic memories have their own drawbacks such as slow write, read disturbance and scaling limitation, making its usage as caches challenging. This dissertation comprehensively studied these two most popular magnetic memory technologies. Design exploration and optimization for the cache design from different design layers including the memory devices, peripheral circuit, memory array structure and micro-architecture are presented. By leveraging device features, two major micro-architectures -multi-retention cache hierarchy and process-variation-aware cache are presented to improve the write performance of STT-RAM. The enhancement in write performance results in the degradation of read operations, in terms of both speed and data reliability. This dissertation also presents an architecture to resolve STT-RAM read disturbance issue. Furthermore, the scaling of STT-RAM is hindered due to the required size of switching transistor. To break the cell area limitation of STT-RAM, racetrack memory is studied to achieve an even higher memory density and better performance and lower energy consumption. With dedicated elaboration, racetrack memory based cache design can achieve a siginificant area reduction and energy saving when compared to optimized STT-RAM

Oscillation-based test applied to a wideband CCII

Oscillation-based testing (OBT) has been proven to be a simple, yet effective VLSI test for numerous circuit types. This paper investigates, for the first time, the application of OBT verification for second generation current conveyors (CCIIs). The OBT is formed by connecting the CCII into a simple Wien bridge oscillator and monitoring both the amplitude and frequency of oscillation. The fault detection rate, taking into account both the open and short circuit fault simulation analyses, indicates 96.34% fault coverage using a combination of amplitude and frequency output sensing in all technology corners. The only nondetected faults are short circuits between and , which can be detected using other techniques such as IDDQ testing. This method is found to be sensitive to resistor and capacitor process variation in the Wien bridge oscillator, but mitigating test steps are proposed.The Argentina-South Africa Research Cooperation Programme, as administered by the Ministry of Science, Technology and Productive Innovation in Argentina and the National Research Foundation in South Africa.https://www.hindawi.com/journals/vlsiElectrical, Electronic and Computer Engineerin

Adaptive Intelligent Systems for Extreme Environments

As embedded processors become powerful, a growing number of embedded systems equipped with artificial intelligence (AI) algorithms have been used in radiation environments to perform routine tasks to reduce radiation risk for human workers. On the one hand, because of the low price, commercial-off-the-shelf devices and components are becoming increasingly popular to make such tasks more affordable. Meanwhile, it also presents new challenges to improve radiation tolerance, the capability to conduct multiple AI tasks and deliver the power efficiency of the embedded systems in harsh environments. There are three aspects of research work that have been completed in this thesis: 1) a fast simulation method for analysis of single event effect (SEE) in integrated circuits, 2) a self-refresh scheme to detect and correct bit-flips in random access memory (RAM), and 3) a hardware AI system with dynamic hardware accelerators and AI models for increasing flexibility and efficiency. The variances of the physical parameters in practical implementation, such as the nature of the particle, linear energy transfer and circuit characteristics, may have a large impact on the final simulation accuracy, which will significantly increase the complexity and cost in the workflow of the transistor level simulation for large-scale circuits. It makes it difficult to conduct SEE simulations for large-scale circuits. Therefore, in the first research work, a new SEE simulation scheme is proposed, to offer a fast and cost-efficient method to evaluate and compare the performance of large-scale circuits which subject to the effects of radiation particles. The advantages of transistor and hardware description language (HDL) simulations are combined here to produce accurate SEE digital error models for rapid error analysis in large-scale circuits. Under the proposed scheme, time-consuming back-end steps are skipped. The SEE analysis for large-scale circuits can be completed in just few hours. In high-radiation environments, bit-flips in RAMs can not only occur but may also be accumulated. However, the typical error mitigation methods can not handle high error rates with low hardware costs. In the second work, an adaptive scheme combined with correcting codes and refreshing techniques is proposed, to correct errors and mitigate error accumulation in extreme radiation environments. This scheme is proposed to continuously refresh the data in RAMs so that errors can not be accumulated. Furthermore, because the proposed design can share the same ports with the user module without changing the timing sequence, it thus can be easily applied to the system where the hardware modules are designed with fixed reading and writing latency. It is a challenge to implement intelligent systems with constrained hardware resources. In the third work, an adaptive hardware resource management system for multiple AI tasks in harsh environments was designed. Inspired by the “refreshing” concept in the second work, we utilise a key feature of FPGAs, partial reconfiguration, to improve the reliability and efficiency of the AI system. More importantly, this feature provides the capability to manage the hardware resources for deep learning acceleration. In the proposed design, the on-chip hardware resources are dynamically managed to improve the flexibility, performance and power efficiency of deep learning inference systems. The deep learning units provided by Xilinx are used to perform multiple AI tasks simultaneously, and the experiments show significant improvements in power efficiency for a wide range of scenarios with different workloads. To further improve the performance of the system, the concept of reconfiguration was further extended. As a result, an adaptive DL software framework was designed. This framework can provide a significant level of adaptability support for various deep learning algorithms on an FPGA-based edge computing platform. To meet the specific accuracy and latency requirements derived from the running applications and operating environments, the platform may dynamically update hardware and software (e.g., processing pipelines) to achieve better cost, power, and processing efficiency compared to the static system

Leveraging the Intrinsic Switching Behaviors of Spintronic Devices for Digital and Neuromorphic Circuits

With semiconductor technology scaling approaching atomic limits, novel approaches utilizing new memory and computation elements are sought in order to realize increased density, enhanced functionality, and new computational paradigms. Spintronic devices offer intriguing avenues to improve digital circuits by leveraging non-volatility to reduce static power dissipation and vertical integration for increased density. Novel hybrid spintronic-CMOS digital circuits are developed herein that illustrate enhanced functionality at reduced static power consumption and area cost. The developed spin-CMOS D Flip-Flop offers improved power-gating strategies by achieving instant store/restore capabilities while using 10 fewer transistors than typical CMOS-only implementations. The spin-CMOS Muller C-Element developed herein improves asynchronous pipelines by reducing the area overhead while adding enhanced functionality such as instant data store/restore and delay-element-free bundled data asynchronous pipelines. Spintronic devices also provide improved scaling for neuromorphic circuits by enabling compact and low power neuron and non-volatile synapse implementations while enabling new neuromorphic paradigms leveraging the stochastic behavior of spintronic devices to realize stochastic spiking neurons, which are more akin to biological neurons and commensurate with theories from computational neuroscience and probabilistic learning rules. Spintronic-based Probabilistic Activation Function circuits are utilized herein to provide a compact and low-power neuron for Binarized Neural Networks. Two implementations of stochastic spiking neurons with alternative speed, power, and area benefits are realized. Finally, a comprehensive neuromorphic architecture comprising stochastic spiking neurons, low-precision synapses with Probabilistic Hebbian Plasticity, and a novel non-volatile homeostasis mechanism is realized for subthreshold ultra-low-power unsupervised learning with robustness to process variations. Along with several case studies, implications for future spintronic digital and neuromorphic circuits are presented