462 research outputs found

    TSV Equivalent Circuit Model using 3D Full-Wave Analysis

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    This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TSVs). Three dimensional full-wave simulations are performed to extract equivalent circuit models. The effects of parametric and catastrophic faults due to pin-holes, voids and open circuits on the equivalent circuit models have been determined through 3D simulations. The extracted TSV models are then used to conduct delay tests to determine the required measurement resolution to detect TSV defects. It is shown that the substrate conductivity has a considerable effect on TSV fault characterization. It is also shown that, regardless of the substrate type, even a relatively large void does not alter the TSV resistance or its parasitic capacitance noticeably at 1GHz solution frequency. An on-chip test solution for TSV parametric faults requires a dedicated high resolution measurement circuit due to the minor variations of TSV circuit model parameters

    Contactless Test Access Mechanism for 3D IC

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    3D IC integration presents many advantages over the current 2D IC integration. It has the potential to reduce the power consumption and the physical size while supporting higher bandwidth and processing speed. Through Silicon Via’s (TSVs) are vertical interconnects between different layers of 3D ICs with a typical 5μm diameter and 50μm length. To test a 3D IC, an access mechanism is needed to apply test vectors to TSVs and observe their responses. However, TSVs are too small for access by current wafer probes and direct TSV probing may affect their physical integrity. In addition, the probe needles for direct TSV probing must be cleaned or replaced frequently. Contactless probing method resolves most of the TSV probing problems and can be employed for small-pitch TSVs. In this dissertation, contactless test access mechanisms for 3D IC have been explored using capacitive and inductive coupling techniques. Circuit models for capacitive and inductive communication links are extracted using 3D full-wave simulations and then circuit level simulations are carried out using Advanced Design System (ADS) design environment to verify the results. The effects of cross-talk and misalignment on the communication link have been investigated. A contactless TSV probing method using capacitive coupling is proposed and simulated. A prototype was fabricated using TSMC 65nm CMOS technology to verify the proposed method. The measurement results on the fabricated prototype show that this TSV probing scheme presents -55dB insertion loss at 1GHz frequency and maintains higher than 35dB signal-to-noise ratio within 5µm distance. A microscale contactless probe based on the principle of resonant inductive coupling has also been designed and simulated. Experimental measurements on a prototype fabricated in TSMC 65nm CMOS technology indicate that the data signal on the TSV can be reconstructed when the distance between the TSV and the probe remains less than 15µm

    Electronic identification systems for asset management

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    Electronic identification is an increasingly pervasive technology that permits rapid data recovery from low-power transponders whenever they are placed within the vicinity of an interrogator device. Fundamental benefits include proximity detection not requiring line-of-sight, multiple transponder access and data security. In this document, electronic identification methods for asset management are devised for the new target application of electrical appliance testing. In this application mains-powered apparatus are periodically subjected a prescribed series of electrical tests performed by a Portable Appliance Tester (PAT). The intention is to enhance the process of appliance identification and management, and to automate the test process as far as possible. Three principal methods of electronic identification were designed and analysed for this application: proximity Radio Frequency Identification (RFID), cable RFID and power- line signalling. Each method relies on an inductively coupled mechanism that utilities a signalling technique called direct-load modulation. This is particularly suited to low- cost passive transponder designs. Physical limitations to proximity RFID are identified including coil size, orientation and susceptibility to nearby conducting surfaces. A novel inductive signalling method called cable RFID is then described that permits automatic appliance identification. This method uses the appliance power cable and inlet filter to establish a communication channel between interrogator and transponder. Prior to commencing the test phase, an appliance is plugged into the PAT and identified automatically via cable RFID. An attempt is made to extend the scope of cable RFID by developing a novel mains power-line signalling method that uses direct-load modulation and passive transponders. Finally, two different implementations of RFID interrogator are described. The first takes the form of an embeddable module intended for incorporation into electronic identification products such as RFID enabled PAT units. Software Defined Radio (SDR) principles are applied to the second interrogator design in an effort to render the device reconfigurable

    A Unified Submodular Framework for Multimodal IC Trojan Detection

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    Abstract. This paper presents a unified formal framework for inte-grated circuits (IC) Trojan detection that can simultaneously employ multiple noninvasive measurement types. Hardware Trojans refer to modifications, alterations, or insertions to the original IC for adversarial purposes. The new framework formally defines the IC Trojan detection for each measurement type as an optimization problem and discusses the complexity. A formulation of the problem that is applicable to a large class of Trojan detection problems and is submodular is devised. Based on the objective function properties, an efficient Trojan detection method with strong approximation and optimality guarantees is intro-duced. Signal processing methods for calibrating the impact of inter-chip and intra-chip correlations are presented. We propose a number of meth-ods for combining the detections of the different measurement types. Experimental evaluations on benchmark designs reveal the low-overhead and effectiveness of the new Trojan detection framework and provides a comparison of different detection combining methods.

    Single-Chip Isolated DC-DC Converter with Self-Tuned Maximum Power Transfer Frequency

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    abstract: There is an increasing demand for fully integrated point-of-load (POL) isolated DC-DC converters that can provide an isolation barrier between the primary and the secondary side, while delivering a low ripple, low noise regulated voltage at their isolated sides to a high dynamic range, sensitive mixed signal devices, such as sensors, current-shunt-monitors and ADCs. For these applications, smaller system size and integration level is important because the whole system may need to fit to limited space. Traditional methods for providing isolated power are discrete solutions using bulky transformers. Miniaturization of isolated POL regulators is becoming highly desirable for low power applications. A fully integrated, low noise isolated point-of-load DC-DC converter for supply regulation of high dynamic range analog and mixed signal sensor signal-chains is presented. The isolated DC-DC converter utilizes an integrated planar air-core micro-transformer as a coupled resonator and isolation barrier and enables direct connection of low-voltage mixed signal circuits to higher supply rails. The air core transformer is driven at its primary resonant frequency of 100 MHz to achieve maximum power transfer. A mixed-signal perturb-and-observe based frequency search algorithm is developed to improve maximum power transfer efficiency by 60% across the isolation barrier compared to fixed driving frequency method. The isolated converter’s output ripple is reduced by utilizing spread spectrum clocking in the driver. An isolated PMOS LDO in the secondary side is used to suppress switching noise and ripple by 21dB. Conducted and radiated EMI distribution on the IC is measured by a set of integrated ring oscillator based noise sensors with -68dBm noise sensitivity. The proposed isolated converter achieves highest level of integration with respect to earlier reported integrated isolated converters, while providing 50V on-chip junction isolation without the need for extra silicon post-processing steps.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

    Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process

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    Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits. The primary requirement to ensure rapid switching of power MOSFETs was a gate drive buffer capable of taking a control signal and driving the MOSFET gate with high current required. In this work, the first integrated SiC CMOS gate driver was developed in a 1.2 ÎĽm SiC CMOS process to drive a SiC power MOSFET. The driver was designed for close integration inside a power module and exposure to high temperatures. The drive strength of the gate driver was controllable to allow for managing power MOSFET switching speed and potential drain voltage overshoot. Output transistor layouts were optimized using custom Python software in conjunction with existing design tool resources. A wafer-level test system was developed to identify yield issues in the gate driver output transistors. This method allowed for qualitative and quantitative evaluation of transistor leakage while the system was under probe. Wafer-level testing and results are presented. The gate driver was tested under high temperature operation up to 530 degrees celsius. An integrated module was built and tested to illustrate the capability of the gate driver to control a power MOSFET under load. The adjustable drive strength feature was successfully demonstrated

    Electromagnetic Interference and Compatibility

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    Recent progress in the fields of Electrical and Electronic Engineering has created new application scenarios and new Electromagnetic Compatibility (EMC) challenges, along with novel tools and methodologies to address them. This volume, which collects the contributions published in the “Electromagnetic Interference and Compatibility” Special Issue of MDPI Electronics, provides a vivid picture of current research trends and new developments in the rapidly evolving, broad area of EMC, including contributions on EMC issues in digital communications, power electronics, and analog integrated circuits and sensors, along with signal and power integrity and electromagnetic interference (EMI) suppression properties of materials

    Multiple Output Power Supply using Toroidal Transformers for Medium Voltage Active Gate Drivers

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    When operating in high power applications, power devices dissipate tens or hundreds of watts of power in the form of heat. The ability of the power devices to withstand power and dissipation of heat across the power devices becomes a prominent requirement in designing the power converter. This challenge demands a power converter design to be more effective and consistent which factors in size, cost, weight, power density and reliability. This study aims to propose a gate driver isolated power supply design that can be used in medium voltage applications (e.g., up to 10 kV) while respecting the principle of scalability. A versatile design that facilitates addition of another power switch to the converter if needed, without having to alter too many power supply components while retaining the main structure, thus reducing system complexity and size. The proposed topology is a full-bridge converter with a single-turn primary side transformer, realized using a high voltage insulated hook-up wire as primary winding, while the secondary winding is wound around a toroidal core. This structure can supply several gate drivers simultaneously without replicating the primary side converter, but by simply adding a toroidal core with the secondary side converter which effectively reduces the size of the power supply. To satisfy magnetic and electric constraints, the proposed toroidal transformer needs to exhibit a very low primary to secondary coupling capacitance to avoid high common mode current, which leads to control signal distortion. For this, a multi-objective optimization design has been performed for the magnetic components of the topology. In this paper, a single input and three output power supply design is proposed for a 10 kV active gate driver

    A Unified Framework for Multimodal Submodular Integrated Circuits Trojan Detection

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