Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory

PostprintThis work presents an approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 /spl mu/m CMOS technology corroborate the theoretical development of this work

Strain-Engineered MOSFETs

This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization

Simulation study of scaling design, performance characterization, statistical variability and reliability of decananometer MOSFETs

This thesis describes a comprehensive, simulation based scaling study – including device design, performance characterization, and the impact of statistical variability – on deca-nanometer bulk MOSFETs. After careful calibration of fabrication processes and electrical characteristics for n- and p-MOSFETs with 35 nm physical gate length, 1 nm EOT and stress engineering, the simulated devices closely match the performance of contemporary 45 nm CMOS technologies. Scaling to 25 nm, 18 nm and 13 nm gate length n and p devices follows generalized scaling rules, augmented by physically realistic constraints and the introduction of high-k/metal-gate stacks. The scaled devices attain the performance stipulated by the ITRS. Device a.c. performance is analyzed, at device and circuit level. Extrinsic parasitics become critical to nano-CMOS device performance. The thesis describes device capacitance components, analyzes the CMOS inverter, and obtains new insights into the inverter propagation delay in nano-CMOS. The projection of a.c. performance of scaled devices is obtained. The statistical variability of electrical characteristics, due to intrinsic parameter fluctuation sources, in contemporary and scaled decananometer MOSFETs is systematically investigated for the first time. The statistical variability sources: random discrete dopants, gate line edge roughness and poly-silicon granularity are simulated, in combination, in an ensemble of microscopically different devices. An increasing trend in the standard deviation of the threshold voltage as a function of scaling is observed. The introduction of high-k/metal gates improves electrostatic integrity and slows this trend. Statistical evaluations of variability in Ion and Ioff as a function of scaling are also performed. For the first time, the impact of strain on statistical variability is studied. Gate line edge roughness results in areas of local channel shortening, accompanied by locally increased strain, both effects increasing the local current. Variations are observed in both the drive current, and in the drive current enhancement normally expected from the application of strain. In addition, the effects of shallow trench isolation (STI) on MOSFET performance and on its statistical variability are investigated for the first time. The inverse-narrow-width effect of STI enhances the current density adjacent to it. This leads to a local enhancement of the influence of junction shapes adjacent to the STI. There is also a statistical impact on the threshold voltage due to random STI induced traps at the silicon/oxide interface

Compact Models for Integrated Circuit Design

This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts

Very large time constant Gm-C Filters

In this study a set of tools for the design of fully integrated transconductor-capacitor (Gm-C) filters, with very large time constants and current consumption under one micro-Ampere are presented. The selected application is a 2nd order bandpass-filter-amplifier, with a gain of 400 from 0.5 to 7Hz, carrying out the signal conditioning of a piezoelectric accelerometer which is part of an implantable cardiac pacemaker. The main challenge is to achieve very large time constants, without using any discrete external component. The chosen circuit technique to fulfill the requirement is series-parallel current division applied to standard symmetrical transconductors (OTAs). These circuits have demonstrated to be an excellent solution regarding their occupied area, power consumption, noise, linearity, and particularly offset. OTAs as low as 33pS -equivalent to a 30G resistor-, with up to 1V linear range, and input referred offset of a few mV, were designed, fabricated in a standard 0.8 micron CMOS technology, and tested. The application requires the series-parallel association of a large number of transistors, and the use of bias currents as low as a few pico-Amperes, which is not very common in analog integrated circuits. In this case the designer should employ maximum care in the selection of the transistor models to be used. A central aspect of this thesis was also to evaluate and develop noise and offset estimation models which was not obvious in the very beginning of the research. In the first two chapters an introduction to the target application is presented, and several MOS transistor characteristics in terms of the inversion coefficient -using the ACM transistor model- are evaluated. In chapter 3 it is discussed whether the usual flicker and thermal noise models are consistent regarding series-parallel association, and adequately represent the expected noise behavior under different bias conditions. A consistent, physics-based, one-equation-all-regions model for flicker noise in the MOS transistor is then presented. Several noise measurements are included demonstrating that the new model accurately fits widely different bias situations. A new model for mismatch offset in MOS transistors is presented, as a corollary of the flicker noise analysis. Finally, the correlation between flicker noise and mismatch offset, that can be seen as a DC noise, is shown. In chapter 4, the design of OTAs with an extended linear range, and very low transconductance, using series-parallel current division is presented. Precise tools are introduced for the estimation of noise and mismatch offset in series-parallel current mirrors, that are shown to help in the reduction of inaccuracies in the copy of currents with a large copy factor. The design and measurement of several OTA examples are presented. In chapter 5, the developed tools, and the OTAs shown, are employed in the design of the above mentioned filter for the piezoelectric accelerometer. A general methodology for the design of Gm-C filters with similar characteristics is established. The filter was fabricated and tested, successfully operating with a total power consumption of 233nA, up to a 2V power supply, with an input noise and mismatch offset of 2-4 Vrms, and 18 V respectively. To summarize the main results obtained were: The development of a new flicker noise model, the study of the effect of mismatch regarding series-parallel association, a new design methodology for OTAs and Gm-C filters. It is our hope that this constitutes a helpful set of tools for the circuit designer.En esta tesis se presenta un conjunto de herramientas para el diseño de circuitos integrados que implementan filtros transconductor-capacitor (Gm-C), de muy altas constantes de tiempo, con bajo ruido, y consumo de corriente por debajo del micro-Ampere. Como ejemplo de aplicación se toma un amplificador-pasabanda 2º orden, de ganancia 400 en la banda de 0.5 a 7Hz, que realiza el acondicionamiento de señal de un acelerómetro piezoeléctrico a ser empleado en un marcapasos implantable. El principal desafío es realizar en dicho filtro de tiempo continuo, muy altas constantes de tiempo sin usar componentes externos. La técnica elegida para alcanzar tal objetivo es la división serie-paralelo de corriente en transconductores (OTAs) simétricos estándar. Estos circuitos demostraron ser una excelente solución en cuanto al área ocupada, su consumo, ruido, linealidad, y en particular offset. Se diseñaron, fabricaron, y midieron, OTAs hasta 33pS -equivalente a una resistencia de 30G -, con hasta 1V de rango de lineal, y offset a la entrada de algunos mV, utilizando una tecnología CMOS de 0.8 micras de largo mínimo de canal. La aplicación requiere la asociación serie-paralelo de un gran número de transistores, y polarización con corrientes de hasta pico-Amperes, lo que constituye una situación poco frecuente en circuitos integrados analógicos. En este marco el diseñador debe elegir los modelos de transistor con sumo cuidado. Un aspecto central de esta tesis es también, el estudio y presentación de modelos adecuados de ruido y offset, que no resultan obvios al principio. En los primeros dos capítulos se realiza una introducción y se revisa, utilizando el modelo ACM, diferentes características del transistor MOS en función del nivel de inversión. En el capítulo 3 revisa la pertinencia y consistencia frente a la asociación serie-paralelo, de los modelos usuales de ruido de flicker o 1/f, y térmico. Luego se presenta, incluyendo medidas, un nuevo modelo físico, consistente, simple, y válido en todas las regiones de operación del transistor MOS, para el ruido de flicker. Como corolario a este estudio se presenta un nuevo modelo para estimar el desapareo entre transistores, en función no solo de la geometría, pero también de la polarización. Se demuestra la correlación, debido a su origen físico análogo, entre el ruido de flicker y el offset por desapareo que puede ser visto como un ruido en DC. En el capítulo 4 se presenta el diseño de OTAs con rango de linealidad extendido, y muy baja transconductancia, utilizando división serie-paralelo de corriente. Se presentan herramientas precisas para la estimación de offset y ruido y se demuestra la utilidad de la técnica para reducir el offset en espejos de corriente. Se presenta el diseño y medida de diversos OTAs. En el capítulo 5, las herramientas desarrolladas, y los OTAs presentados, son empleados en el diseño del filtro descripto para un acelerómetro piezoeléctrico. Se establece una metodología general para el diseño de filtros Gm-C con características similares. El filtro se fabricó y midió, operando en forma satisfactoria, con un consumo total de 230nA y hasta los 2V de tensión de alimentación, con ruido y offset a la entrada de tan solo 2-4 Vrms, y 18 V respectivamente. El desarrollo de un nuevo modelo de ruido 1/f para el transistor MOS, el estudio de la influencia del offset frente a la asociación serie-paralelo y su aplicación en OTAs, la metodología de diseño empleada, la demostración del uso de técnicas novedosas en una aplicación como la elegida que tiene relevancia tecnológica e interés académico; esperamos que todo ello constituya una contribución valiosa para la comunidad científica en microelectrónica y un conjunto de herramientas de utilidad para el diseño de circuitos

Statistical modelling of nano CMOS transistors with surface potential compact model PSP

The development of a statistical compact model strategy for nano-scale CMOS transistors is presented in this thesis. Statistical variability which arises from the discreteness of charge and granularity of matter plays an important role in scaling of nano CMOS transistors especially in sub 50nm technology nodes. In order to achieve reasonable performance and yield in contemporary CMOS designs, the statistical variability that affects the circuit/system performance and yield must be accurately represented by the industry standard compact models. As a starting point, predictive 3D simulation of an ensemble of 1000 microscopically different 35nm gate length transistors is carried out to characterize the impact of statistical variability on the device characteristics. PSP, an advanced surface potential compact model that is selected as the next generation industry standard compact model, is targeted in this study. There are two challenges in development of a statistical compact model strategy. The first challenge is related to the selection of a small subset of statistical compact model parameters from the large number of compact model parameters. We propose a strategy to select 7 parameters from PSP to capture the impact of statistical variability on current-voltage characteristics. These 7 parameters are used in statistical parameter extraction with an average RMS error of less than 2.5% crossing the whole operation region of the simulated transistors. Moreover, the accuracy of statistical compact model extraction strategy in reproducing the MOSFET electrical figures of merit is studied in detail. The results of the statistical compact model extraction are used for statistical circuit simulation of a CMOS inverter under different input-output conditions and different number of statistical parameters. The second challenge in the development of statistical compact model strategy is associated with statistical generation of parameters preserving the distribution and correlation of the directly extracted parameters. By using advanced statistical methods such as principal component analysis and nonlinear power method, the accuracy of parameter generation is evaluated and compared to directly extracted parameter sets. Finally, an extension of the PSP statistical compact model strategy to different channel width/length devices is presented. The statistical trends of parameters and figures of merit versus channel width/length are characterized

Simulation of charge-trapping in nano-scale MOSFETs in the presence of random-dopants-induced variability

The growing variability of electrical characteristics is a major issue associated with continuous downscaling of contemporary bulk MOSFETs. In addition, the operating conditions brought about by these same scaling trends have pushed MOSFET degradation mechanisms such as Bias Temperature Instability (BTI) to the forefront as a critical reliability threat. This thesis investigates the impact of this ageing phenomena, in conjunction with device variability, on key MOSFET electrical parameters. A three-dimensional drift-diffusion approximation is adopted as the simulation approach in this work, with random dopant fluctuations—the dominant source of statistical variability—included in the simulations. The testbed device is a realistic 35 nm physical gate length n-channel conventional bulk MOSFET. 1000 microscopically different implementations of the transistor are simulated and subjected to charge-trapping at the oxide interface. The statistical simulations reveal relatively rare but very large threshold voltage shifts, with magnitudes over 3 times than that predicted by the conventional theoretical approach. The physical origin of this effect is investigated in terms of the electrostatic influences of the random dopants and trapped charges on the channel electron concentration. Simulations with progressively increased trapped charge densities—emulating the characteristic condition of BTI degradation—result in further variability of the threshold voltage distribution. Weak correlations of the order of 10-2 are found between the pre-degradation threshold voltage and post-degradation threshold voltage shift distributions. The importance of accounting for random dopant fluctuations in the simulations is emphasised in order to obtain qualitative agreement between simulation results and published experimental measurements. Finally, the information gained from these device-level physical simulations is integrated into statistical compact models, making the information available to circuit designers

Statistical compact model strategies for nano CMOS transistors subject of atomic scale variability

One of the major limiting factors of the CMOS device, circuit and system simulation in sub 100nm regimes is the statistical variability introduced by the discreteness of charge and granularity of matter. The statistical variability cannot be eliminated by tuning the layout or by tightening fabrication process control. Since the compact models are the key bridge between technology and design, it is necessary to transfer reliably the MOSFET statistical variability information into compact models to facilitate variability aware design practice. The aim of this project is the development of a statistical extraction methodology essential to capture statistical variability with optimum set of parameters particularly in industry standard compact model BSIM. This task is accomplished by using a detailed study on the sensitivity analysis of the transistor current in respect to key parameters in compact model in combination with error analysis of the fitted Id-Vg characteristics. The key point in the developed direct statistical compact model strategy is that the impacts of statistical variability can be captured in device characteristics by tuning a limited number of parameters and keeping the values for remaining major set equal to their default values obtained from the “uniform” MOSFET compact model extraction. However, the statistical compact model extraction strategies will accurately represent the distribution and correlation of the electrical MOSFET figures of merit. Statistical compact model parameters are generated using statistical parameter generation techniques such as uncorrelated parameter distributions, principal component analysis and nonlinear power method. The accuracy of these methods is evaluated in comparison with the results obtained from ‘atomistic’ simulations. The impact of the correlations in the compact model parameters has been analyzed along with the corresponding transistor figures of merit. The accuracy of the circuit simulations with different statistical compact model libraries has been studied. Moreover, the impact of the MOSFET width/length on the statistical trend of the optimum set of statistical compact model parameters and electrical figures of merit has been analyzed with two methods to capture geometry dependencies in proposed statistical models

A Process Variation Tolerant Self-Compensation Sense Amplifier Design

As we move under the aegis of the Moore\u27s law, we have to deal with its darker side with problems like leakage and short channel effects. Once we go beyond 45nm regime process variations also have emerged as a significant design concern.Embedded memories uses sense amplifier for fast sensing and typically, sense amplifiers uses pair of matched transistors in a positive feedback environment. A small difference in voltage level of applied input signals to these matched transistors is amplified and the resulting logic signals are latched. Intra die variation causes mismatch between the sense transistors that should ideally be identical structures. Yield loss due to device and process variations has never been so critical to cause failure in circuits. Due to growth in size of embedded SRAMs as well as usage of sense amplifier based signaling techniques, process variations in sense amplifiers leads to significant loss of yield for that we need to come up with process variation tolerant circuit styles and new devices. In this work impact of transistor mismatch due to process variations on sense amplifier is evaluated and this problem is stated. For the solution of the problem a novel self compensation scheme on sense amplifiers is presented on different technology nodes up to 32nm on conventional bulk MOSFET technology. Our results show that the self compensation technique in the conventional bulk MOSFET latch type sense amplifier not just gives improvement in the yield but also leads to improvement in performance for latch type sense amplifiers. Lithography related CD variations, fluctuations in dopant density, oxide thickness and parametric variations of devices are identified as a major challenge to the classical bulk type MOSFET. With the emerging nanoscale devices, SIA roadmap identifies FinFETs as a candidate for post-planar end-of-roadmap CMOS device. With current technology scaling issues and with conventional bulk type MOSFET on 32nm node our technique can easily be applied to Double Gate devices. In this work, we also develop the model of Double Gate MOSFET through 3D Device Simulator Damocles and TCAD simulator. We propose a FinFET based process variation tolerant sense amplifier design that exploits the back gate of FinFET devices for dynamic compensation against process variations. Results from statistical simulation show that the proposed dynamic compensation is highly effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node