High-speed Energy-efficient Soft Error Tolerant Flip-flops

Single event upset (SEU) or soft error caused by alpha particles and cosmic neutrons has emerged as a key reliability concern in nanoscale CMOS technologies. The decrease in signal charge due to the reduction of the operating voltage and node capacitance primarily increases the soft error rate (SER) in integrated circuits. The situation is aggravated by the increasing number of memory elements (e.g., flip-flops) on chip, the lack of inherent error masking mechanisms in these elements, and the below-nominal voltage operation for reducing the power consumption. In fact, limiting the power consumption is critical to enhance the battery life of portable electronic devices. In this thesis, I present several soft error tolerant flip-flops that offer high speed while consuming low power either inherently or through low-energy clocking scheme. The proposed soft error tolerant flip-flops can be divided into two major categories: i) flip-flops with square-wave clock and ii) flip-flops with energy recovery sinusoidal clock, which is very attractive to significantly lower the clock power consumption. The two square-wave clock based proposed flip-flops are: a true single phase clock (TSPC) DICE flip-flop and a clocked precharge soft error robust flip-flop. These flip-flops use fewer transistors and offer as much as 35% lower power-delay-product (PDP) than existing soft error robust pulsed DICE flip-flop. The energy recovery clock based proposed flip-flops are: a soft clock edge SEU hardened (SCESH) flip-flop, C2-DICE flip-flop, a conditional pass Quatro (CPQ) flip-flop, and two energy recovery TSPC flip-flops. These flip-flops exhibit lower PDP ranging from 30% to 69% when compared to the pulsed DICE flip-flop and the single-ended conditional capturing energy recovery (SCCER) flip-flop. Thus, the proposed flip-flops provide a wide range of power and delay choices and as such can be used in a variety of low-power or high performance applications including high-end microprocessors, low-power system-on-chips (SOCs), and implantable medical devices

Power efficient resilient microarchitectures for PVT variability mitigation

Nowadays, the high power density and the process, voltage, and temperature variations became the most critical issues that limit the performance of the digital integrated circuits because of the continuous scaling of the fabrication technology. Dynamic voltage and frequency scaling technique is used to reduce the power consumption while different time relaxation techniques and error recovery microarchitectures are used to tolerate the process, voltage, and temperature variations. These techniques reduce the throughput by scaling down the frequency or flushing and restarting the errant pipeline. This thesis presents a novel resilient microarchitecture which is called ERSUT-based resilient microarchitecture to tolerate the induced delays generated by the voltage scaling or the process, voltage, and temperature variations. The resilient microarchitecture detects and recovers the induced errors without flushing the pipeline and without scaling down the operating frequency. An ERSUT-based resilient 16 × 16 bit MAC unit, implemented using Global Foundries 65 nm technology and ARM standard cells library, is introduced as a case study with 18.26% area overhead and up to 1.5x speedup. At the typical conditions, the maximum frequency of the conventional MAC unit is about 375 MHz while the resilient MAC unit operates correctly at a frequency up to 565 MHz. In case of variations, the resilient MAC unit tolerates induced delays up to 50% of the clock period while keeping its throughput equal to the conventional MAC unit’s maximum throughput. At 375 MHz, the resilient MAC unit is able to scale down the supply voltage from 1.2 V to 1.0 V saving about 29% of the power consumed by the conventional MAC unit. A double-edge-triggered microarchitecture is also introduced to reduce the power consumption extremely by reducing the frequency of the clock tree to the half while preserving the same maximum throughput. This microarchitecture is applied to different ISCAS’89 benchmark circuits in addition to the 16x16 bit MAC unit and the average power reduction of all these circuits is 63.58% while the average area overhead is 31.02%. All these circuits are designed using Global Foundries 65nm technology and ARM standard cells library. Towards the full automation of the ERSUT-based resilient microarchitecture, an ERSUT-based algorithm is introduced in C++ to accelerate the design process of the ERSUT-based microarchitecture. The developed algorithm reduces the design-time efforts dramatically and allows the ERSUT-based microarchitecture to be adopted by larger industrial designs. Depending on the ERSUT-based algorithm, a validation study about applying the ERSUT-based microarchitecture on the MAC unit and different ISCAS’89 benchmark circuits with different complexity weights is introduced. This study shows that 72% of these circuits tolerates more than 14% of their clock periods and 54.5% of these circuits tolerates more than 20% while 27% of these circuits tolerates more than 30%. Consequently, the validation study proves that the ERSUT-based resilient microarchitecture is a valid applicable solution for different circuits with different complexity weights

Radiation Hardened by Design Methodologies for Soft-Error Mitigated Digital Architectures

abstract: Digital architectures for data encryption, processing, clock synthesis, data transfer, etc. are susceptible to radiation induced soft errors due to charge collection in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs). Radiation hardening by design (RHBD) techniques such as double modular redundancy (DMR) and triple modular redundancy (TMR) are used for error detection and correction respectively in such architectures. Multiple node charge collection (MNCC) causes domain crossing errors (DCE) which can render the redundancy ineffectual. This dissertation describes techniques to ensure DCE mitigation with statistical confidence for various designs. Both sequential and combinatorial logic are separated using these custom and computer aided design (CAD) methodologies. Radiation vulnerability and design overhead are studied on VLSI sub-systems including an advanced encryption standard (AES) which is DCE mitigated using module level coarse separation on a 90-nm process with 99.999% DCE mitigation. A radiation hardened microprocessor (HERMES2) is implemented in both 90-nm and 55-nm technologies with an interleaved separation methodology with 99.99% DCE mitigation while achieving 4.9% increased cell density, 28.5 % reduced routing and 5.6% reduced power dissipation over the module fences implementation. A DMR register-file (RF) is implemented in 55 nm process and used in the HERMES2 microprocessor. The RF array custom design and the decoders APR designed are explored with a focus on design cycle time. Quality of results (QOR) is studied from power, performance, area and reliability (PPAR) perspective to ascertain the improvement over other design techniques. A radiation hardened all-digital multiplying pulsed digital delay line (DDL) is designed for double data rate (DDR2/3) applications for data eye centering during high speed off-chip data transfer. The effect of noise, radiation particle strikes and statistical variation on the designed DDL are studied in detail. The design achieves the best in class 22.4 ps peak-to-peak jitter, 100-850 MHz range at 14 pJ/cycle energy consumption. Vulnerability of the non-hardened design is characterized and portions of the redundant DDL are separated in custom and auto-place and route (APR). Thus, a range of designs for mission critical applications are implemented using methodologies proposed in this work and their potential PPAR benefits explored in detail.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Design and Analysis of Metastable-Hardened, High-Performance, Low-Power Flip-Flops

With rapid technology scaling, flip-flops are becoming more susceptible to metastability due to tighter timing budgets and the more prominent effects of process, temperature, and voltage variation that can result in frequent setup and hold time violations. This thesis presents a detailed methodology and analysis on the design of metastable-hardened, high-performance, and low-power flip-flops. The design of metastable-hardened flip-flops is focused on optimizing the value of τ mainly due to its exponential relationship with the metastability window δ and the mean-time-between-failure (MTBF). Through small-signal modeling, τ is determined to be a function of the load capacitance and the transconductance in the cross-coupled inverter pair for a given flip-flop architecture. In most cases, the reduction of τ comes at the expense of increased delay and power. Hence, two new design metrics, the metastability-delay-product (MDP) and the metastability-power-delay-product (MPDP), are proposed to analyze the tradeoffs between delay, power and τ. Post-layout simulation results have shown that the proposed optimum MPDP design can reduce the metastability window δ by at least an order of magnitude depending on the value of the settling time and the flip-flop architecture. In this work, we have proposed two new flip-flop designs: the pre-discharge flip-flop (PDFF) and the sense-amplifier-transmission-gate (SATG) based flip-flop. Both flip-flop architectures facilitate the usage in both single and dual-supply systems as reduced clock-swing flip-flop and level-converting flip-flop. With a cross-coupled inverter in the master-stage that increases the overall transconductance and a small load transistor associated with the critical node, the architecture of both the PDFF and the SATG is very attractive for the design of metastable-hardened, high-performance, and low-power flip-flops. The amount of overhead in delay, power, and area is all less than 10% under the optimum MPDP design scheme when compared to the traditional optimum PDP design. In designing for metastable-hardened and soft-error tolerant flip-flops, the main methodology is to improve the metastability performance in the master-stage while applying the soft-error tolerant cell in the slave-stage for protection against soft-error. The proposed flip-flops, PDFF-SE and SATG-SE, both utilize a cross-coupled inverter on the critical path in the master-stage and generate the required differential signals to facilitate the usage of the Quatro soft-error tolerant cell in the slave-stage

Cross-layer Soft Error Analysis and Mitigation at Nanoscale Technologies

This thesis addresses the challenge of soft error modeling and mitigation in nansoscale technology nodes and pushes the state-of-the-art forward by proposing novel modeling, analyze and mitigation techniques. The proposed soft error sensitivity analysis platform accurately models both error generation and propagation starting from a technology dependent device level simulations all the way to workload dependent application level analysis

Study of Layout Techniques in Dynamic Logic Circuitry for Single Event Effect Mitigation

Dynamic logic circuits are highly suitable for high-speed applications, considering the fact that they have a smaller area and faster transition. However, their application in space or other radiation-rich environments has been significantly inhibited by their susceptibility to radiation effects. This work begins with the basic operations of dynamic logic circuits, elaborates upon the physics underlying their radiation vulnerability, and evaluates three techniques that harden dynamic logic from the layout: drain extension, pulse quenching, and a proposed method. The drain extension method adds an extra drain to the sensitive node in order to improve charge sharing, the pulse quenching scheme utilizes charge sharing by duplicating a component that offsets the transient pulse, and the proposed technique takes advantage of both. Domino buffers designed using these three techniques, along with a conventional design as reference, were modeled and simulated using a 3D TCAD tool. Simulation results confirm a significant reduction of soft error rate in the proposed technique and suggest a greater reduction with angled incidence. A 130 nm chip containing designed buffer and register chains was fabricated and tested with heavy ion irradiation. According to the experiment results, the proposed design achieved 30% soft error rate reduction, with 19%, 20%, and 10% overhead in speed, power, and area, respectively

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

Fault Tolerant Electronic System Design

Due to technology scaling, which means reduced transistor size, higher density, lower voltage and more aggressive clock frequency, VLSI devices may become more sensitive against soft errors. Especially for those devices used in safety- and mission-critical applications, dependability and reliability are becoming increasingly important constraints during the development of system on/around them. Other phenomena (e.g., aging and wear-out effects) also have negative impacts on reliability of modern circuits. Recent researches show that even at sea level, radiation particles can still induce soft errors in electronic systems. On one hand, processor-based system are commonly used in a wide variety of applications, including safety-critical and high availability missions, e.g., in the automotive, biomedical and aerospace domains. In these fields, an error may produce catastrophic consequences. Thus, dependability is a primary target that must be achieved taking into account tight constraints in terms of cost, performance, power and time to market. With standards and regulations (e.g., ISO-26262, DO-254, IEC-61508) clearly specify the targets to be achieved and the methods to prove their achievement, techniques working at system level are particularly attracting. On the other hand, Field Programmable Gate Array (FPGA) devices are becoming more and more attractive, also in safety- and mission-critical applications due to the high performance, low power consumption and the flexibility for reconfiguration they provide. Two types of FPGAs are commonly used, based on their configuration memory cell technology, i.e., SRAM-based and Flash-based FPGA. For SRAM-based FPGAs, the SRAM cells of the configuration memory highly susceptible to radiation induced effects which can leads to system failure; and for Flash-based FPGAs, even though their non-volatile configuration memory cells are almost immune to Single Event Upsets induced by energetic particles, the floating gate switches and the logic cells in the configuration tiles can still suffer from Single Event Effects when hit by an highly charged particle. So analysis and mitigation techniques for Single Event Effects on FPGAs are becoming increasingly important in the design flow especially when reliability is one of the main requirements

Entwurfsmethodologie für höchst zuverlässige digitale ASIC-Designs angewandt auf Network-Centric System Middleware Switch Prozessor

The sensitivity of application-specific integrated circuits (ASICs) to single event effects (SEE) can lead to failures of subsystems which are exposed to increased radiation levels in space and on the ground. The work described in this thesis presents a design methodology for a fully fault-tolerant ASIC that is immune to single event upset effects (SEU) in sequential logic, single event transient effects (SET) in combinatorial logic, and single event latchup effects (SEL). Redundant circuits combined with SEL power switches (SPS) are the basis for a design methodology which achieves this goal. Within the standard ASIC design flow enhancements were made in order to incorporate redundancy and SPS cells and, consequently, enable protection against SEU, SET, and SEL. In order to validate the resulting fault-tolerant circuits a fault-injection environment with carefully designed fault models was developed. The moments of fault occurrence and their durations are modeled according to the real effects in actual hardware. The proposed design methodology was applied to an innovative space craft area network (SCAN) central processor unit, known as middleware switch processor. The measurement results presented in this thesis prove the correct functionality of DMR and SPS circuits, as well as the high fault-tolerance of the implemented ASICs along with moderate overhead with respect to power consumption and occupied silicon area. Irradiation measurements demonstrated the correct design and successful implementation of the SPS cell.Die Empfindlichkeit von anwendungsspezifischen integrierten Schaltungen (ASICs) zu den einzelnen Ereigniseffekten (SEE), kann zu Ausfällen von Subsystemen führen, die erhöhten Strahlungspegeln im Raum und auf dem Boden ausgesetzt werden. Die Arbeit, die in dieser Thesis beschrieben wird, stellt eine Entwurfsmethodologie vor um fehlertolerante ASICs zu entwerfen, welche die immun gegen singuläre Störung Effekte (SEU) in sequentielle Logik ist, einzelne Ereignis vorübergehende Effekte (SET) in der kombinatorischen Logik und einzelnes Ereignis Latchup-Effekte (SEL). Modulare Redundanz und SEL-Schalter (SPS) sind die Basis für eine Design-Methodik, die volle fehlertolerante ASIC liefert. Der Standard ASIC-Designflow ist erweitert worden, um Redundanz mit SPS-Schalter zu enthalten und Schutz gegen SEU, SET und SEL zu ermöglichen. Um die fehlertoleranten Stromkreise zu validieren ist eine Fault-Injektion Umgebung mit Fault Modellen entwickelt worden. Die Momente des Auftretens und der Dauer der injizierten Fehler werden entsprechend den realen Effekten in die Hardware modelliert. Die Methodologie des vorgeschlagenen Entwurfs ist an einem innovativen Space Craft Area Network (SCAN) Schaltkreis angewendet worden, bekannt als Middleware Switch Prozessor. Die Messergebnisse, die in dieser These dargestellt werden, haben die korrekte Funktionalität von Redundanz- und SPS-Stromkreisen sowie die hohe Fehler-Toleranz der resultierende ASICs zusammen mit mäßigen Unkosten in Bezug auf Leistungsaufnahme und besetzten Silikonfläche nachgewiesen. Die Strahlungsmessungen haben das korrekte Design und die erfolgreiche Umsetzung der SPS-Zelle bewiesen