High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Microprocessor Seminar, phase 2

Workshop sessions and papers were devoted to various aspects of microprocessor and large scale integrated circuit technology. Presentations were made on advanced LSI developments for high reliability military and NASA applications. Microprocessor testing techniques were discussed, and test data were presented. High reliability procurement specifications were also discussed

Application of advanced technology to space automation

Automated operations in space provide the key to optimized mission design and data acquisition at minimum cost for the future. The results of this study strongly accentuate this statement and should provide further incentive for immediate development of specific automtion technology as defined herein. Essential automation technology requirements were identified for future programs. The study was undertaken to address the future role of automation in the space program, the potential benefits to be derived, and the technology efforts that should be directed toward obtaining these benefits

Mission oriented R and D and the advancement of technology: The impact of NASA contributions, volume 2

NASA contributions to the advancement of major developments in twelve selected fields of technology are presented. The twelve fields of technology discussed are: (1) cryogenics, (2) electrochemical energy conversion and storage, (3) high-temperature ceramics, (4) high-temperature metals (5) integrated circuits, (6) internal gas dynamics (7) materials machining and forming, (8) materials joining, (9) microwave systems, (10) nondestructive testing, (11) simulation, and (12) telemetry. These field were selected on the basis of both NASA and nonaerospace interest and activity

CCD research

The fundamental problems encountered in designing, fabricating, and applying CCD's are reviewed. Investigations are described and results and conclusions are given for the following: (1) the development of design analyses employing computer aided techniques and their application to the design of a grapped structure; (2) the role of CCD's in applications to electronic functions, in particular, signal processing; (3) extending the CCD to silicon films on sapphire (SOS); and (4) all aluminum transfer structure with low noise input-output circuits. Related work on CCD imaging devices is summarized