Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

Performance Parameters of Micromechanical Resonators

Ph.DDOCTOR OF PHILOSOPH

NASA Tech Briefs, Summer 1977

Topics: NASA TU Services: Technology Utilization services that can assist you in learning about and applying NASA technology; New Product Ideas: A summary of selected Innovations of value to manufacturers for the development of new products; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Life Sciences; Mechanics; Machinery; Fabrication Technology; Mathematics and Information Sciences

Narrow-Linewidth Si/III-V Lasers: a Study of Laser Dynamics and Nonlinear Effects

Narrow-linewidth lasers play an important role in a wide variety of applications, from sensing and spectroscopy to optical communication and on-chip clocks. Current narrow-linewidth systems are usually implemented in doped fibers and are big, expensive, and power-hungry. Semiconductor lasers compete favorably in size, cost, and power consumption, but their linewidth is historically limited to the sub-MHz regime. However, it has been recently demonstrated that a new design paradigm, in which the optical energy is stored away from the active region in a composite high-Q resonator, has the potential to dramatically improve the coherence of the laser. This work explores this design paradigm, as applied on the hybrid Si/III-V platform. It demonstrates a record sub-KHz white-noise-floor linewidth. It further shows, both theoretically and experimentally, that this strategy practically eliminates Henry’s linewidth enhancement by positioning a damped relaxation resonance at frequencies as low as 70 MHz, yielding truly quantum limited devices at frequencies of interest. In addition to this empirical contribution, this work explores the limits of performance of this platform. Here, the effect of two-photon-absorption and free-carrier-absorption are analyzed, using modified rate equations and Langevin force approach. The analysis predicts that as the intra-cavity field intensity builds up in the high-Q resonator, non-linear effects cause a new domain of performance-limiting factors. Steady-state behavior, laser dynamics, and frequency noise performance are examined in the context of this unique platform, pointing at the importance of nonlinear effects. This work offers a theoretical model predicting laser performance in light of nonlinear effects, obtaining a good agreement with experimental results from fabricated high-Q Si/III-V lasers. In addition to demonstrating unprecedented semiconductor laser performance, this work establishes a first attempt to predict and demonstrate the key impact of nonlinear effects on silicon-based lasers.</p

Feasibility study of a noncontacting, remote sensing displacement transducer Final report, 17 Apr. 1967 - 12 Jan. 1968

Feasibility and design of helium-neon laser displacement transduce

Development of a solid state amplifier for the 3rd harmonic cavity for ALBA synchrotron light source

In Synchrotron Light Source facilities with high energy and low emittance electron beams different techniques for improving the quality of the synchrotron light for the users are applied. With this aim ALBA, the Spanish 3rd generation Synchrotron Light Source, is developing a 3rd Harmonic radiofrequency (RF) system as a system additional to the main RF system of the storage ring. This system will consist of four normal conducting active cavities at 1.5 GHz that will provide the required 1.1 MV accelerating voltage to the electron beam and will be fed by four 20 kW power transmitters. This power will be generated by modular Solid State Power Amplifiers (SSPAs) in a continuous wave mode at 1.5 GHz. On the basis of preliminary studies it has been decided that the architecture of each 20 kW power transmitter is a tree diagram made up of primary 1 kW SSPA modules connected in parallel in a combination array. The present PhD thesis is devoted to the design, building and evaluation of a prototype of the 1 kW SSPA module formed four 250 W primary power amplifier modules. Accordingly, all subsystems, namely input and output matching networks of the 250 W primary module, and a four-way power splitter, a four-way power combiner and a novel directivity compensated directional coupler for the non-invasive power monitoring of the 1 kW power amplifier were also designed and their prototypes were tested. A final evaluation of the combined 1 kW SSPA prototype module was successfully carried out and has shown good performance.En las instalaciones de tipo Fuentes de luz de sincrotrón de haz de electrones de alta energía y baja emitancia se aplican diferentes técnicas de mejora de la calidad de la luz de sincrotrón. Con este objetivo, el ALBA, la fuente española de luz de sincrotrón de la tercera generación, está desarrollando un sistema de radiofrecuencia (RF) de la 3ª Harmónica como un sistema adicional al sistema de RF principal del anillo de almacenamiento. Este sistema consistirá de cuatro cavidades activas de conductividad normal de frecuencia 1,5 GHz que suministrarán un voltaje acelerador de 1.1 MV necesario para el haz de electrones y que serán alimentadas por cuatro transmisores de potencia de 20 kW. Esta potencia será generada en modo de onda continua a frecuencia 1.5 GHz por amplificadores de potencia de estado sólido (APES) de estructura modular. A partir de unos estudios preliminares se ha decidido que la arquitectura de cada transmisor de potencia de 20 kW es de tipo diagrama de árbol que consiste de APES primarios de potencia 1 kW conectados en paralelo formando una matriz de combinación. El tema de la presente tesis es el diseño, la construcción y la caracterización de un prototipo del módulo de APES de potencia 1 kW formado por cuatro amplificadores primarios de 250 W de potencia. También, todos subsistemas, concretamente los circuitos de adaptación de entrada y de salida del módulo primario de 250 kW, así como un divisor de cuatro salidas, un combinador de cuatro entradas y un acoplador direccional con una nova solución de compensación de directividad para una monitorización no invasiva han sido diseñados y sus prototipos han sido testeados. La evaluación final de funcionamiento del APES de 1 kW de potencia ha sido realizada con éxito y ha demostrado su buen rendimiento

Development of a solid state amplifier for the 3rd harmonic cavity for ALBA synchrotron light source

In Synchrotron Light Source facilities with high energy and low emittance electron beams different techniques for improving the quality of the synchrotron light for the users are applied. With this aim ALBA, the Spanish 3rd generation Synchrotron Light Source, is developing a 3rd Harmonic radiofrequency (RF) system as a system additional to the main RF system of the storage ring. This system will consist of four normal conducting active cavities at 1.5 GHz that will provide the required 1.1 MV accelerating voltage to the electron beam and will be fed by four 20 kW power transmitters. This power will be generated by modular Solid State Power Amplifiers (SSPAs) in a continuous wave mode at 1.5 GHz. On the basis of preliminary studies it has been decided that the architecture of each 20 kW power transmitter is a tree diagram made up of primary 1 kW SSPA modules connected in parallel in a combination array. The present PhD thesis is devoted to the design, building and evaluation of a prototype of the 1 kW SSPA module formed four 250 W primary power amplifier modules. Accordingly, all subsystems, namely input and output matching networks of the 250 W primary module, and a four-way power splitter, a four-way power combiner and a novel directivity compensated directional coupler for the non-invasive power monitoring of the 1 kW power amplifier were also designed and their prototypes were tested. A final evaluation of the combined 1 kW SSPA prototype module was successfully carried out and has shown good performance.En las instalaciones de tipo Fuentes de luz de sincrotrón de haz de electrones de alta energía y baja emitancia se aplican diferentes técnicas de mejora de la calidad de la luz de sincrotrón. Con este objetivo, el ALBA, la fuente española de luz de sincrotrón de la tercera generación, está desarrollando un sistema de radiofrecuencia (RF) de la 3ª Harmónica como un sistema adicional al sistema de RF principal del anillo de almacenamiento. Este sistema consistirá de cuatro cavidades activas de conductividad normal de frecuencia 1,5 GHz que suministrarán un voltaje acelerador de 1.1 MV necesario para el haz de electrones y que serán alimentadas por cuatro transmisores de potencia de 20 kW. Esta potencia será generada en modo de onda continua a frecuencia 1.5 GHz por amplificadores de potencia de estado sólido (APES) de estructura modular. A partir de unos estudios preliminares se ha decidido que la arquitectura de cada transmisor de potencia de 20 kW es de tipo diagrama de árbol que consiste de APES primarios de potencia 1 kW conectados en paralelo formando una matriz de combinación. El tema de la presente tesis es el diseño, la construcción y la caracterización de un prototipo del módulo de APES de potencia 1 kW formado por cuatro amplificadores primarios de 250 W de potencia. También, todos subsistemas, concretamente los circuitos de adaptación de entrada y de salida del módulo primario de 250 kW, así como un divisor de cuatro salidas, un combinador de cuatro entradas y un acoplador direccional con una nova solución de compensación de directividad para una monitorización no invasiva han sido diseñados y sus prototipos han sido testeados. La evaluación final de funcionamiento del APES de 1 kW de potencia ha sido realizada con éxito y ha demostrado su buen rendimiento.Postprint (published version

LOW POWER AND HIGH SIGNAL TO NOISE RATIO BIO-MEDICAL AFE DESIGN TECHNIQUES

The research work described in this thesis was focused on finding novel techniques to implement a low-power and noise Bio-Medical Analog Front End (BMEF) circuit technique to enable high-quality Electrocardiography (ECG) sensing. Usually, an ECG signal and several bio-medical signals are sensed from the human body through a pair of electrodes. The electrical characteristics of the very small amplitude (1u-10mV) signals are corrupted by random noise and have a significant dc offset. 50/60Hz power supply coupling noise is one of the biggest cross-talk signals compared to the thermally generated random noise. These signals are even AFE composed of an Instrumentation Amplifier (IA), which will have a better Common Mode rejection ratio (CMRR). The main function of the AFE is to convert the weak electrical Signal into large signals whose amplitude is large enough for an Analog Digital Converter (ADC) to detect without having any errors. A Variable Gain Amplifier (VGA) is sometimes required to adjust signal amplitude to maintain the dynamic range of the ADC. Also, the Bio-medical transceiver needs an accurate and temperature-independent reference voltage and current for the ADC, commonly known as Bandgap Reference Circuit (BGR). These circuits need to consume as low power as possible to enable these circuits to be powered from the battery. The work started with analysing the existing circuit techniques for the circuits mentioned above and finding the key important improvements required to reach the target specifications. Previously proposed IA is generated based on voltage mode signal processing. To improve the CMRR (119dB), we proposed a current mode-based IA with an embedded DC cancellation technique. State-of-the-art VGA circuits were built based on the degeneration principle of the differential pair, which will enable the variable gain purpose, but none of these techniques discussed linearity improvement, which is very important in modern CMOS technologies. This work enhances the total Harmonic distortion (THD) by 21dB in the worst case by exploiting the feedback techniques around the differential pair. Also, this work proposes a low power curvature compensated bandgap with 2ppm/0C temperature sensitivity while consuming 12.5uW power from a 1.2V dc power supply. All circuits were built in 45nm TSMC-CMOS technology and simulated with all the performance metrics with Cadence (spectre) simulator. The circuit layout was carried out to study post-layout parasitic effect sensitivity