Performance and Memory Space Optimizations for Embedded Systems

Embedded systems have three common principles: real-time performance, low power consumption, and low price (limited hardware). Embedded computers use chip multiprocessors (CMPs) to meet these expectations. However, one of the major problems is lack of efficient software support for CMPs; in particular, automated code parallelizers are needed. The aim of this study is to explore various ways to increase performance, as well as reducing resource usage and energy consumption for embedded systems. We use code restructuring, loop scheduling, data transformation, code and data placement, and scratch-pad memory (SPM) management as our tools in different embedded system scenarios. The majority of our work is focused on loop scheduling. Main contributions of our work are: We propose a memory saving strategy that exploits the value locality in array data by storing arrays in a compressed form. Based on the compressed forms of the input arrays, our approach automatically determines the compressed forms of the output arrays and also automatically restructures the code. We propose and evaluate a compiler-directed code scheduling scheme, which considers both parallelism and data locality. It analyzes the code using a locality parallelism graph representation, and assigns the nodes of this graph to processors.We also introduce an Integer Linear Programming based formulation of the scheduling problem. We propose a compiler-based SPM conscious loop scheduling strategy for array/loop based embedded applications. The method is to distribute loop iterations across parallel processors in an SPM-conscious manner. The compiler identifies potential SPM hits and misses, and distributes loop iterations such that the processors have close execution times. We present an SPM management technique using Markov chain based data access. We propose a compiler directed integrated code and data placement scheme for 2-D mesh based CMP architectures. Using a Code-Data Affinity Graph (CDAG) to represent the relationship between loop iterations and array data, it assigns the sets of loop iterations to processing cores and sets of data blocks to on-chip memories. We present a memory bank aware dynamic loop scheduling scheme for array intensive applications.The goal is to minimize the number of memory banks needed for executing the group of loop iterations

Coarse-grained reconfigurable array architectures

Coarse-Grained Reconfigurable Array (CGRA) architectures accelerate the same inner loops that benefit from the high ILP support in VLIW architectures. By executing non-loop code on other cores, however, CGRAs can focus on such loops to execute them more efficiently. This chapter discusses the basic principles of CGRAs, and the wide range of design options available to a CGRA designer, covering a large number of existing CGRA designs. The impact of different options on flexibility, performance, and power-efficiency is discussed, as well as the need for compiler support. The ADRES CGRA design template is studied in more detail as a use case to illustrate the need for design space exploration, for compiler support and for the manual fine-tuning of source code

The Impact of Process Scaling on Scratchpad Memory Energy Savings

Scratchpad memories have been shown to reduce power consumption, but the different characteristics of nanometer scale processes, such as increased leakage power, motivate an examination of how the benefits of these memories change with process scaling. Process and application characteristics affect the amount of energy saved by a scratchpad memory. Increases in leakage as a percentage of total power particularly impact applications that rarely access memory. This study examines how the benefits of scratchpad memories have changed in newer processes, based on the measured performance of the WIMS (Wireless Integrated MicroSystems) microcontroller implemented in 180- and 65-nm processes and upon simulations of this microcontroller implemented in a 32-nm process. The results demonstrate that scratchpad memories will continue to improve the power dissipation of many applications, given the leakage anticipated in the foreseeable future

Using data compression for increasing memory system utilization

Cataloged from PDF version of article.The memory system presents one of the critical challenges in embedded system design and optimization. This is mainly due to the ever-increasing code complexity of embedded applications and the exponential increase seen in the amount of data they manipulate. The memory bottleneck is even more important for multiprocessor-system-on-a-chip (MPSoC) architectures due to the high cost of off-chip memory accesses in terms of both energy and performance. As a result, reducing the memory-space occupancy of embedded applications is very important and will be even more important in the next decade. While it is true that the on-chip memory capacity of embedded systems is continuously increasing, the increases in the complexity of embedded applications and the sizes of the data sets they process are far greater. Motivated by this observation, this paper presents and evaluates a compiler-driven approach to data compression for reducing memory-space occupancy. Our goal is to study how automated compiler support can help in deciding the set of data elements to compress/decompress and the points during execution at which these compressions/decompressions should be performed. We first study this problem in the context of single-core systems and then extend it to MPSoCs where we schedule compressions and decompressions intelligently such that they do not conflict with application execution as much as possible. Particularly, in MPSoCs, one needs to decide which processors should participate in the compression and decompression activities at any given point during the course of execution. We propose both static and dynamic algorithms for this purpose. In the static scheme, the processors are divided into two groups: those performing compression/decompression and those executing the application, and this grouping is maintained throughout the execution of the application. In the dynamic scheme, on the other hand, the execution starts with some grouping but this grouping can change during the course of execution, depending on the dynamic variations in the data access pattern. Our experimental results show that, in a single-core system, the proposed approach reduces maximum memory occupancy by 47.9% and average memory occupancy by 48.3% when averaged over all the benchmarks. Our results also indicate that, in an MPSoC, the average energy saving is 12.7% when all eight benchmarks are considered. While compressions and decompressions and related bookkeeping activities take extra cycles and memory space and consume additional energy, we found that the improvements they bring from the memory space, execution cycles, and energy perspectives are much higher than these overheads

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Compiler-Decided Dynamic Memory Allocation for Scratch-Pad Based Embedded Systems

In this research we propose a highly predictable, low overhead and yet dynamic, memory allocation strategy for embedded systems with scratch-pad memory. A scratch-pad is a fast compiler-managed SRAM memory that replaces the hardware-managed cache. It is motivated by its better real-time guarantees vs cache and by its significantly lower overheads in energy consumption, area and overall runtime, even with a simple allocation scheme. Scratch-pad allocation methods primarily are of two types. First, software-caching schemes emulate the workings of a hardware cache in software. Instructions are inserted before each load/store to check the software-maintained cache tags. Such methods incur large overheads in runtime, code size, energy consumption and SRAM space for tags and deliver poor real-time guarantees, just like hardware caches. A second category of algorithms partitions variables at compile-time into the two banks. However, a drawback of such static allocation schemes is that they do not account for dynamic program behavior. We propose a dynamic allocation methodology for global and stack data and program code that (i) accounts for changing program requirements at runtime (ii) has no software-caching tags (iii) requires no run-time checks (iv) has extremely low overheads, and (v) yields 100% predictable memory access times. In this method data that is about to be accessed frequently is copied into the scratch-pad using compiler-inserted code at fixed and infrequent points in the program. Earlier data is evicted if necessary. When compared to an existing static allocation scheme, results show that our scheme reduces runtime by up to 39.8% and energy by up to 31.3% on average for our benchmarks, depending on the SRAM size used. The actual gain depends on the SRAM size, but our results show that close to the maximum benefit in run-time and energy is achieved for a substantial range of small SRAM sizes commonly found in embedded systems. Our comparison with a direct mapped cache shows that our method performs roughly as well as a cached architecture in runtime and energy while delivering better real-time benefits

Design and Code Optimization for Systems with Next-generation Racetrack Memories

With the rise of computationally expensive application domains such as machine learning, genomics, and fluids simulation, the quest for performance and energy-efficient computing has gained unprecedented momentum. The significant increase in computing and memory devices in modern systems has resulted in an unsustainable surge in energy consumption, a substantial portion of which is attributed to the memory system. The scaling of conventional memory technologies and their suitability for the next-generation system is also questionable. This has led to the emergence and rise of nonvolatile memory ( NVM ) technologies. Today, in different development stages, several NVM technologies are competing for their rapid access to the market. Racetrack memory ( RTM ) is one such nonvolatile memory technology that promises SRAM -comparable latency, reduced energy consumption, and unprecedented density compared to other technologies. However, racetrack memory ( RTM ) is sequential in nature, i.e., data in an RTM cell needs to be shifted to an access port before it can be accessed. These shift operations incur performance and energy penalties. An ideal RTM , requiring at most one shift per access, can easily outperform SRAM . However, in the worst-cast shifting scenario, RTM can be an order of magnitude slower than SRAM . This thesis presents an overview of the RTM device physics, its evolution, strengths and challenges, and its application in the memory subsystem. We develop tools that allow the programmability and modeling of RTM -based systems. For shifts minimization, we propose a set of techniques including optimal, near-optimal, and evolutionary algorithms for efficient scalar and instruction placement in RTMs . For array accesses, we explore schedule and layout transformations that eliminate the longer overhead shifts in RTMs . We present an automatic compilation framework that analyzes static control flow programs and transforms the loop traversal order and memory layout to maximize accesses to consecutive RTM locations and minimize shifts. We develop a simulation framework called RTSim that models various RTM parameters and enables accurate architectural level simulation. Finally, to demonstrate the RTM potential in non-Von-Neumann in-memory computing paradigms, we exploit its device attributes to implement logic and arithmetic operations. As a concrete use-case, we implement an entire hyperdimensional computing framework in RTM to accelerate the language recognition problem. Our evaluation shows considerable performance and energy improvements compared to conventional Von-Neumann models and state-of-the-art accelerators

Doctor of Philosophy

dissertationAdvancements in process technology and circuit techniques have enabled the creation of small chemical microsystems for use in a wide variety of biomedical and sensing applications. For applications requiring a small microsystem, many components can be integrated onto a single chip. This dissertation presents many low-power circuits, digital and analog, integrated onto a single chip called the Utah Microcontroller. To guide the design decisions for each of these components, two specific microsystems have been selected as target applications: a Smart Intravaginal Ring (S-IVR) and an NO releasing catheter. Both of these applications share the challenging requirements of integrating a large variety of low-power mixed-signal circuitry onto a single chip. These applications represent the requirements of a broad variety of small low-power sensing systems. In the course of the development of the Utah Microcontroller, several unique and significant contributions were made. A central component of the Utah Microcontroller is the WIMS Microprocessor, which incorporates a low-power feature called a scratchpad memory. For the first time, an analysis of scaling trends projected that scratchpad memories will continue to save power for the foreseeable future. This conclusion was bolstered by measured data from a fabricated microcontroller. In a 32 nm version of the WIMS Microprocessor, the scratchpad memory is projected to save ~10-30% of memory access energy depending upon the characteristics of the embedded program. Close examination of application requirements informed the design of an analog-to-digital converter, and a unique single-opamp buffered charge scaling DAC was developed to minimize power consumption. The opamp was designed to simultaneously meet the varied demands of many chip components to maximize circuit reuse. Each of these components are functional, have been integrated, fabricated, and tested. This dissertation successfully demonstrates that the needs of emerging small low-power microsystems can be met in advanced process nodes with the incorporation of low-power circuit techniques and design choices driven by application requirements