Evaluation of commercial ADC radiation tolerance for accelerator experiments

Electronic components used in high energy physics experiments are subjected to a radiation background composed of high energy hadrons, mesons and photons. These particles can induce permanent and transient effects that affect the normal device operation. Ionizing dose and displacement damage can cause chronic damage which disable the device permanently. Transient effects or single event effects are in general recoverable with time intervals that depend on the nature of the failure. The magnitude of these effects is technology dependent with feature size being one of the key parameters. Analog to digital converters are components that are frequently used in detector front end electronics, generally placed as close as possible to the sensing elements to maximize signal fidelity. We report on radiation effects tests conducted on 17 commercially available analog to digital converters and extensive single event effect measurements on specific twelve and fourteen bit ADCs that presented high tolerance to ionizing dose. Mitigation strategies for single event effects (SEE) are discussed for their use in the large hadron collider environment.Comment: 16 pages, 8 figure

Investigating the Optical Link Performance of the End-of Substructure Card and Susceptibility to SEUs

Particle physics experiments carried out by CERN attempt to investigate the fundamental forces of matter. One of these experiments is the ATLAS experiment, which studies the proton-proton collisions in the LHC. A series of upgrades are planned to increase the luminosity by a factor of five, leading to the high-luminosity LHC (HL-LHC). This upgrade will increase the potential for new discoveries but brings with it design challenges in relation to the harsh radiation environment and significant data throughput required. The ATLAS experiment is building a new detector to cope with these challenges, titled the Inner Tracker (ITk). A crucial part of this new detector is the End-of-Substructure (EoS) card, which constitutes the interface between the ondetector electronics and the off-detector systems. In addition to the operational challenges, the HL-LHC does not allow for repairs or replacing of EoS cards once operation commences, emphasizing the need for thorough testing and qualification of this component. This thesis focuses on characterizing the performance of the EoS card in the presence of radiation, under non-ideal operating conditions and the impact of optical link parameters. The first set of tests is centered on qualifying the radiation tolerance of the EoS card. The radiation environment within the ITk poses a threat to the stable operation of electronics as energetic particles have the potential to cause erroneous changes in device logic, known as Single Event Upsets (SEU). The SEU susceptibility of the EoS card, with a focus on the Versatile Link Plus Transceiver (VTRx+) component, is studied by irradiating the EoS card with a neutron source with a distributed energy spectrum and a peak energy of 11MeV while performing a bit error rate (BER) test to monitor for radiation induced errors. The second set of tests deals with characterizing the impact of an irregular power supply on the EoS card's performance through simulating noise on the supply lines and monitoring the response in BER. The final set of tests investigates the impact the VTRx+ configuration parameters have on the quality of the optical signal. These tests were carried out at the University of Cape Town (UCT) with the support of DESY, a national research institute in Germany, responsible for the production of the EoS cards. A number of new firmware, software and hardware modules were developed as part of this work in order to carry out the tests required. The most significant of which comprised a novel firmware addition allowing for the evaluation of the optical signal quality with an FPGA. This contribution is now being integrated into the quality control proceedings at DESY, to be used in assessing optical signal quality of the entire set of approximately 1552 EoS cards being produced

The Use of Microprocessor Trace Infrastructures for Radiation-Induced Fault Diagnosis

This work proposes a methodology to diagnoseradiation-induced faults in a microprocessor using the hardwaretrace infrastructure. The diagnosis capabilities of this approachare demonstrated for an ARM microprocessor under neutronand proton irradiation campaigns. The experimental resultsdemonstrate that the execution status in the precise moment thatthe error occurred can be reconstructed, so that error diagnosiscan be achieved

Design, implementation and testing of SRAM based neutron detectors

Neutrons of thermal and high energies can change the value of a bit stored in a Static Random Access Memory (SRAM) memory chip. The effect is non destructive and linearly dependent on the amount of incoming particles, which makes it exploitable for use as a neutron detector. Detection is done by writing a known pattern to the memory and continuously reading it back checking for wrong values. As the SRAM memory is immune to gamma radiation it is ideal for use in for instance medical linear accelerators for detection of neutron dose to a patient. The intention of this work has been twofold: (1) Testing of different SRAM devices of different bit-sizes, manufacturers, feature sizes and voltages for their sensitivity to neutrons of different energies from thermal to high energies. (2) Design and implement detector hardware, firmware and its accompanying readout system for successful use in irradiation testing. The work has been done in close collaboration with Eivind Larsen, whose main contributions has been related to the nuclear physics aspect of the work in addition to arrangements in regard to beam setup and experimentation. Testing have been done at the Physikalisch-Technische Bundesanstalt (PTB) facility in Braunschweig Germany in a quasi-monochromatic neutron beam of 5:8MeV, 8:5MeV and 14:8MeV, finding a dependence of the sensitivity on the energy. In addition there have been testing conducted in the high energy hadron field at CERF at CERN, finding that by using the results from the other experiments an estimated range of the saturation cross section could be determined. Testing was also conducted at two occasions in the 29MeV proton beam at Oslo Cyclotron Laboratory (OCL) in Oslo Norway, where it was found that the detector could be used as a reference detector for beam monitoring and for beam profile characterization. The cross sections of the detectors were found to be comparable to the 14:8MeV cross section found at PTB. Thermal neutron testing of the devices was done in the thermal neutron field of the nuclear reactor at Institute for Energy Technology (IFE) at Kjeller Norway. All the devices were found to be sensitive to the field. Detector electronics, adapted to the different devices, has been built which can withstand the same radiation as the memory device without malfunctioning. There has been a focus on using Commercial Off The Shelf (COTS) components for reducing the total cost of the detector to about 100-200$US. The use of COTS SRAM memory devices also simplifies the reproducibility and availability of spares. The detector currently uses a two way communication between the detector and iv Abstract the readout computer over two pair of cables reducing the amount of cabling needed for experiments. The detectors can be connected to the communication link in a bus fashion, currently enabling a total of 14 detectors to be tested simultaneously from 100m away, over the same cable. Single Event Latch-up (SEL) and problems with irregular count rate of SRAMs created in the 90nm fabrication node has created problems during testing. Some solutions and techniques to mitigate these in hardware and firmware are presented in this work.Master i FysikkMAMN-PHYSPHYS39

Characterizing Single Event Upsets within the lpGBT-based End-of-Substructure Card

The CERN ATLAS particle physics experiment is currently undergoing a significant system upgrade (ATLAS Phase II upgrade). As a result of the upgrade the experiment's Inner Tracker (ITk) and the front-end electronics of the ITk are being redesigned to handle increased data rates and a higher radiation environment. Within the ITk, the End Of Substructure (EoS) card is a new custom designed digital board that will provide the data, command, and power interface between on and off-detector electronics. Each EoS card makes use of one or two custom CERN designed low power Gigabit Transceivers (lpGBTs) ASICS that have been created for the purposes of supporting high bandwidth optical links in high radiation environments throughout CERN experiments. An estimated 1552 EoS cards will be installed in the ITk, each representing a potential point of failure. Given the complexity and quantity of new hardware designs involved, and that the EoS cards will be not be accessible or serviceable after the upgrade has been completed, there is a need for rigorous quality assurance (QA) and quality control (QC) testing. This thesis therefore describes an independent test setup commissioned, by the author, at the University of Cape Town (UCT) Physics Department for characterising aspects of EoS card's operation under representative radiation conditions. Specifically, the radiation environment of the ITk poses a challenge to electronics as energetic particles can deposit their energy within the circuit material resulting in an erroneous change in logic known as a Single Event Upset (SEU). The lpGBT is a radiation tolerant ASIC and employs digital signal processing (DSP) and triple modular redundancy (TMR) techniques to mitigate against the effects of SEUs on transmitted data. This thesis presents an experiment setup which tests this hypothesis that the DSP stages are susceptible to data corruption caused by SEUs. In addition the setup also attempts to characterize the susceptibility of the scrambler, encoder, and interleaver stages within the lpGBT to SEUs. This experiment is carried out by actively irradiating an EoS card with a neutron source (energy spectrum of up to 11 MeV), while emulating each stage on a non-irradiated off-board FPGA. Additionally and in support of this experiment, the existing firmware and LabView automation software developed at DESY are extended. Results from this thesis indicate that the DSP stages within the lpGBT are susceptible to data corruption caused by SEUs. It was also shown that the susceptibility of the experiment itself did not effect the measured SEU rates. Finally, preliminary results suggest that susceptibility of the DSP stages within the lpGBT can be characterized as the Bit Error Rate (BER) increases depending on the number of active stages

Single Event Upsets under 14-MeV Neutrons in a 28-nm SRAM-based FPGA in Static Mode

A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and classified as cells of the configuration RAM, BRAM, or flip-flops. SBUs and MCUs with multiplicities ranging from 2 to 8 were identified using a statistical method. Possible shapes of multiple events are also investigated, showing a trend to follow wordlines. Finally, MUSCA SEP3 was used to make assesment for actual environments and an improvement of SEU injection test is proposed

Experimental evidence of ground albedo neutron impact on Soft Error Rate for nanoscale devices

International audienceThis work demonstrates the experimental evidence of ground albedo neutron impact on Soft Error Rate (SER) for nanoscale devices. The SER of a 45 nm technology was measured according to an experimental protocol using a californium sealed source and several scenes based on material blocks. High density polyethylene and concrete materials were considered to investigate the intrinsic role in albedo neutron productions and their effect on devices. Results show the impact in the spectrum concern mainly energies below 5 MeV. Devices are characterized by a sensitivity which varies according to the presence or not of thethe material block. Simulations using GEANT4 and MUSCA SEP3 tool were performed to extend analyses. A final part is devoted to investigate the impact of ground albedo neutrons on SER by considering realistic terrestrial neutron field

SEU Sensitivity Comparison for Different Reprogrammable Technologies With Minority Check Block

In this work, a method is proposed for obtaining comparable measurements of the SEU sensitivity in reprogrammable devices that present different characteristics like internal architecture, technology, amount of available resources, etc. A specific minority checker is developed for reporting the presence of SEUs or MBUs which will help in this comparing task during dynamic tests.This work was supported in part by the Spanish Ministry of Science and Technology, code TEC2010-22095-C03-03. RENASER+ projec

FPGA Qualification and Failure Rate Estimation Methodology for LHC Environments Using Benchmarks Test Circuits

When studying the behavior of a field programmable gate array (FPGA) under radiation, the most commonly used methodology consists in evaluating the single-event effect (SEE) cross section of its elements individually. However, this method does not allow the estimation of the device failure rate when using a custom design. An alternative approach based on benchmark circuits is presented in this article. It allows standardized application-level testing, which makes the comparison between different FPGAs easier. Moreover, it allows the evaluation of the FPGA failure rate independent of the application that will be implemented. The employed benchmark circuit belongs to the ITC’99 benchmark suite developed at Politecnico di Torino. Using the proposed methodology, the response of four FPGAs—the NG-Medium, the ProASIC3, the SmartFusion2, and the PolarFire—was evaluated under high-energy protons. Radiation tests with thermal neutrons were also conducted on the PolarFire to assess its potential sensitivity to them. Moreover, its performances in terms of total ionizing dose (TID) effects have been evaluated by measuring the degradation of the propagation delay during irradiatio