Evaluation of silicon MOSFETs and GaN HEMTs in soft‐switched and hard‐switched DC‐DC boost converters for domestic PV applications

Hard‐switched high‐gain DC‐DC converters such as the boost converter play an important role in renewable energy systems. Research to increase their efficiency is important and can be achieved using soft‐switching techniques; however, that approach requires an auxiliary circuit. The auxiliary circuit decreases power density and reliability while increasing the cost. Moreover, soft‐switching topologies usually cannot improve the efficiency for all power and voltage ranges. Wide bandgap (WBG) devices, such as gallium nitride (GaN), result in lower switching losses than silicon (Si), can be used while retaining the simple structure of a hard‐switched topology. However, the high cost of these devices is problematic for their frequently cost‐sensitive applications. To quantify the cost and efficiency, this study compares soft‐switching techniques and WBG‐based switches in DC‐DC boost converters for a photovoltaic (PV) energy application. The performance of four prototypes including the soft‐switched and hard‐switched DC‐DC converters with both state‐of‐the‐art Si and GaN switches are evaluated in terms of cost, power density, efficiency, and reliability using theoretical analysis, simulation and experimental results. It is shown that the GaN‐based hard‐switched converter provides higher efficiency and power density; it is more expensive than its Si‐based counterpart, yet is cheaper than soft‐switched converters

SiC MOSFET and GaN FET in high voltage switching applications

For several decades, silicon-based semiconductor devices, such as Si MOSFETs have been the main choice for switching applications. However, their level of performance is approaching its maximum potential, and further development becomes increasingly challenging. As a result, semiconductor manufacturers and the electronics industry are exploring new technologies to meet current requirements. One promising option is the use of WBG (Wide Band Gap) devices, such as GaN FETs and SiC MOSFETs, which have gained attention due to their superior performance characteristics. Compared to traditional Si transistors, WBG devices can withstand higher voltages and tem-peratures, are faster, can be packed in smaller sizes, and are more efficient. This study aims to serve as a guide for designers seeking information on the technology and usage of WBG transistors, particularly in high voltage switching applications. The study in-cludes an examination of the structures of SiC MOSFETs and GaN FETs, as well as their most important electrical characteristics. Additionally, the efficiency of an LCC converter was measured to compare the performance of various FET types, with a specific interest in the use of WBG devices in soft switching applications. Scientific articles, application notes, and datasheets were investigated to provide a thorough understanding of the theory behind SiC MOSFETs and GaN FETs. According to resources, the primary SiC MOSFET and GaN FET technologies suitable for high voltage switching are planar SiC MOSFET, trench SiC MOSFET, p-GaN FET and GaN/Si cascode transistor. These devices are currently available with breakdown voltages of 1700 V (planar SiC MOSFET), 2000 V (trench SiC MOSFET), 650 V (p-GaN FET) and 900 V (GaN/Si cascode transistor). The efficiency of an LCC converter with a maximum output power of 40 W was measured using 1500 V Si MOSFET, 1700 V planar SiC MOSFET, 1700 V trench SiC MOSFET, and 900 V GaN/Si cascode transistor. A constant load of 1 A was used, and the input voltage was incre-mentally increased from 300 V to 900 V in 100 V steps. According to results, using planar and trench SiC MOSFETs, LCC converter had the highest efficiency, reaching up to 89,6 % while Si MOSFET exhibited slightly lower efficiency, which was 87,7 % at its best. GaN/Si cascode tran-sistors showed comparable efficiency to SiC MOSFETs at lower input voltages but fell signifi-cantly behind as the voltage increased, having eventually much worse efficiency than Si MOSFET.Useiden vuosikymmenien ajan pii-pohjaiset puolijohteet, kuten pii MOSFETit, ovat olleet pääasiallinen teknologia katkojasovelluksissa. Niiden suorituskyky lähestyy kuitenkin ylärajaa, ja niiden kehittäminen käy yhä vaikeammaksi. Tämän vuoksi puolijohdevalmistajat ja elektroniikkateollisuus etsivät uusia teknologioita täyttää nykyiset vaatimukset. Yksi lupaava teknologia ovat laajan energiavyön puolijohteet, kuten galliumnitridi FETit ja piikarbidi MOSFETit. Viime vuosina ne ovat herättäneet paljon huomiota niiden ylivoimaisten ominaisuuksien vuoksi. Verrattuna perinteisiin pii MOSFETeihin, laajan energiavyön transistorit kestävät suurempia jännitteitä ja lämpötiloja, ovat nopeampia ja ne voidaan pakata pienempään kokoon. Lisäksi ne ovat tehokkaampia. Tämä diplomityö pyrkii toimimaan oppaana elektroniikkasuunnittelijoille, jotka etsivät tietoa laajan energiavyön transistoreista ja niiden käytöstä erityisesti suurjännitekatkojasovelluksissa.Työssä tarkastellaan piikarbidi MOSFETien ja galliumnitridi FETien rakenteita sekä niiden tärkeimpiä sähköisiä ominaisuuksia. Lisäksi mitattiin kelaan ja kahteen kondensaattoriin perustuvan LCC resonanssiteholähteen hyötysuhde eri FET-tyypeillä, koska haluttiin saada tietoa laajan energiavyön transistorien käytöstä pehmeässä jännitteen katkonnassa. Tiedon keräämiseksi tutkittiin tieteellisiä artikkeleita, sovellusohjeita ja datalehtiä. Lähdeaineiston perusteella pääasialliset piikarbidi MOSFETien ja galliumnitridi FETien teknologiat suurjännitesovellusten alueella ovat planaarinen piikarbidi MOSFET, erityiseen kaivanto teknologiaan (trench) perustuva piikarbidi MOSFET, p-tyypin galliumnitridi FET ja galliumnitridi/pii kaskadi transistori. Tällä hetkellä näitä teknologioita on kaupallisesti saatavilla enimmillään 1700 V (planaarinen piikarbidi MOSFET), 2000 V (kaivanto piikarbidi MOSFET), 650 V (p-tyypin galliumnitridi FET) ja 900 V (galliumnitridi/pii kaskadi transistori) jännitteillä. Nimellisteholtaan 40 W LCC resonanssi teholähteen hyötysuhde mitattiin 1500 V pii MOSFETeilla, 1700 V planaarisilla piikarbidi MOSFETeilla, 1700 V kaivanto piikarbidi MOSFETeilla ja 900 V gallium-nitridi/pii kaskadi transistoreilla. Kuormana käytettiin 1 A vakiokuormaa ja tulojännitettä nostettiin asteittain 300 voltista 900 voltiin 100 voltin nostoin. Tulosten mukaan paras hyötysuhde oli 89,6 %, joka mitattiin planaarisella piikarbidi MOSFETilla ja kaivanto piikarbidi MOSFETilla. Pii MOSFETien tapauksessa hyötysuhde oli hieman huonompi, ollen parhaimmillaan 87,7 %. Alhaisilla jännitteillä galliumnitridi/pii kaskadi transistorien hyötysuhde oli verrattavissa piikarbidi MOSFETeihin, mutta hyötysuhde laski jännitettä nostettaessa, ollen lopulta merkittävästi huonompi kuin pii MOSFETeilla

Comparative Study of Optimally Designed DC-DC Converters with SiC and Si Power Devices

In this chapter, power losses and mass of optimally designed Si- vs. SiC-based isolated DC-DC converters are compared in quantitative terms. To that end, an adapted version of a computer-aided design tool, previously published by the authors, is used. The database of the existing tool was completed with new wide band gap semiconductor devices currently available from manufacturers. The results are presented for two switch-mode power supplies, each constituted of an isolated DC-DC converter, operating at very different power levels: a 100 kW auxiliary railway power supply and a multiple output 33.5 W power supply intended for a space application. The gains in terms of power losses and mass from one technology to the other can advantageously be evaluated thanks to the developed tool

A Viable Residential DC Microgrid for Low Income Communities – Architecture, Protection and Education

The availability of fossil fuels in the future and the environmental effects such as the carbon footprint of the existing methodologies to produce electricity is an increasing area of concern. In rural areas of under-developed parts of the world, the problem is lack of access to electrification. DC microgrids have become a proven solution to electrification in these areas with demonstrated exceptional quality of power, high reliability, efficiency, and simplified integration between renewable energy sources (principally solar PV) and energy storage. In the United States, a different problem occurs that can be addressed with the same DC microgrid approach that is finding success internationally. In disinvested, underserved communities with high unemployment and low wages, households contribute a significant portion of their income towards the fixed cost of their electrical utility connection, which by law must be supplied to every household. In order to realize such a microgrid in these communities, there are three major areas which need to be accounted for. Firstly, there needs to be a custom architecture for the community under consideration and it needs to be economical to match the needs of the underserved community. Secondly, DC microgrid for home energy interconnection is potentially less complex and less expensive to deploy, operate and maintain however, faster protection is a key element to ensuring resilience, viability and adoptability. Lastly, these types of efforts will be sustainable only if the people in the community are educated and invested in the same as they are the key stakeholders in these systems. This dissertation presents an approach to make the DC Microgrid economically feasible for low income households by reducing the cost they incur on electric bills. The approach is to overlay a DC system into homes that have a utility feed in order to incorporate renewable energy usage into an urban setting for the express purpose of driving down individual household utility costs. The results show that the incorporation of a certain level of “smart” appliances and fixtures into the renovation of vacated homes and the use of a microgrid to enable sharing of renewable energy, such as solar power combined with energy storage, between homes in the proposed architecture yields the least expensive option for the patrons. The development of solid state circuit breakers that interface between the microgrid and the home DC power panels helps in faster protection of the DC system. In this dissertation, a SiC JFET based device is designed and built to protect against DC faults at a faster rate than the available solutions. The prototype is tested for verification and used to discriminate against short circuit faults and the results show the successful fault discrimination capabilities of the device. A basic system level simulation with the protection device is implemented using Real Time Hardware in the loop platform. Finally, as a part of engaging the community members, the high school kids in the area who might potentially be living in some of the houses in this community are being educated about the microgrid, appliances and other technologies to get a better understanding of STEM and hopefully inspiring them to pursue a career in STEM in the future

A Viable Residential DC Microgrid for Low Income Communities – Architecture, Protection and Education

The availability of fossil fuels in the future and the environmental effects such as the carbon footprint of the existing methodologies to produce electricity is an increasing area of concern. In rural areas of under-developed parts of the world, the problem is lack of access to electrification. DC microgrids have become a proven solution to electrification in these areas with demonstrated exceptional quality of power, high reliability, efficiency, and simplified integration between renewable energy sources (principally solar PV) and energy storage. In the United States, a different problem occurs that can be addressed with the same DC microgrid approach that is finding success internationally. In disinvested, underserved communities with high unemployment and low wages, households contribute a significant portion of their income towards the fixed cost of their electrical utility connection, which by law must be supplied to every household. In order to realize such a microgrid in these communities, there are three major areas which need to be accounted for. Firstly, there needs to be a custom architecture for the community under consideration and it needs to be economical to match the needs of the underserved community. Secondly, DC microgrid for home energy interconnection is potentially less complex and less expensive to deploy, operate and maintain however, faster protection is a key element to ensuring resilience, viability and adoptability. Lastly, these types of efforts will be sustainable only if the people in the community are educated and invested in the same as they are the key stakeholders in these systems. This dissertation presents an approach to make the DC Microgrid economically feasible for low income households by reducing the cost they incur on electric bills. The approach is to overlay a DC system into homes that have a utility feed in order to incorporate renewable energy usage into an urban setting for the express purpose of driving down individual household utility costs. The results show that the incorporation of a certain level of “smart” appliances and fixtures into the renovation of vacated homes and the use of a microgrid to enable sharing of renewable energy, such as solar power combined with energy storage, between homes in the proposed architecture yields the least expensive option for the patrons. The development of solid state circuit breakers that interface between the microgrid and the home DC power panels helps in faster protection of the DC system. In this dissertation, a SiC JFET based device is designed and built to protect against DC faults at a faster rate than the available solutions. The prototype is tested for verification and used to discriminate against short circuit faults and the results show the successful fault discrimination capabilities of the device. A basic system level simulation with the protection device is implemented using Real Time Hardware in the loop platform. Finally, as a part of engaging the community members, the high school kids in the area who might potentially be living in some of the houses in this community are being educated about the microgrid, appliances and other technologies to get a better understanding of STEM and hopefully inspiring them to pursue a career in STEM in the future

Special Power Electronics Converters and Machine Drives with Wide Band-Gap Devices

Power electronic converters play a key role in power generation, storage, and consumption. The major portion of power losses in the converters is dissipated in the semiconductor switching devices. In recent years, new power semiconductors based on wide band-gap (WBG) devices have been increasingly developed and employed in terms of promising merits including the lower on-state resistance, lower turn-on/off energy, higher capable switching frequency, higher temperature tolerance than conventional Si devices. However, WBG devices also brought new challenges including lower fault tolerance, higher system cost, gate driver challenges, and high dv/dt and resulting increased bearing current in electric machines. This work first proposed a hybrid Si IGBTs + SiC MOSFETs five-level transistor clamped H-bridge (TCHB) inverter which required significantly fewer number of semiconductor switches and fewer isolated DC sources than the conventional cascaded H-bridge inverter. As a result, system cost was largely reduced considering the high price of WBG devices in the present market. The semiconductor switches operated at carrier frequency were configured as Silicon Carbide (SiC) devices to improve the inverter efficiency, while the switches operated at fundamental output frequency (i.e., grid frequency) were constituted by Silicon (Si) IGBT devices. Different modulation strategies and control methods were developed and compared. In other words, this proposed SiC+Si hybrid TCHB inverter provided a solution to ride through a load short-circuit fault. Another special power electronic, multiport converter, was designed for EV charging station integrated with PV power generation and battery energy storage system. The control scheme for different charging modes was carefully developed to improve stabilization including power gap balancing, peak shaving, and valley filling, and voltage sag compensation. As a result, the influence on the power grid was reduced due to the matching between daily charging demand and adequate daytime PV generation. For special machine drives, such as slotless and coreless machines with low inductance, low core losses, typical drive implementations using conventional silicon-based devices are performance limited and also produce large current and torque ripples. In this research, WBG devices were employed to increase inverter switching frequency, reduce current ripple, reduce filter size, and as a result reduce drive system cost. Two inverter drive configurations were proposed and implemented with WBG devices in order to mitigate such issues for 2-phase very low inductance machines. Two inverter topologies, i.e., a dual H-bridge inverter with maximum redundancy and survivability and a 3-leg inverter for reduced cost, were considered. Simulation and experimental results validated the drive configurations in this dissertation. An integrated AC/AC converter was developed for 2-phase motor drives. Additionally, the proposed integrated AC/AC converter was systematically compared with commonly used topologies including AC/DC/AC converter and matrix converters, in terms of the output voltage/current capability, total harmonics distortion (THD), and system cost. Furthermore, closed-loop speed controllers were developed for the three topologies, and the maximum operating range and output phase currents were investigated. The proposed integrated AC/AC converter with a single-phase input and a 2-phase output reduced the switch count to six and resulting in minimized system cost and size for low power applications. In contrast, AC/DC/AC pulse width modulation (PWM) converters contained twelve active power semiconductor switches and a common DC link. Furthermore, a modulation scheme and filters for the proposed converter were developed and modeled in detail. For the significantly increased bearing current caused by the transition from Si devices to WBG devices, advanced modeling and analysis approach was proposed by using coupled field-circuit electromagnetic finite element analysis (FEA) to model bearing voltage and current in electric machines, which took into account the influence of distributed winding conductors and frequency-dependent winding RL parameters. Possible bearing current issues in axial-flux machines, and possibilities of computation time reduction, were also discussed. Two experimental validation approaches were proposed: the time-domain analysis approach to accurately capture the time transient, the stationary testing approach to measure bearing capacitance without complex control development or loading condition limitations. In addition, two types of motors were employed for experimental validation: an inside-out N-type PMSM was used for rotating testing and stationary testing, and an N-type BLDC was used for stationary testing. Possible solutions for the increased CMV and bearing currents caused by the implementation of WGB devices were discussed and developed in simulation validation, including multi-carrier SPWM modulation and H-8 converter topology

High-efficiency voltage source converters with silicon super-junction MOSFETs

High-efficiency power converters have the benefits of minimising energy consumption, reducing costs, and realising high power densities. The silicon super-junction (SJ) MOSFET is an attractive device for high-efficiency applications. However, its highly non-linear output capacitance and the reverse recovery properties of its intrinsic diode must be addressed when used in voltage source converters (VSCs). The research in this thesis aims at addressing these two problems and realising high efficiency. Initially, state-of-art techniques in the literature are reviewed. In order to develop a solution with simple hardware, no major auxiliary magnetic components, and no onerous timing requirements, a dual-mode switching technique is proposed. The technique is demonstrated using a SJ MOSFET based bridge-leg circuit. The hardware performance is then experimentally investigated with different power semiconductor device permutations. The transition conditions between the two switching modes do not have to be tightly set in order to maintain a high efficiency. The dual-mode switching technique is then further investigated with a current transformer (CT) arrangement embedded in the MOSFET’s gate driver circuit in order to control the profile of the MOSFET’s incoming drain current at turn on. The dual-mode switching technique, with or without a CT scheme, is shown to achieve high efficiency with minimal additional hardware.High-efficiency power converters have the benefits of minimising energy consumption, reducing costs, and realising high power densities. The silicon super-junction (SJ) MOSFET is an attractive device for high-efficiency applications. However, its highly non-linear output capacitance and the reverse recovery properties of its intrinsic diode must be addressed when used in voltage source converters (VSCs). The research in this thesis aims at addressing these two problems and realising high efficiency. Initially, state-of-art techniques in the literature are reviewed. In order to develop a solution with simple hardware, no major auxiliary magnetic components, and no onerous timing requirements, a dual-mode switching technique is proposed. The technique is demonstrated using a SJ MOSFET based bridge-leg circuit. The hardware performance is then experimentally investigated with different power semiconductor device permutations. The transition conditions between the two switching modes do not have to be tightly set in order to maintain a high efficiency. The dual-mode switching technique is then further investigated with a current transformer (CT) arrangement embedded in the MOSFET’s gate driver circuit in order to control the profile of the MOSFET’s incoming drain current at turn on. The dual-mode switching technique, with or without a CT scheme, is shown to achieve high efficiency with minimal additional hardware

Design and Control of Power Converters 2020

In this book, nine papers focusing on different fields of power electronics are gathered, all of which are in line with the present trends in research and industry. Given the generality of the Special Issue, the covered topics range from electrothermal models and losses models in semiconductors and magnetics to converters used in high-power applications. In this last case, the papers address specific problems such as the distortion due to zero-current detection or fault investigation using the fast Fourier transform, all being focused on analyzing the topologies of high-power high-density applications, such as the dual active bridge or the H-bridge multilevel inverter. All the papers provide enough insight in the analyzed issues to be used as the starting point of any research. Experimental or simulation results are presented to validate and help with the understanding of the proposed ideas. To summarize, this book will help the reader to solve specific problems in industrial equipment or to increase their knowledge in specific fields