Analysis and design of wideband voltage controlled oscillators using self-oscillating active inductors.

Voltage controlled oscillators (VCOs) are essential components of RF circuits used in transmitters and receivers as sources of carrier waves with variable frequencies. This, together with a rapid development of microelectronic circuits, led to an extensive research on integrated implementations of the oscillator circuits. One of the known approaches to oscillator design employs resonators with active inductors electronic circuits simulating the behavior of passive inductors using only transistors and capacitors. Such resonators occupy only a fraction of the silicon area necessary for a passive inductor, and thus allow to use chip area more eectively. The downsides of the active inductor approach include: power consumption and noise introduced by transistors. This thesis presents a new approach to active inductor oscillator design using selfoscillating active inductor circuits. The instability necessary to start oscillations is provided by the use of a passive RC network rather than a power consuming external circuit employed in the standard oscillator approach. As a result, total power consumption of the oscillator is improved. Although, some of the active inductors with RC circuits has been reported in the literature, there has been no attempt to utilise this technique in wideband voltage controlled oscillator design. For this reason, the dissertation presents a thorough investigation of self-oscillating active inductor circuits, providing a new set of design rules and related trade-os. This includes: a complete small signal model of the oscillator, sensitivity analysis, large signal behavior of the circuit and phase noise model. The presented theory is conrmed by extensive simulations of wideband CMOS VCO circuit for various temperatures and process variations. The obtained results prove that active inductor oscillator performance is obtained without the use of standard active compensation circuits. Finally, the concept of self-oscillating active inductor has been employed to simple and fast OOK (On-Off Keying) transmitter showing energy eciency comparable to the state of the art implementations reported in the literature

Ultra-low power RF receiver based on double-gate CMOS FinFET technology

In this research, design approaches and methodologies were presented to realize the ultra-low power RF receiver front-end circuits. Moderate inversion operation was explored as a possible method of reducing power consumption along with the use of low supply voltage. The research is firstly concentrated on passive and active devices modeling. One of the most commonly used passive devices is on-chip inductor. On-chip spiral inductor model was developed firstly. Compared to the model developed by others, this model can predict the behavior of the inductors with different structural parameters over a board frequency range (from 0.1 to 10 GHz). Then the SOI varactor model was developed based on our measurement and extraction.Besides the passive devices modeling, a new most promising MOSFET candidate, FinFET, was characterized at GHz frequency range. Based on the measurement results, we found the FinFET transistors did have superior performance over bulk-Si CMOS technology. And an RF circuit model of FinFET was developed followed that, which was published in Electronics Letters. To my best knowledge, this was the first RF FinFET model published world wide at that time. It provides the basic idea about how to model this new structure MOSFET.Based on the passive and active device models developed, Global Positioning System (GPS) receiver front end circuits were designed and measured. Comparing to the previous designs with the same constrains, the ultra-low power GPS receiver building block circuits in this research have much less power consumption than the best design published before

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

By the continuing downscaling of sub-micron transistors in the range of few to one deca-nanometers, we focus on the increasing relative level of the low-frequency noise in these devices. Large amount of published data and models are reviewed and summarized, in order to capture the state-of-the-art, and to observe that the 1/area scaling of low-frequency noise holds even for carbon nanotube devices, but the noise becomes too large in order to have fully deterministic devices with area less than 10nm×10nm. The low-frequency noise models are discussed from the point of view that the noise can be both intrinsic and coupled to the charge transport in the devices, which provided a coherent picture, and more interestingly, showed that the models converge each to other, despite the many issues that one can find for the physical origin of each model. Several derivations are made to explain crossovers in noise spectra, variable random telegraph amplitudes, duality between energy and distance of charge traps, behaviors and trends for figures of merit by device downscaling, practical constraints for micropower amplifiers and dependence of phase noise on the harmonics in the oscillation signal, uncertainty and techniques of averaging by noise characterization. We have also shown how the unavoidable statistical variations by fabrication is embedded in the devices as a spatial “frozen noise”, which also follows 1/area scaling law and limits the production yield, from one side, and from other side, the “frozen noise” contributes generically to temporal 1/f noise by randomly probing the embedded variations during device operation, owing to the purely statistical accumulation of variance that follows from cause-consequence principle, and irrespectively of the actual physical process. The accumulation of variance is known as statistics of “innovation variance”, which explains the nearly log-normal distributions in the values for low-frequency noise parameters gathered from different devices, bias and other conditions, thus, the origin of geometric averaging in low-frequency noise characterizations. At present, the many models generally coincide each with other, and what makes the difference, are the values, which, however, scatter prominently in nanodevices. Perhaps, one should make some changes in the approach to the low-frequency noise in electronic devices, to emphasize the “statistics behind the numbers”, because the general physical assumptions in each model always fail at some point by the device downscaling, but irrespectively of that, the statistics works, since the low-frequency noise scales consistently with the 1/area law

Comparative analysis of differential colpitts and cross-coupled VCOs in 180 nm Si-Ge HBT technology

It has been shown in the literature that a cross-coupled CMOS LC VCO will outperform an equivalent Colpitts VCO. In the case of bipolar devices, the jury is still out. This paper reports a comparative analysis of phase noise (PN), tuning range (TR), dissipated DC power and Figure of Merit (FoM) in cross-coupled and differential Colpitts LC VCOs topologies designed in 180 nm Si-Ge HBT technology for operation around 5 GHz. SpectreRF simulations show that the cross-coupled topology exhibits a minimum PN equal to -108 dBc/Hz, a tuning range of 17.5% and a dissipated DC power of 12.6 mW, with a FoM equal to 204 dB, while the Colpitts topology exhibits a minimum PN over the tuning range equal to -113 dBc/Hz, a tuning range of 21.6% and a dissipated DC power of 14.1 mW, with a FoM equal to 212 dB. This suggests that, for the considered technology, the differential Colpitts can exhibit better overall performance than the cross-coupled VCO