63 research outputs found
Improved arrayed-waveguide-grating layout avoiding systematic phase errors
We present a detailed description of an improved arrayed-waveguide-grating (AWG) layout for both, low and high diffraction orders. The novel layout presents identical bends across the entire array; in this way systematic phase errors arising from different bends that are inherent to conventional AWG designs are completely eliminated. In addition, for high-order AWGs our design results in more than 50% reduction of the occupied area on the wafer. We present an experimental characterization of a low-order device fabricated according to this geometry. The device has a resolution of 5.5 nm, low intrinsic losses (< 2 dB) in the wavelength region of interest for the application, and is polarization insensitive over a wide spectral range of 215 nm
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High-brightness lasers with spectral beam combining on silicon
Modern implementations of absorption spectroscopy and infrared-countermeasures demand advanced performance and integration of high-brightness lasers, especially in the molecular fingerprint spectral region. These applications, along with others in communication, remote-sensing, and medicine, benefit from the light source comprising a multitude of frequencies. To realize this technology, a single multi-spectral optical beam of near-diffraction-limited divergence is created by combining the outputs from an array of laser sources. Full integration of such a laser is possible with direct bonding of several epitaxially-grown chips to a single silicon (Si) substrate. In this platform, an array of lasers is defined with each gain material, creating a densely spaced set of wavelengths similar to wavelength division multiplexing used in communications.Scaling the brightness of a laser typically involves increasing the active volume to produce more output power. In the direction transverse to the light propagation, larger geometries compromise the beam quality. Lengthening the cavity provides only limited scaling of the output power due to the internal losses. Individual integrated lasers have low brightness due to combination of thermal effects and high optical intensities. With heterogeneous integration, many lasers can be spectrally combined on a single integrated chip to scale brightness in a compact platform. Recent demonstrations of 2.0-µm diode and 4.8-µm quantum cascade lasers on Si have extended this heterogeneous platform beyond the telecommunications band to the mid-infrared.In this work, low-loss beam combining elements spanning the visible to the mid-infrared are developed and a high-brightness multi-spectral laser is demonstrated in the range of 4.6–4.7-µm wavelengths. An architecture is presented where light is combined in multiple stages: first within the gain-bandwidth of each laser material and then coarsely between each spectral band to a single output waveguide. All components are demonstrated on a common material platform with a Si substrate, which lends feasibility to the complete system integration. Particular attention is focused on improving the efficiency of arrayed waveguide gratings (AWGs), used in the dense wavelength combining stage. This requires development of a refined characterization technique involving AWGs in a ring-resonator configuration to reduce measurement uncertainty. New levels of low-loss are achieved for visible, near-infrared, and mid-infrared multiplexing devices. Also, a multi-spectral laser in the mid-infrared is demonstrated by integrating an array of quantum cascade lasers and an AWG with Si waveguides. The output power and spectra are measured, demonstrating efficient beam combining and power scaling. Thus, a bright laser source in the mid-infrared has been demonstrated, along with an architecture and the components for incorporating visible and near-infrared optical bands
Ultra-Narrow Bandwidth Optical Resonators for Integrated Low Frequency Noise Lasers
The development of narrowband resonators has far reaching applications in integrated optics. As a precise reference of wavelength, filters can be used in sensors, metrology, nonlinear optics, microwave photonics, and laser stabilization. In this work, we develop record high quality factor (Q) Si3N4 waveguide resonators, and utilize them to stabilize a heterogeneously integrated Si/III V laser. To increase the Q factor of waveguide resonators, particular attention is given to loss mechanisms. Propagation loss of <0.1 dB/m is demonstrated on the ultra low loss waveguide platform, a low index contrast, high aspect ratio Si3N4 waveguide geometry fabricated with high quality materials and high temperature anneals. Ideality in the directional couplers used for coupling to the resonators is studied and losses are reduced such that 81 million intrinsic Q factor is achieved. Additional results include 1×16 resonant splitters, low κ narrowband gratings, and a dual layer waveguide technology for low loss and low bend radius in separate regions of the same device layer. We then combine an ultra high Q resonator and a heterogeneous Si/III V laser in a Pound Drever Hall (PDH) frequency stabilization system to yield narrow linewidth characteristics for a stable on chip laser reference. The high frequency noise filtering is performed with Si resonant mirrors in the laser cavity. A 30 million Q factor Si3N4 resonator is used with electrical feedback to reduce close in noise and frequency walk off. The laser shows high frequency noise levels of 60×10^3 Hz^2/Hz corresponding to 160 kHz linewidth, and the low frequency noise is suppressed 33 dB to 10^3 Hz^2/Hz with the PDH system
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