Hybrid Piezoelectric-Magnetic Neurons: A Proposal for Energy-Efficient Machine Learning

This paper proposes a spintronic neuron structure composed of a heterostructure of magnets and a piezoelectric with a magnetic tunnel junction (MTJ). The operation of the device is simulated using SPICE models. Simulation results illustrate that the energy dissipation of the proposed neuron compared to that of other spintronic neurons exhibits 70% improvement. Compared to CMOS neurons, the proposed neuron occupies a smaller footprint area and operates using less energy. Owing to its versatility and low-energy operation, the proposed neuron is a promising candidate to be adopted in artificial neural network (ANN) systems.Comment: Submitted to: ACM Southeast '1

Energy Efficient Spintronic Device for Neuromorphic Computation

Future computing will require significant development in new computing device paradigms. This is motivated by CMOS devices reaching their technological limits, the need for non-Von Neumann architectures as well as the energy constraints of wearable technologies and embedded processors. The first device proposal, an energy-efficient voltage-controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction (DMI), different positions of the domain wall are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. Additionally, an artificial neuron can be realized by combining this DW device with a CMOS buffer. The second neuromorphic device proposal is inspired by the brain. Membrane potential of many neurons oscillate in a subthreshold damped fashion and fire when excited by an input frequency that nearly equals their Eigen frequency. We investigate theoretical implementation of such “resonate-and-fire” neurons by utilizing the magnetization dynamics of a fixed magnetic skyrmion based free layer of a magnetic tunnel junction (MTJ). Voltage control of magnetic anisotropy or voltage generated strain results in expansion and shrinking of a skyrmion core that mimics the subthreshold oscillation. Finally, we show that such resonate and fire neurons have potential application in coupled nanomagnetic oscillator based associative memory arrays

Modeling and design for energy-efficient spintronic logic devices and circuits

The objective of the proposed research is the modeling and the design of energy-efficient and scalable novel spintronic devices. Over the past two decades, spintronic devices have achieved special status due to their advantages in terms of low-voltage operation, smaller footprint area, non-volatile memory, and compatibility with CMOS technology. To design efficient spin-based systems, researchers require the precise modeling of the physics of nanomagnets, piezoelectrics, thermal noise, and metallic nanowires. Using the models developed during the research, spintronic logic devices comprised of hybrid magnetic and piezoelectric structures are proposed. The delay, energy dissipation, and footprint area of the proposed devices are analyzed. Moreover, the proposed devices are used as building blocks to propose spin-based logic gates, pattern and image recognition circuits, long-range interconnects, interface circuits, and coupled-oscillators. The performance of the proposed circuits is benchmarked against CMOS and other spin-based circuits, which shows improved performance, especially in implementing non-Boolean applications and interface circuits.Ph.D

COHERENT/INCOHERENT MAGNETIZATION DYNAMICS OF NANOMAGNETIC DEVICES FOR ULTRA-LOW ENERGY COMPUTING

Nanomagnetic computing devices are inherently nonvolatile and show unique transfer characteristics while their switching energy requirements are on par, if not better than state of the art CMOS based devices. These characteristics make them very attractive for both Boolean and non-Boolean computing applications. Among different strategies employed to switch nanomagnetic computing devices e.g. magnetic field, spin transfer torque, spin orbit torque etc., strain induced switching has been shown to be among the most energy efficient. Strain switched nanomagnetic devices are also amenable for non-Boolean computing applications. Such strain mediated magnetization switching, termed here as “Straintronics”, is implemented by switching the magnetization of the magnetic layer of a magnetostrictive-piezoelectric nanoscale heterostructure by applying an electric field in the underlying piezoelectric layer. The modes of “straintronic” switching: coherent vs. incoherent switching of spins can affect device performance such as speed, energy dissipation and switching error in such devices. There was relatively little research performed on understanding the switching mechanism (coherent vs. incoherent) in xiv straintronic devices and their adaptation for non-Boolean computing, both of which have been studied in this thesis. Detailed studies of the effects of nanomagnet geometry and size on the coherence of the switching process and ultimately device performance of such strain switched nanomagnetic devices have been performed. These studies also contributed in optimizing designs for low energy, low dynamic error operation of straintronic logic devices and identified avenues for further research. A Novel non-Boolean “straintronic” computing device (Ternary Content Addressable Memory, abbreviated as TCAM) has been proposed and evaluated through numerical simulations. This device showed significant improvement over existing CMOS device based TCAM implementation in terms of scaling, energy-delay product, operational simplicity etc. The experimental part of this thesis answered a very fundamental question in strain induced magnetization rotation. Specifically, this experiment studied the variation in magnetization orientation for strain induced magnetization rotation along the thickness of a magnetostrictive thin film using polarized neutron reflectometry and demonstrated non-uniform magnetization rotation along the thickness of the sample. Additional experimental work was performed to lay the groundwork for ultra-low voltage straintronic switching demonstration. Preliminary sample fabrication and characterization that can potentially lead to low voltage (~10-100 mV) operation and local clocking of such devices has been performed

ULTRA–LOW POWER STRAINTRONIC NANOMAGNETIC COMPUTING WITH SAW WAVES: AN EXPERIMENTAL STUDY OF SAW INDUCED MAGNETIZATION SWITCHING AND PROPERTIES OF MAGNETIC NANOSTRUCTURES

A recent International Technology Roadmap for Semiconductors (ITRS) report (2.0, 2015 edition) has shown that Moore’s law is unlikely to hold beyond 2028. There is a need for alternate devices to replace CMOS based devices, if further miniaturization and high energy efficiency is desired. The goal of this dissertation is to experimentally demonstrate the feasibility of nanomagnetic memory and logic devices that can be clocked with acoustic waves in an extremely energy efficient manner. While clocking nanomagnetic logic by stressing the magnetostrictive layer of a multiferroic logic element with with an electric field applied across the piezoelectric layer is known to be an extremely energy-efficient clocking scheme, stressing every nanomagnet separately requires individual contacts to each one of them that would necessitate cumbersome lithography. On the other hand, if all nanomagnets are stressed simultaneously with a global voltage, it will eliminate the need for individual contacts, but such a global clock makes the architecture non-pipelined (the next input bit cannot be written till the previous bit has completely propagated through the chain) and therefore, unacceptably slow and error prone. Use of global acoustic wave, that has in-built granularity, would offer the best of both worlds. As the crest and the trough propagate in space with a velocity, nanomagnets that find themselves at a crest are stressed in tension while those in the trough are compressed. All other magnets are relaxed (no stress). Thus, all magnets are not stressed simultaneously but are clocked in a sequentially manner, even though the clocking agent is global. Finally, the acoustic wave energy is distributed over billions of nanomagnets it clocks, which results in an extremely small energy cost per bit per nanomagnet. In summary, acoustic clocking of nanomagnets can lead to extremely energy efficient nanomagnetic computing devices while also eliminating the need for complex lithography. The dissertation work focuses on the following two topics: Acoustic Waves, generated by IDTs fabricated on a piezoelectric lithium niobate substrate, can be utilized to manipulate the magnetization states in elliptical Co nanomagnets. The magnetization switches from its initial single-domain state to a vortex state after SAW stress cycles propagate through the nanomagnets. The vortex states are stable and the magnetization remains in this state until it is ‘reset’ by an external magnetic field. 2. Acoustic Waves can also be utilized to induce 1800 magnetization switching in dipole coupled elliptical Co nanomagnets. The magnetization switches from its initial single-domain ‘up’ state to a single-domain ‘down’ state after SAW tensile/compressive stress cycles propagate through the nanomagnets. The switched state is stable and non-volatile. These results show the effective implementation of a Boolean NOT gate. Ultimately, the advantage of this technology is that it could also perform higher order information processing (not discussed here) while consuming extremely low power. Finally, while we have demonstrated acoustically clocked nanomagnetic memory and logic schemes with Co nanomagnets, materials with higher magnetostriction (such as FeGa) may ultimately improve the switching reliability of such devices. With this in mind we prepared and studied FeGa films using a ferromagnetic resonance (FMR) technique to extract properties of importance to magnetization dynamics in such materials that could have higher magneto elastic coupling than either Co or Ni

High Frequency Multiferroic Devices

This dissertation focuses on high frequency multiferroic devices from both theoretical and experimental aspects. Some potential applications for high frequency multiferroic: antennas, logic and memory, will be presented in this dissertation. The introduction section provides a fundamental explanation on the multiferroic devices as well as the modeling methods for strain-mediated multiferroic systems. Former researches indicate that the composites of piezoelectric substrate and the magnetoelastic material show great potential on reducing both the devices’ size as well as energy consumption.Part I of the dissertation shows multiferroics for antenna applications. Conventionally, antennas such as dipoles and loops rely on an electromagnetic (EM) wave resonance. Therefore, the sizes of such antennas are within the same order of free space wavelength. Multiferroic antenna can transfer the EM wave into an acoustic wave, which has much smaller wavelength compared with the wavelength of the EM wave under the same frequency. In this way, multiferroic antennas show a promising path for reducing the antenna system’s size, weight and volume. Also, three multiferroic antennas: shear wave antenna, lamb wave antenna as well as tunable frequency broadband antenna are introduced in this section. The shear wave antenna and lamb wave antenna are studied experimentally, and the tunable frequency broadband antenna is studied theoretically. All of them show great potential on reducing the antenna’s size.Part II of this dissertation indicates other applications of multiferroic devices: logic and memory. For the logic aspects, a numerical simulation is performed on in-plane mode Bennett clocking systems. For memory aspects, a new concept for breaking the switch symmetry the high frequency control of the magnetization in nanodisk. In this part, a fully coupled finite element model is used to simulate the switch process of the magnetization in the nanodisks. This voltage-controlled process has potential be used in magnetic memory devices with very low energy dissipations