Pseudo-three-stage Miller op-amp with enhanced small-signal and large-signal performance

A simple technique to implement highly power efficient class AB-AB Miller op-amps is presented in this paper. It uses a composite input stage with resistive local common mode feedback that provides class AB operation to the input stage and essentially enhances the op-amp's effective transconductance gain, the dc open-loop gain, the gain-bandwidth product, and slew rate with just moderate increase in power dissipation. The experimental results of op-amps in strong inversion and subthreshold fabricated in a 130-nm standard CMOS technology validate the proposed approach. The op-amp has 9 V·pF/μs·μW large-signal figure of merit (FOM) and 17 MHz · pF/μW small-signal FOM with 1.2-V supply voltage. In subthreshold, the op-amp has 10 V · pF/μs · μW large-signal FOM and 92 MHz · pF/μW small-signal FOM with 0.5-V supply voltage.This work was supported by Grant TEC2016-80396- C2-R (AEI/FEDER)

Super-gain-boosted AB-AB fully differential Miller op-amp with 156dB open-loop gain and 174MV/V MHZ pF/uW figure of merit in 130nm CMOS technology

A fully differential Miller op-amp with a composite input stage using resistive local common-mode feedback and regulated cascode transistors is presented here. High gain pseudo-differential auxiliary amplifiers are used to implement the regulated cascode transistors in order to boost the output impedance of the composite input stage and the open-loop gain of the op-amp. Both input and output stages operate in class AB mode. The proposed op-amp has been simulated in a 130nm commercial CMOS process technology. It operates from a 1.2V supply and has a close to rail-to-rail differential output swing. It has 156dB DC open-loop gain and 63MHz gain-bandwidth product with a 30pF capacitive load. The op-amp has a DC open-loop gain figure of merit FOMAOLDC of 174 (MV/V) MHz pF/uW and large-signal figure of merit FOMLS of 3(V/us) pF/uW.This work was supported in part by the Spanish Government Agencia Estatal de Investigación (AEI) under Grant TEC2016-80396-C2, in part by the Consejería de Economía y Conocimiento of Junta de Andalucía under Grant P18-FR-4317 (both projects received support from the Fondo Europeo de Desarrollo Regional (FEDER)), and in part by the Consejo Nacional de Ciencia y Tecnologia (CONACyT) under Grant A1-S-43214

Energy-efficient amplifiers based on quasi-floating gate techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage ultra low power amplifiers can be designed preserving at the same time excellent small-signal and large-signal performance.This research was funded by AEI/FEDER, grant number PID2019-107258RB-C32

Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage, energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example, including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage, ultra-low-power amplifiers can be designed, preserving, at the same time, excellent small-signal and large-signal performance.Agencia Estatal de Investigación PID2019-107258RB-C32Unión Europea PID2019-107258RB-C3

Super-Gain-Boosted AB-AB Fully Differential Miller Op-Amp With 156dB Open-Loop Gain and 174MV/V MHZ pF/µW Figure of Merit in 130nm CMOS Technology

Article number 9400400A fully differential Miller op-amp with a composite input stage using resistive local common-mode feedback and regulated cascode transistors is presented here. High gain pseudo-differential auxiliary amplifiers are used to implement the regulated cascode transistors in order to boost the output impedance of the composite input stage and the open-loop gain of the op-amp. Both input and output stages operate in class AB mode. The proposed op-amp has been simulated in a 130nm commercial CMOS process technology. It operates from a 1.2V supply and has a close to rail-to-rail differential output swing. It has 156dB DC open-loop gain and 63MHz gain-bandwidth product with a 30pF capacitive load. The op-amp has a DC open-loop gain figure of merit FOMAOLDC of 174 (MV/V) MHz pF/µW and large-signal figure of merit FOMLS of 3(V/µs) pF/µW.Consejería de Economía y Conocimiento of Junta de Andalucía P18-FR-4317Consejo Nacional de Ciencia y Tecnología (España) A1-S-43214Agencia Estatal de Investigación TEC2016-80396-C

Design methodology for general enhancement of a single-stage self-compensated folded-cascode operational transconductance amplifiers in 65 nm CMOS process

The problems resulting from the use of nano-MOSFETs in the design of operational trans-conductance amplifiers (OTAs) lead to an urgent need for new design techniques to produce high-performance metrics OTAs suitable for very high-frequency applications. In this paper, the enhancement techniques and design equations for the proposed single-stage folded-cascode operational trans-conductance amplifiers (FCOTA) are presented for the enhancement of its various performance metrics. The proposed single-stage FCOTA adopts the folded-cascode (FC) current sources with cascode current mirrors (CCMs) load. Using 65 nm complementary metal-oxide semiconductor (CMOS) process from predictive technology model (PTM), the HSPICE2019-based simulation results show that the designed single-stage FCOTA can achieve a high open-loop differential-mode DC voltage gain of 65.64 dB, very high unity-gain bandwidth of 263 MHz, very high stability with phase-margin of 73°, low power dissipation of 0.97 mW, very low DC input-offset voltage of 0.14 uV, high swing-output voltages from −0.97 to 0.91 V, very low equivalent input-referred noise of 15.8 nV/Hz, very high common-mode rejection ratio of 190.64 dB, very high positive/negative slew-rates of 157.5/58.3 V⁄us, very fast settling-time of 5.1 ns, high extension input common-mode range voltages from −0.44to 1 V, and high positive/negative power-supply rejection ratios of 75.5/68.8 dB. The values of the small/large-signal figures-of-merits (s) are the highest when compared to other reported FCOTAs in the literature

High Slew-Rate Adaptive Biasing Hybrid Envelope Tracking Supply Modulator for LTE Applications

abstract: As wireless communication enters smartphone era, more complicated communication technologies are being used to transmit higher data rate. Power amplifier (PA) has to work in back-off region, while this inevitably reduces battery life for cellphones. Various techniques have been reported to increase PA efficiency, such as envelope elimination and restoration (EER) and envelope tracking (ET). However, state of the art ET supply modulators failed to address high efficiency, high slew rate, and accurate tracking concurrently. In this dissertation, a linear-switch mode hybrid ET supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class-AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 V/µs to 93.4 V/µs and -87 V/µs to -152.5 V/µs respectively, dc gain from 45 dB to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power added efficiency (PAE) of 42.3% at 26.2 dBm for a 10 MHz 7.24 dB peak-to-average power ratio (PAPR) LTE signal and improves PAE by 8% at 6 dB back off from 26.2 dBm power amplifier (PA) output power with respect to fixed supply. With a 10 MHz 7.24 dB PAPR QPSK LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2 dBm PA output power, while with a 10 MHz 8.15 dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26 dBm PA output power without digital pre-distortion (DPD). The proposed supply modulator core circuit occupies 1.1 mm2 die area, and is fabricated in a 0.18 µm CMOS technology.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201