Low-power switched capacitor voltage reference

Low-power analog design represents a developing technological trend as it emerges from a rather limited range of applications to a much wider arena affecting mainstream market segments. It especially affects portable electronics with respect to battery life, performance, and physical size. Meanwhile, low-power analog design enables technologies such as sensor networks and RFID. Research opportunities abound to exploit the potential of low power analog design, apply low-power to established fields, and explore new applications. The goal of this effort is to design a low-power reference circuit that delivers an accurate reference with very minimal power consumption. The circuit and device level low-power design techniques are suitable for a wide range of applications. To meet this goal, switched capacitor bandgap architecture was chosen. It is the most suitable for developing a systematic, and groundup, low-power design approach. In addition, the low-power analog cell library developed would facilitate building a more complex low-power system. A low-power switched capacitor bandgap was designed, fabricated, and fully tested. The bandgap generates a stable 0.6-V reference voltage, in both the discrete-time and continuous-time domain. The system was thoroughly tested and individual building blocks were characterized. The reference voltage is temperature stable, with less than a 100 ppm/°C drift, over a --60 dB power supply rejection, and below a 1 [Mu]A total supply current (excluding optional track-and-hold). Besides using it as a voltage reference, potential applications are also described using derivatives of this switched capacitor bandgap, specifically supply supervisory and on-chip thermal regulation

SPICE²: A Spatial, Parallel Architecture for Accelerating the Spice Circuit Simulator

Spatial processing of sparse, irregular floating-point computation using a single FPGA enables up to an order of magnitude speedup (mean 2.8X speedup) over a conventional microprocessor for the SPICE circuit simulator. We deliver this speedup using a hybrid parallel architecture that spatially implements the heterogeneous forms of parallelism available in SPICE. We decompose SPICE into its three constituent phases: Model-Evaluation, Sparse Matrix-Solve, and Iteration Control and parallelize each phase independently. We exploit data-parallel device evaluations in the Model-Evaluation phase, sparse dataflow parallelism in the Sparse Matrix-Solve phase and compose the complete design in streaming fashion. We name our parallel architecture SPICE²: Spatial Processors Interconnected for Concurrent Execution for accelerating the SPICE circuit simulator. We program the parallel architecture with a high-level, domain-specific framework that identifies, exposes and exploits parallelism available in the SPICE circuit simulator. This design is optimized with an auto-tuner that can scale the design to use larger FPGA capacities without expert intervention and can even target other parallel architectures with the assistance of automated code-generation. This FPGA architecture is able to outperform conventional processors due to a combination of factors including high utilization of statically-scheduled resources, low-overhead dataflow scheduling of fine-grained tasks, and overlapped processing of the control algorithms. We demonstrate that we can independently accelerate Model-Evaluation by a mean factor of 6.5X(1.4--23X) across a range of non-linear device models and Matrix-Solve by 2.4X(0.6--13X) across various benchmark matrices while delivering a mean combined speedup of 2.8X(0.2--11X) for the two together when comparing a Xilinx Virtex-6 LX760 (40nm) with an Intel Core i7 965 (45nm). With our high-level framework, we can also accelerate Single-Precision Model-Evaluation on NVIDIA GPUs, ATI GPUs, IBM Cell, and Sun Niagara 2 architectures. We expect approaches based on exploiting spatial parallelism to become important as frequency scaling slows down and modern processing architectures turn to parallelism (\eg multi-core, GPUs) due to constraints of power consumption. This thesis shows how to express, exploit and optimize spatial parallelism for an important class of problems that are challenging to parallelize.</p

Journal of Microelectronic Research - May 2003

https://scholarworks.rit.edu/meec_archive/1012/thumbnail.jp

Impact of intrinsic parameter fluctuations in ultra-thin body silicon-on-insulator MOSFET on 6-transistor SRAM cell

As CMOS device dimensions are being aggressively scaled, the device characteristic must be assessed against fundamental physical limits. Nanoscale device modelling and statistical circuit analysis is needed to provide designer with ability to explore innovative new MOSFET devices as well as understanding the limits of the scaling process. This work introduces a systematic simulation methodology to investigate the impact of intrinsic parameter fluctuation for a novel Ultra-Thin-Body (UTB) Silicon-on-Insulator (SOI) transistor on the corresponding device and circuits. It provides essential link between physical device-level numerical simulation and circuit-level simulation. A systematic analysis of the effects of random discrete dopants, body thickness variations and line edge roughness on a well scaled 10 nm, 7.5 nm and 5 nm channel length UTB-SOI MOSFET is performed. To fully realise the performance benefits of UTB-SOI based SRAM cells a statistical circuit simulation methodology which can fully capture intrinsic parameter fluctuations information into the compact model is developed. The impact of intrinsic parameter fluctuations on the stability and performance of 6T SRAM has been investigated. A comparison with the behaviour of a 6T SRAM based on a conventional 35 nm MOSFET is also presented

Modeling and Simulation in Engineering

The general aim of this book is to present selected chapters of the following types: chapters with more focus on modeling with some necessary simulation details and chapters with less focus on modeling but with more simulation details. This book contains eleven chapters divided into two sections: Modeling in Continuum Mechanics and Modeling in Electronics and Engineering. We hope our book entitled "Modeling and Simulation in Engineering - Selected Problems" will serve as a useful reference to students, scientists, and engineers

Modeling the Impact of Process Variation on Resistive Bridge Defects

Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive bridges. This paper presents a fast and accurate technique to model the effect of process variation on resistive bridge defects. The proposed model is implemented in two stages: firstly, it employs an accurate transistor model (BSIM4) to calculate the critical resistance of a bridge; secondly, the effect of process variation is incorporated in this model by using three transistor parameters: gate length (L), threshold voltage (V) and effective mobility (ueff) where each follow Gaussian distribution. Experiments are conducted on a 65-nm gate library (for illustration purposes), and results show that on average the proposed modeling technique is more than 7 times faster and in the worst case, error in bridge critical resistance is 0.8% when compared with HSPICE

Compact Models for Integrated Circuit Design

This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts

Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs

With a unified physics-based model linking MOSFET performance to carrier mobility and drive current, it is shown that nearly continuous carrier mobility increase has been achieved by introduction of process-induced and global-induced strain, which has been responsible for increase in device performance commensurately with scaling. Strained silicon-germanium technology is a hot research area, explored by many different research groups for present and future CMOS technology, due to its high hole mobility and easy process integration with silicon. Several heterostructure architectures for strained Si/SiGe have been shown in the literature. A dual channel heterostructure consisting of strained Si/Si1-xGex on a relaxed SiGe buffer provides a platform for fabricating MOS transistors with high drive currents, resulting from high carrier mobility and carrier velocity, due to presence of compressively strained silicon germanium layer. This works reports the design, modeling and simulation of NMOS and PMOS transistors with a tensile strained Si channel layer and compressively strained SiGe channel layer for a 65 nm logic technology node. Since most of the recent work on development of strained Si/SiGe has been experimental in nature, developments of compact models are necessary to predict the device behavior. A unified modeling approach consisting of different physics-based models has been formulated in this work and their ability to predict the device behavior has been investigated. In addition to this, quantum mechanical simulations were performed in order to investigate and model the device behavior. High p/n-channel drive currents of 0.43 and 0.98 mA/Gm, respectively, are reported in this work. However with improved performance, ~ 10% electrostatic degradation was observed in PMOS due to buried channel device