Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling

We propose a parameterized macromodeling methodology to effectively and accurately carry out dynamic electrothermal (ET) simulations of electronic components and systems, while taking into account the influence of key design parameters on the system behavior. In order to improve the accuracy and to reduce the number of computationally expensive thermal simulations needed for the macromodel generation, a decomposition of the frequency-domain data samples of the thermal impedance matrix is proposed. The approach is applied to study the impact of layout variations on the dynamic ET behavior of a state-of-the-art 8-finger AlGaN/GaN high-electron mobility transistor grown on a SiC substrate. The simulation results confirm the high accuracy and computational gain obtained using parameterized macromodels instead of a standard method based on iterative complete numerical analysis

Analytic Modeling, Simulation and Interpretation of Broadband Beam Coupling Impedance Bench Measurements

In the first part of the paper a generalized theoretical approach towards beam coupling impedances and stretched-wire measurements is introduced. Applied to a circular symmetric setup, this approach allows to estimate the systematic measurement error due to the presence of the wire. Further, the interaction of the beam or the TEM wave, respectively, with dispersive material such as ferrite is discussed. The dependence of the obtained impedances on the relativistic velocity $\beta$ is investigated and found as material property dependent. The conversion formulas for the TEM scattering parameters from measurements to impedances are compared with each other and the analytical impedance solution. In the second part of the paper the measurements are compared to numerical simulations of wakefields and scattering parameters. In practice, the measurements have been performed for the circularly symmetric example setup. The optimization of the measurement process is discussed. The paper concludes with a summary of systematic and statistic error sources for impedance bench measurements and their diminishment strategy