3,393 research outputs found

    LIPIcs, Volume 251, ITCS 2023, Complete Volume

    Get PDF
    LIPIcs, Volume 251, ITCS 2023, Complete Volum

    Comparing the Performance of Different Machine Learning Models in the Evaluation of Solder Joint Fatigue Life Under Thermal Cycling

    Get PDF
    Predicting the reliability of board-level solder joints is a challenging process for the designer because the fatigue life of solder is influenced by a large variety of design parameters and many nonlinear, coupled phenomena. Machine learning has shown promise as a way of predicting the fatigue life of board-level solder joints. In the present work, the performance of various machine learning models to predict the fatigue life of board-level solder joints is discussed. Experimental data from many different solder joint thermal fatigue tests are used to train the different machine learning models. A web-based database for storing, sharing, and uploading data related to the performance of electronics materials, the Electronics Packaging Materials Database (EPMD), has been developed and used to store and serve the training data for the present work. Data regression is performed using artificial neural networks, random forests, gradient boosting, extreme gradient boosting (XGBoost), and adaptive boosting with neural networks (AdaBoost). While previous works have studied artificial neural networks as a way to predict the fatigue life of board-level solder joints, the results in this paper suggest that machine learning techniques based on regression trees may also be useful in predicting the fatigue life of board-level solder joints. This paper also demonstrates the need for a large collection of curated data related to board-level solder joint reliability, and presents the Electronics Packaging Materials Database to meet that need

    Luminescent Nanocrystals: Line broadening and formation mechanisms

    Get PDF
    Nanomaterials have become an increasingly important class of materials in the past decades due to their size-tunable optical, electronic, and magnetic properties. Nanomaterials are not only of great scientific interest, but their versatility has also resulted in a wide range of applica¬tions. This thesis focuses on two types of luminescent (light-emitting) nanomaterials, cadmium chalcogenide nanocrystals (NCs) and NaYF4 NCs doped with rare earth ions (lanthanides, e.g., erbium and ytterbium). Both the optical properties and nanocrystal growth mechanisms are investigated. Semiconductor NCs, especially CdSe nanoplatelets (NPLs), exhibit narrow emission bands in the visible part of the spectrum, a property needed for more efficient white light LEDs (w-LEDs) and vibrant displays. In these applications, the luminescent materials operate at elevated tem¬peratures, which affects the emission linewidth. Insight into this thermal broadening is important for application in w-LEDs but has so far not been investigated over a temperature range that is relevant for these applications. In this thesis, I report on the temperature-dependent spectral linewidth of cadmium chalcogenide NPLs and QDs. NaYF4 NCs doped with lanthanide ions are efficient upconversion materials that can convert two low-energy infrared photons to one high-energy visible photon. These materials can be used in deep-tissue imaging and to enhance the efficiency of solar cells. The formation mechanism of both NaYF4 NCs and CdSe NPLs is still debated. Control over the NC growth is essential to adjust the NC properties. In this thesis, I report on the mechanisms of their nucleation and growth, monitored using in situ absorption and x-ray scattering techniques

    Accurate quantum transport modelling and epitaxial structure design of high-speed and high-power In0.53Ga0.47As/AlAs double-barrier resonant tunnelling diodes for 300-GHz oscillator sources

    Get PDF
    Terahertz (THz) wave technology is envisioned as an appealing and conceivable solution in the context of several potential high-impact applications, including sixth generation (6G) and beyond consumer-oriented ultra-broadband multi-gigabit wireless data-links, as well as highresolution imaging, radar, and spectroscopy apparatuses employable in biomedicine, industrial processes, security/defence, and material science. Despite the technological challenges posed by the THz gap, recent scientific advancements suggest the practical viability of THz systems. However, the development of transmitters (Tx) and receivers (Rx) based on compact semiconductor devices operating at THz frequencies is urgently demanded to meet the performance requirements calling from emerging THz applications. Although several are the promising candidates, including high-speed III-V transistors and photo-diodes, resonant tunnelling diode (RTD) technology offers a compact and high performance option in many practical scenarios. However, the main weakness of the technology is currently represented by the low output power capability of RTD THz Tx, which is mainly caused by the underdeveloped and non-optimal device, as well as circuit, design implementation approaches. Indeed, indium phosphide (InP) RTD devices can nowadays deliver only up to around 1 mW of radio-frequency (RF) power at around 300 GHz. In the context of THz wireless data-links, this severely impacts the Tx performance, limiting communication distance and data transfer capabilities which, at the current time, are of the order of few tens of gigabit per second below around 1 m. However, recent research studies suggest that several milliwatt of output power are required to achieve bit-rate capabilities of several tens of gigabits per second and beyond, and to reach several metres of communication distance in common operating conditions. Currently, the shortterm target is set to 5−10 mW of output power at around 300 GHz carrier waves, which would allow bit-rates in excess of 100 Gb/s, as well as wireless communications well above 5 m distance, in first-stage short-range scenarios. In order to reach it, maximisation of the RTD highfrequency RF power capability is of utmost importance. Despite that, reliable epitaxial structure design approaches, as well as accurate physical-based numerical simulation tools, aimed at RF power maximisation in the 300 GHz-band are lacking at the current time. This work aims at proposing practical solutions to address the aforementioned issues. First, a physical-based simulation methodology was developed to accurately and reliably simulate the static current-voltage (IV ) characteristic of indium gallium arsenide/aluminium arsenide (In-GaAs/AlAs) double-barrier RTD devices. The approach relies on the non-equilibrium Green’s function (NEGF) formalism implemented in Silvaco Atlas technology computer-aided design (TCAD) simulation package, requires low computational budget, and allows to correctly model In0.53Ga0.47As/AlAs RTD devices, which are pseudomorphically-grown on lattice-matched to InP substrates, and are commonly employed in oscillators working at around 300 GHz. By selecting the appropriate physical models, and by retrieving the correct materials parameters, together with a suitable discretisation of the associated heterostructure spatial domain through finite-elements, it is shown, by comparing simulation data with experimental results, that the developed numerical approach can reliably compute several quantities of interest that characterise the DC IV curve negative differential resistance (NDR) region, including peak current, peak voltage, and voltage swing, all of which are key parameters in RTD oscillator design. The demonstrated simulation approach was then used to study the impact of epitaxial structure design parameters, including those characterising the double-barrier quantum well, as well as emitter and collector regions, on the electrical properties of the RTD device. In particular, a comprehensive simulation analysis was conducted, and the retrieved output trends discussed based on the heterostructure band diagram, transmission coefficient energy spectrum, charge distribution, and DC current-density voltage (JV) curve. General design guidelines aimed at enhancing the RTD device maximum RF power gain capability are then deduced and discussed. To validate the proposed epitaxial design approach, an In0.53Ga0.47As/AlAs double-barrier RTD epitaxial structure providing several milliwatt of RF power was designed by employing the developed simulation methodology, and experimentally-investigated through the microfabrication of RTD devices and subsequent high-frequency characterisation up to 110 GHz. The analysis, which included fabrication optimisation, reveals an expected RF power performance of up to around 5 mW and 10 mW at 300 GHz for 25 μm2 and 49 μm2-large RTD devices, respectively, which is up to five times higher compared to the current state-of-the-art. Finally, in order to prove the practical employability of the proposed RTDs in oscillator circuits realised employing low-cost photo-lithography, both coplanar waveguide and microstrip inductive stubs are designed through a full three-dimensional electromagnetic simulation analysis. In summary, this work makes and important contribution to the rapidly evolving field of THz RTD technology, and demonstrates the practical feasibility of 300-GHz high-power RTD devices realisation, which will underpin the future development of Tx systems capable of the power levels required in the forthcoming THz applications

    Pulsed Free Space Photonic Vector Network Analyzers

    Get PDF
    Terahertz (THz) radiation (0.1–10 THz) has demonstrated great significance in a wide range of interdisciplinary applications due to its unique properties such as the capacity to penetrate optically opaque materials without ionizing effect, superior spatial resolution as compared to the microwave domain for imaging or ability to identify a vast array of molecules using THz fingerprinting. Advancements in generation and detection techniques, as well as the necessities of application-driven research and industry, have created a substantial demand for THz-range devices and components. However, progress in the development of THz components is hampered by a lack of efficient and affordable characterization systems, resulting in limited development in THz science and technology. Vector Network Analyzers (VNAs) are highly sophisticated well-established characterization instruments in the microwave bands, which are now employed in the lower end of the THz spectrum (up to 1.5 THz) using frequency extender modules. These modules are extremely expensive, and due to the implementation of hollow metallic waveguides for their configuration, they are narrowband, requiring at least six modules to achieve a frequency coverage of 0.2–1.5 THz. Moreover, they are susceptible to problems like material losses, manufacturing and alignment tolerances etc., making them less than ideal for fast, broadband investigation. The main objective of this thesis is to design a robust but cost-effective characterization system based on a photonic method that can characterize THz components up to several THz in a single configuration. To achieve this, we design architectures for the Photonic Vector Network Analyzer (PVNA) concept, incorporating ErAs:In(Al)GaAs-based photoconductive sources and ErAs:InGaAs-based photoconductive receivers, driven with a femtosecond pulsed laser operating at 1550 nm. The broadband photonic devices replace narrowband electronic ones in order to record the Scattering (S)-parameters in a free space configuration. Corresponding calibration and data evaluation methods are also developed. Then the PVNAs are configured, and their capabilities are validated by characterizing various THz components, including a THz isolator, a distributed Bragg Reflector, a Split-Ring Resonator array and a Crossed-Dipole Resonator (CDR) array, in terms of their S-parameters. The PVNAs are also implemented to determine the complex refractive index or dielectric permittivity and physical thickness of several materials in the THz range. Finally, we develop an ErAs:In(Al)GaAs-based THz transceiver and implement it in a PVNA configuration, resulting in a more compact setup that is useful for industrial applications. The feasibility of such systems is also verified by characterizing several THz components. The configured systems achieve a bandwidth of more than 2.5 THz, exceeding the maximum attainable frequency of the commercial Electronic Vector Network Analyzer (EVNA) extender modules. For the 1.1-1.5 THz band, the dynamic range of 47-35 dB (Equivalent Noise Bandwidth (ENBW) = 9.196 Hz) achieved with the PVNA is comparable to the dynamic range of 45-25 dB (ENBW = 10 Hz) of the EVNA. Both amplitude and phase of the S-parameters, determined by the configured PVNAs, are compared with simulations or theoretical models and showed excellent agreement. The PVNA could discern multi-peak and narrow resonance characteristics despite its lower spectral resolution (∼3-7 GHz) compared to the EVNA. By accurately determining the S-parameters of multiple THz components, the transceiver-based PVNA also demonstrated its exceptional competence. With huge bandwidth and simpler calibration techniques, the PVNA provides a potential solution to bridge the existing technological gap in THz-range characterization systems and offers a solid platform for THz component development, paving the way for more widespread application of THz technologies in research and industry

    Beam scanning by liquid-crystal biasing in a modified SIW structure

    Get PDF
    A fixed-frequency beam-scanning 1D antenna based on Liquid Crystals (LCs) is designed for application in 2D scanning with lateral alignment. The 2D array environment imposes full decoupling of adjacent 1D antennas, which often conflicts with the LC requirement of DC biasing: the proposed design accommodates both. The LC medium is placed inside a Substrate Integrated Waveguide (SIW) modified to work as a Groove Gap Waveguide, with radiating slots etched on the upper broad wall, that radiates as a Leaky-Wave Antenna (LWA). This allows effective application of the DC bias voltage needed for tuning the LCs. At the same time, the RF field remains laterally confined, enabling the possibility to lay several antennas in parallel and achieve 2D beam scanning. The design is validated by simulation employing the actual properties of a commercial LC medium

    Analog Circuits for Computing

    Get PDF
    This project entails designing, simulating, and verifying analog circuits that can perform essential computing functions for power systems applications. The project aims to remedy critical challenges associated with handling calculations digitally, namely, time and power. This project\u27s scope includes creating a library of circuits in SPICE that can be used to model and simulate complex mathematical equations. From these SPICE models, the circuit can be constructed physically, where the solution can be generated in less time using less power than doing the computation digitally. The performance and efficiency of analog computing will be measured and compared to conventional digital methods

    Selected problems of materials science. Vol. 2. Nano-dielectrics metals in electronics. Mеtamaterials. Multiferroics. Nano-magnetics

    Get PDF
    The textbook examines physical foundations and practical application of current electronics materials. Modern theories are presented, more important experimental data and specifications of basic materials necessary for practical application are given. Contemporary research in the field of microelectronics and nanophysics is taken into account, while special attention is paid to the influence of the internal structure on the physical properties of materials and the prospects for their use. English-language lectures and other classes on the subject of the book are held at Igor Sikorsky Kyiv Polytechnic Institute at the departments of “Applied Physics” and “Microelectronics” on the subject of materials science, which is necessary for students of higher educational institutions when performing scientific works. For master’s degree applicants in specialty 105 “Applied physics and nanomaterials”.Розглянуто фізичні основи та практичне застосування актуальних матеріалів електроніки. Подано сучасні теорії, наведено найважливіші експериментальні дані та специфікації основних матеріалів, які потрібні для практичного застосування. Враховано сучасні дослідження у галузі мікроелектроніки та нанофізики, при цьому особливу увагу приділено впливу внутрішньої структури на фізичні властивості матеріалів і на перспективи їх використання. Англомовні лекції та інші види занять за тематикою книги проводяться в КПІ ім. Ігоря Сікорського на кафедрах «Прикладна фізика» та «Мікро-електроніка» за напрямом матеріалознавство, що необхідно студентам вищих навчальних закладів при виконанні наукових робіт. Для здобувачів магістратури за спеціальністю 105 «Прикладна фізика та наноматеріали»

    Various Applications of Methods and Elements of Adaptive Optics

    Get PDF
    This volume is focused on a wide range of topics, including adaptive optic components and tools, wavefront sensing, different control algorithms, astronomy, and propagation through turbulent and turbid media
    corecore