High Current Matching over Full-Swing and Low-Glitch Charge Pump Circuit for PLLs

A high current matching over full-swing and low-glitch charge pump (CP) circuit is proposed. The current of the CP is split into two identical branches having one-half the original current. The two branches are connected in source-coupled structure, and a two-stage amplifier is used to regulate the common-source voltage for the minimum current mismatch. The proposed CP is designed in TSMC 0.18µm CMOS technology with a power supply of 1.8 V. SpectreRF based simulation results show the mismatch between the current source and the current sink is less than 0.1% while the current is 40 µA and output swing is 1.32 V ranging from 0.2 V to 1.52 V. Moreover, the transient output current presents nearly no glitches. The simulation results verify the usage of the CP in PLLs with the maximum tuning range from the voltage-controlled oscillator, as well as the low power supply applications

Switched Capacitor DC-DC Converter for Miniaturised Wearable Systems

Motivated by the demands of the integrated power system in the modern wearable electronics, this paper presents a new method of inductor-less switched-capacitor (SC) based DC-DC converter designed to produce two simultaneous boost and buck outputs by using a 4-phases logic switch mode regulation. While the existing SC converters missing their reconfigurability during needed spontaneous multi-outputs at the load ends, this work overcomes this limitation by being able to reconfigure higher gain mode at dual outputs. From an input voltage of 2.5 V, the proposed converter achieves step-up and step-down voltage conversions of 3.74 V and 1.233 V for Normal mode, and 4.872 V and 2.48 V for High mode, with the ripple variation of 20–60 mV. The proposed converter has been designed in a standard 0.35 μm CMOS technology and with conversion efficiencies up to 97–98% is in agreement with state-of-the-art SC converter designs. It produces the maximum load currents of 0.21 mA and 0.37 mA for Normal and High modes respectively. Due to the flexible gain accessibility and fast response time with only two clock cycles required for steady state outputs, this converter can be applicable for multi-function wearable devices, comprised of various integrated electronic modules

Cross-Coupled Charge Pump Synthesis Based on Full Transistor-Level

This paper presents utility for the design of the cross-coupled charge pump, which is used for supplying peripherals with low current consumption on the chip, as the EEPROM or FLASH memories. The article summarizes the knowledge in the field of the theoretical and practical analysis of the cross-coupled charge pump (design relationships and their connection with the pump parameters, as the threshold voltage, power supply voltage, clock signal frequency, etc.) that are applicated in the design algorithm. Optimal MOSFETs sizes (W, L) were find based on the construct of the time response characteristics of the pump sub-block and finding of the maximal voltage increase in the active interval of the clock signal and minimizing of the pump losses, as the switch reverse current, inverter cross current, etc. Synthesis process includes the design of the pump functional blocks with dominant real properties, which are described based on BSIM equations for long channel MOSFET. The pump stage complex model is applicated for estimation of the number of pump stages via state-space model description and using of the interpolation polynomial functions in the algorithm. It involves the construction of the time response characteristic due to the state variables and prediction of the number of the pump stages for the next cycle based on the previous data. Optimization of the pump area is based on the minimizing of the main capacitor in each of the pump stages (number of the pump stages must be increased to obtain the desired output voltage value.) Access is designed to stress the maximum pump voltage efficiency. The whole procedure is summarized in the practical example, in which the solution is shown both in terms of maximal voltage efficiency and the optimal pump area on a chip with respect to the clock signal frequency. Added functions of the design environment are explained, inclusive of the designed pump netlist generating for professional design environment Mentor Graphics including the real models of components that are available in library MGC Design Kit. The procedure gives designer credible results without long timeconsuming optimization process. In addition, the complex model allows the inclusion effects of higher-levels

High Efficiency Cross-Coupled Charge Pump Circuit with Four-Clock Signals

© Allerton Press, Inc. 2018A fully integrated cross-coupled charge pump circuit for boosting dc-to-dc converter applications with four-clock signals has been proposed. With the new clock scheme, this charge pump eliminates all of the reversion power loss and reduces the ripple voltage. In addition, the largest voltage differences between the terminals of all transistors do not exceed the power supply voltage for solving the gate-oxide overstress problem in the conventional charge pump circuits and enhancing the reliability. This proposed charge pump circuit does not require any extra level shifter; therefore, the power efficiency is increased. The proposed charge pump circuit has been simulated using Spectre in the TSMC 0.18 μm CMOS process. The simulation results show that the maximum voltage conversion efficiency of the new 3-stage cross-coupled circuit with an input voltage of 1.5Vis 99.8%. According to the comparison results of the conventional pump and the enhanced charge pump proposed, the output ripple voltage has been significantly reduced.Peer reviewe

A fully integrated multiband frequency synthesizer for WLAN and WiMAX applications

This paper presents a fractional N frequency synthesizer which covers WLAN and WiMAX frequencies on a single chip. The synthesizer is fully integrated in 0.35μm BiCMOS AMS technology except crystal oscillator. The synthesizer operates at four frequency bands (3.101-3.352GHz, 3.379-3.727GHz, 3.7-4.2GHz, 4.5-5.321GHz) to provide the specifications of 802.16 and 802.11 a/b/g/y. A single on-chip LC - Gm based VCO is implemented as the core of this synthesizer. Different frequency bands are selected via capacitance switching and fine tuning is done using varactor for each of these bands. A bandgap reference circuit is implemented inside of this charge pump block to generate temperature and power supply independent reference currents. Simulated settling time is around 10μsec. Total power consumption is measured to be 118.6mW without pad driving output buffers from a 3.3V supply. The phase noise of the oscillator is lower than -116.4dbc/Hz for all bands. The circuit occupies 2.784 mm2 on Si substrate, including DC, Digital and RF pads

Morphing Switched-Capacitor Converters with Variable Conversion Ratio

High-voltage-gain and wide-input-range dc-dc converters are widely used in various electronics and industrial products such as portable devices, telecommunication, automotive, and aerospace systems. The two-stage converter is a widely adopted architecture for such applications, and it is proven to have a higher efficiency as compared with that of the single-stage converter. This paper presents a modular-cell-based morphing switched-capacitor (SC) converter for application as a front-end converter of the two-stage converter. The conversion ratio of this converter is flexible and variable and can be freely extended by increasing more SC modules. The varying conversion ratio is achieved through the morphing of the converter's structure corresponding to the amplitude of the input voltage. This converter is light and compact, and is highly efficient over a very wide range of input voltage and load conditions. Experimental work on a 25-W, 6-30-V input, 3.5-8.5-V output prototype, is performed. For a single SC module, the efficiency over the entire input voltage range is higher than 98%. Applied into the two-stage converter, the overall efficiency achievable over the entire operating range is 80% including the driver's loss

An Energy-Efficient, Dynamic Voltage Scaling Neural Stimulator for a Proprioceptive Prosthesis

Accepted versio

Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

A Low Noise Sub-Sampling PLL in Which Divider Noise Is Eliminated and PD-CP Noise Is not multiplied by N^2

This paper presents a 2.2-GHz low jitter sub-sampling based PLL. It uses a phase-detector/charge-pump (PD/CP)that sub-samples the VCO output with the reference clock. In contrast to what happens in a classical PLL, the PD/CP noise is not multiplied by N2 in this sub-sampling PLL, resulting in a low noise contribution from the PD/CP. Moreover, no frequency divider is needed in the locked state and hence divider noise and power can be eliminated. An added frequency locked loop guarantees correct frequency locking without degenerating jitter performance when in lock. The PLL is implemented in a standard 0.18- m CMOS process. It consumes 4.2 mA from a 1.8 V supply and occupies an active area of 0.4 X 0.45 m