23,129 research outputs found
Limits on Fundamental Limits to Computation
An indispensable part of our lives, computing has also become essential to
industries and governments. Steady improvements in computer hardware have been
supported by periodic doubling of transistor densities in integrated circuits
over the last fifty years. Such Moore scaling now requires increasingly heroic
efforts, stimulating research in alternative hardware and stirring controversy.
To help evaluate emerging technologies and enrich our understanding of
integrated-circuit scaling, we review fundamental limits to computation: in
manufacturing, energy, physical space, design and verification effort, and
algorithms. To outline what is achievable in principle and in practice, we
recall how some limits were circumvented, compare loose and tight limits. We
also point out that engineering difficulties encountered by emerging
technologies may indicate yet-unknown limits.Comment: 15 pages, 4 figures, 1 tabl
Photon assisted tunneling in pairs of silicon donors
Shallow donors in silicon are favorable candidates for the implementation of solid-state quantum computer architectures because of the promising combination of atomiclike coherence properties and scalability from the semiconductor manufacturing industry. Quantum processing schemes require (among other things) controlled information transfer for readout. Here we demonstrate controlled electron tunneling at 10 K from P to Sb impurities and vice versa with the assistance of resonant terahertz photons
Atomistic modeling of amorphous silicon carbide: An approximate first-principles study in constrained solution space
Localized basis ab initio molecular dynamics simulation within the density
functional framework has been used to generate realistic configurations of
amorphous silicon carbide (a-SiC). Our approach consists of constructing a set
of smart initial configurations that conform essential geometrical and
structural aspects of the materials obtained from experimental data, which is
subsequently driven via first-principles force-field to obtain the best
solution in a reduced solution space. A combination of a priori information
(primarily structural and topological) along with the ab-initio optimization of
the total energy makes it possible to model large system size (1000 atoms)
without compromising the quantum mechanical accuracy of the force-field to
describe the complex bonding chemistry of Si and C. The structural, electronic
and the vibrational properties of the models have been studied and compared to
existing theoretical models and available data from experiments. We demonstrate
that the approach is capable of producing large, realistic configurations of
a-SiC from first-principles simulation that display excellent structural and
electronic properties of a-SiC. Our study reveals the presence of predominant
short-range order in the material originating from heteronuclear Si-C bonds
with coordination defect concentration as small as 5% and the chemical disorder
parameter of about 8%.Comment: 16 pages, 7 figure
Correlation effects and spin dependent transport in carbon nanostructures
The impact of symmetry breaking perturbations on the spin dependent transport
through carbon nanotube quantum dots in the Kondo regime is discussed.Comment: 10 pages, 6 figure
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