48,983 research outputs found
Engineering study for a mass memory system for advanced spacecrafts Final report, 1 Dec. 1969 - 1 Jul. 1970
Mass memory system for advanced spacecraf
Study of multiple hologram recording in lithium niobate
The results of a number of theoretical and experimental studies relating to multiple hologram recording in lithium niobate are reported. The analysis of holographic gratings stored in lithium niobate has been extended to cover a more realistic range of physical situations. A new successful dynamic (feedback) theory for describing recording, nondestructive reading, erasure, enhancement, and angular sensitivity has been developed. In addition, the possible architectures of mass data storage systems have been studied
Nonphotolithographic nanoscale memory density prospects
Technologies are now emerging to construct molecular-scale electronic wires and switches using bottom-up self-assembly. This opens the possibility of constructing nanoscale circuits and memories where active devices are just a few nanometers square and wire pitches may be on the order of ten nanometers. The features can be defined at this scale without using photolithography. The available assembly techniques have relatively high defect rates compared to conventional lithographic integrated circuits and can only produce very regular structures. Nonetheless, with proper memory organization, it is reasonable to expect these technologies to provide memory densities in excess of 10/sup 11/ b/cm/sup 2/ with modest active power requirements under 0.6 W/Tb/s for random read operations
Application of Memristors in Microwave Passive Circuits
The recent implementation of the fourth fundamental electric circuit element, the memristor, opened new vistas in many fields of engineering applications. In this paper, we explore several RF/microwave passive circuits that might benefit from the memristor salient characteristics. We consider a power divider, coupled resonator bandpass filters, and a low-reflection quasi-Gaussian lowpass filter with lossy elements. We utilize memristors as configurable linear resistors and we propose memristor-based bandpass filters that feature suppression of parasitic frequency pass bands and widening of the desired rejection band. The simulations are performed in the time domain, using LTspice, and the RF/microwave circuits under consideration are modeled by ideal elements available in LTspice
Prospect for antiferromagnetic spintronics
Exploiting both spin and charge of the electron in electronic micordevices
has lead to a tremendous progress in both basic condensed-matter research and
microelectronic applications, resulting in the modern field of spintronics.
Current spintronics relies primarily on ferromagnets while antiferromagnets
have traditionally played only a supporting role. Recently, antiferromagnets
have been revisited as potential candidates for the key active elements in
spintronic devices. In this paper we review approaches that have been employed
for reading, writing, and storing information in antiferromagnets
X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories
Silicon-based Static Random Access Memories (SRAM) and digital Boolean logic
have been the workhorse of the state-of-art computing platforms. Despite
tremendous strides in scaling the ubiquitous metal-oxide-semiconductor
transistor, the underlying \textit{von-Neumann} computing architecture has
remained unchanged. The limited throughput and energy-efficiency of the
state-of-art computing systems, to a large extent, results from the well-known
\textit{von-Neumann bottleneck}. The energy and throughput inefficiency of the
von-Neumann machines have been accentuated in recent times due to the present
emphasis on data-intensive applications like artificial intelligence, machine
learning \textit{etc}. A possible approach towards mitigating the overhead
associated with the von-Neumann bottleneck is to enable \textit{in-memory}
Boolean computations. In this manuscript, we present an augmented version of
the conventional SRAM bit-cells, called \textit{the X-SRAM}, with the ability
to perform in-memory, vector Boolean computations, in addition to the usual
memory storage operations. We propose at least six different schemes for
enabling in-memory vector computations including NAND, NOR, IMP (implication),
XOR logic gates with respect to different bit-cell topologies the 8T cell
and the 8T Differential cell. In addition, we also present a novel
\textit{`read-compute-store'} scheme, wherein the computed Boolean function can
be directly stored in the memory without the need of latching the data and
carrying out a subsequent write operation. The feasibility of the proposed
schemes has been verified using predictive transistor models and Monte-Carlo
variation analysis.Comment: This article has been accepted in a future issue of IEEE Transactions
on Circuits and Systems-I: Regular Paper
Architectures for a quantum random access memory
A random access memory, or RAM, is a device that, when interrogated, returns
the content of a memory location in a memory array. A quantum RAM, or qRAM,
allows one to access superpositions of memory sites, which may contain either
quantum or classical information. RAMs and qRAMs with n-bit addresses can
access 2^n memory sites. Any design for a RAM or qRAM then requires O(2^n)
two-bit logic gates. At first sight this requirement might seem to make large
scale quantum versions of such devices impractical, due to the difficulty of
constructing and operating coherent devices with large numbers of quantum logic
gates. Here we analyze two different RAM architectures (the conventional fanout
and the "bucket brigade") and propose some proof-of-principle implementations
which show that in principle only O(n) two-qubit physical interactions need
take place during each qRAM call. That is, although a qRAM needs O(2^n) quantum
logic gates, only O(n) need to be activated during a memory call. The resulting
decrease in resources could give rise to the construction of large qRAMs that
could operate without the need for extensive quantum error correction.Comment: 10 pages, 7 figures. Updated version includes the answers to the
Refere
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