Controlled structures and properties of single-walled carbon nanotubes custom-produced by chemical vapor deposition method.

Single walled carbon nanotubes (SWNT) are considered as one of the most promising nanomaterials for a large variety of applications that require SWNTs with controlled structures and properties, which is the main focus of this dissertation. The first approach to tackle this problem is to develop appropriate methods to synthesize SWNTs of controlled structure. To achieve this goal, a number of techniques have been developed to selectively grow SWNTs on different support from porous silica to flat substrates. It is demonstrated that a precise control over chirality, diameter and bundle size can be obtained by tuning the reaction temperature in the growth of SWNT over Co-Mo/silica powder by CO disproportionation. In addition, a novel method for selective growth of SWNT on flat substrates has been developed. In this method, SWNTs can be grown either in random direction or vertical alignment on the surface under standard CoMoCATRTM reaction conditions. The second trust of this dissertation is to investigate the properties of as-produced SWNTS with their controlled structural parameters (i.e., diameter, bundle size, chirality, and alignment). Field emission measurements have been conducted to evaluate the dependence of the emission characteristics on the SWNT structure. For the nanotubes grown on flat substrates, the response of the vertically aligned SWNT to polarization of both X-rays (in XANES) and visible light (in Raman) clearly revealed the anisotropic optical properties of V-SWNT. Finally, efforts have been made to explore the growth mechanism of VSWNT on flat substrate. X-ray photoelectron spectroscopy and atomic force microscopy conducted on the flat surface with deposited catalyst gave detailed information about the chemical status of Co-Mo catalyst and their morphological distribution. The evolution of the growth of VSWNT with time was visualized by scanning electron the chemical status of Co-Mo catalyst and their morphological distribution. The evolution of the growth of VSWNT with time was visualized by scanning electron microscopy and clearly demonstrated a two-step process involving the formation of a crust layer followed by a concerted growth constrained by crust. Then a kinetic study with fitted growth data has been derived and the maximum growth rate estimated (i.e. 12.5 nm/sec). In addition to the growth of VSWNT, oxidation and transferring of VSWNT has been investigated for future applications

Investigation of epitaxial lift-off GaAs and langmuir-blodgett films for optoelectronic device applications

Epitaxial lift-off (ELO), a technique of removing an epitaxially grown GaAs layer from its growth substrate by selective etching of an AlAs sacrificial layer, is described for field-effect transistor fabrication independent of the GaAs growth substrate. Metal Semiconductor Field-Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) fabricated on silicon and sapphire substrates using ELO are investigated. A 0.1 μm gate length depletion mode MESFET made on silicon exhibited a unity current gain frequency ft = 34 GHz. Excellent device isolation with subpicoampere leakage currents is obtained. A high input impedance amplifier has been implemented on silicon substrate using ELO GaAs MESFETs. The amplifier had an input RC time constant limited bandwidth of 500 MHz. Results of investigation of a novel source of cadmium and zinc diffusion for shallow p+-n junction fabrication in In0.53Ga0.47As/InP are also presented. Langmuir-Blodgett (LB) deposited monolayers of Cadmium and Zinc arachidate have been used as a source of Cd and Zn dopants in InGaAs/InP. This new source provides precise control of the dopant dose through the number of LB film monolayers deposited and it is also a safer method of handling toxic Cd. The LB film can be patterned by lift-off for a patterned diffusion without a mask. Highly doped (Na= 2 -4 x 1019 cm-3 ), shallow (0.1-0.4 μm) p+-n junctions have been obtained. Junction field-effect transistors(JFETs) and PIN photodetectors have been fabricated as a demonstration of the usefulness of the technique. A PIN photodetector had a 100 pA dark current at -5 V DC bias and a bandwidth of 2 GHz. A new technique for fabricating optoelectronic integrated circuit (OEIC) photoreceivers for 1.3-1.55 μm wavelength optical communication has also been proposed. The proposed OEIC uses ELO GaAs MESFETs and InGaAs/InP PIN photodetectors

Fundamental Characterization of Low Dimensional Carbon Nanomaterials for 3D Electronics Packaging

Transistor miniaturization has over the last half century paved the way for higher value electronics every year along an exponential pace known as \u27Moore\u27s law\u27. Now, as the industry is reaching transistor features that no longer makes economic sense, this way of developing integrated circuits (ICs) is coming to its definitive end. As a solution to this problem, the industry is moving toward higher hanging fruits that can enable larger sets of functionalities and ensuring a sustained performance increase to continue delivering more cost-effective ICs every product cycle. These design strategies beyond Moore\u27s law put emphasis on 3D stacking and heterogeneous integration, which if implemented correctly, will deliver a continued development of ICs for a foreseeable future. However, this way of building semiconductor systems does bring new issues to the table as this generation of devices will place additional demands on materials to be successful. The international roadmap of devices and systems (IRDS) highlights the need for improved materials to remove bottlenecks in contemporary as well as future systems in terms of thermal dissipation and interconnect performance. For this very purpose, low dimensional carbon nanomaterials such as graphene and carbon nanotubes (CNTs) are suggested as potential candidates due to their superior thermal, electrical and mechanical properties. Therefore, a successful implementation of these materials will ensure a continued performance to cost development of IC devices.This thesis presents a research study on some fundamental materials growth and reliability aspects of low dimensional carbon based thermal interface materials (TIMs) and interconnects for electronics packaging applications. Novel TIMs and interconnects based on CNT arrays and graphene are fabricated and investigated for their thermal resistance contributions as well electrical performance. The materials are studied and optimized with the support of chemical and structural characterization. Furthermore, a reliability study was performed which found delamination issues in CNT array TIMs due to high strains from thermal expansion mismatches. This study concludes that CNT length is an important factor when designing CNT based systems and the results show that by further interface engineering, reliability can be substantially improved with maintained thermal dissipation and electrical performance. Additionally, a heat treatment study was made that enables improvement of the bulk crystallinity of the materials which will enable even better performance in future applications

A Thermally actuated microelectromechanical (MEMS) device for measuring viscosity

A thermally actuated non-cantilever-beam micro-electro-mechanical viscosity sensor is presented. The proposed device is based on thermally induced vibrations of a silicon-based membrane and its damping due to the surrounding fluid. This vibration viscometer device utilizes thermal actuation through an in-situ resistive heater and piezoresistive sensing, both of which utilize CMOS compatible materials leading to an inexpensive and reliable system. Due to the nature of the actuation, thermal analysis was performed utilizing PN diodes embedded in the silicon membrane to monitor its temperature. This analysis determined the minimum heater voltage pulse amplitude and time in order to prevent heat loss to the oil under test that would lead to local viscosity changes. In order to study the natural vibration behavior of the complex multilayer membrane that is needed for the proposed sensor, a designed experiment was carried out. In this experiment, the effects of the material composition of the membrane and the size of the actuation heater were studied in detail with respect to their effects on the natural frequency of vibration. To confirm the validity of these measurements, Finite Element Analysis and white-light interferometry were utilized. Further characterization of the natural frequency of vibration of the membranes was carried out at elevated temperatures to explore the effects of temperature. Complex interactions take place among the different layers that compose the membrane structures. Finally, viscosity measurements were performed and compared to standard calibrated oils as well as to motor oils measured on a commercial cone-and-plate viscometer. The experimentally obtained data is compared to theoretical predictions and an empirically-derived model to predict viscosity from vibration measurements is proposed. Frequency correlation to viscosity was shown to be the best indicator for the range of viscosities tested with lower error (+/- 5%), than that of quality factor (+/- 20%). Further viscosity measurements were taken at elevated temperatures and over long periods of time to explore the device reliability and drift. Finally, further size reduction of the device was explored