452 research outputs found

    Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

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    Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.Comment: Review article, to appear in Journal of Computational and Theoretical Nanoscienc

    Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure

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    This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based)

    Effect of Electrostatic Discharge on Electrical Characteristics of Discrete Electronic Components

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    This article reports on preliminary results of a study conducted to examine how temporary electrical overstress seed fault conditions in discrete power electronic components that cannot be detected with reliability tests but impact longevity of the device. These defects do not result in formal parametric failures per datasheet specifications, but result in substantial change in the electrical characteristics when compared with pristine device parameters. Tests were carried out on commercially available 600V IGBT devices using transmission line pulse (TLP) and system level ESD stress. It was hypothesized that the ESD causes local damage during the ESD discharge which may greatly accelerate degradation mechanisms and thus reduce the life of the components. This hypothesis was explored in simulation studies where different types of damage were imposed to different parts of the device. Experimental results agree qualitatively with the simulation for a number of tests which will motivate more in-depth modeling of the damage

    ランダム・テレグラフ・ノイズの微細MOSFETへの影響に関する研究

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    筑波大学 (University of Tsukuba)201

    Power electronics for a 1-kilowatt arc jet thruster

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    After more than two decades, new space mission requirements have revived interest in arcjet systems. The preliminary development and demonstration of new, high efficiency, power electronic concepts for start up and steady state control of dc arcjets is reported. The design comprises a pulse width modulated power converter which is closed loop configured to give fast current control. An inductor, in series with the arcjet, serves the dual role of providing instantaneous current control, as well as a high voltage arc ignition pulse. Benchmark efficiency, transient response, regulation, and ripple data are presented. Tests with arcjets demonstrate that the power electronics breadboard can start thrusters consistently with no apparent damage and transfer reliably to the nondestructive high voltage arc mode in less than a second

    Survey of cryogenic semiconductor devices

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    Infrared receivers for low background astronomy: Incoherent detectors and coherent devices from one micrometer to one millimeter

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    The status of incoherent detectors and coherent receivers over the infrared wavelength range from one micrometer to one millimeter is described. General principles of infrared receivers are included, and photon detectors, bolometers, coherent receivers, and important supporting technologies are discussed, with emphasis on their suitability for low background astronomical applications. Broad recommendations are presented and specific opportunities are identified for development of improved devices

    Doctor of Philosophy

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    dissertationMicroelectromechanical systems (MEMS) resonators on Si have the potential to replace the discrete passive components in a power converter. The main intention of this dissertation is to present a ring-shaped aluminum nitride (AlN) piezoelectric microreson

    Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

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    Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the latter is linked to the oxygen affinity or the ionic radius, of the X element, several IXZO samples are synthesized by the sol-gel process, with a large number (14) of X elements. The IXZOs are characterized by XPS, SIMS, DRX, and UV-spectroscopy and used for fabricating thin film transistors. Channel mobility and the interface defect density NST, extracted from the TFT electrical characteristics and low frequency noise, followed an increasing trend and the values of mobility and NST are linked by an exponential relation. The highest mobility (8.5 cm2/Vs) is obtained in In-Ga-Zn-O, and slightly lower value for Sb and Sn-doped IXZOs, with NST is about 2E12 cm2/eV, close to that of the In-Zn-O reference TFT. This is explained by a higher electronegativity of Ga, Sb, and Sn than Zn and In, their ionic radius values being close to that of In and Zn. Consequently, Ga, Sb, and Sn induce weaker perturbations of In-O and Zn-O sequences in the sol-gel process, than the X elements having lower electronegativity and different ionic radius. The TFTs with X = Ca, Al, Ni and Cu exhibited the lowest mobility and NST > 1E13 cm2/eV, most likely because of metallic or oxide clusters formation

    New fowler-nordheim injection, charge neutralization, and gamma tests on the REM RFT300 RADFET dosimeter

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    Through the injection of a Fowler-Nordheim tunnel current or the inversion of oxide fields during irradiation (Radiation-Induced Charge Neutralization), the oxide charge trapped in thick-oxide (300 nm) commercial RADFETs, often called QOT could be erased. Novel trapped-hole and interface characteristics were observed after treatments of this type at high doses. With both erasure techniques, it was possible only to neutralize a fraction of the oxide trapped charge. A non negligible amount of charge and border traps is deemed here to be ?intractable?. That adjective an a symbol, QIN, are introduced for the first time in this paper. Later sections discuss the possible impact of these results. The conclusion for dosimetry is that a ?reusable RADFET? dosimeter, working up to an unprecedented dose before wearing out, may be a practical possibility.Fil: Lipovetzky, José. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Holmes Siedle, A.. No especifíca;Fil: García Inza, Mariano Andrés. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires; ArgentinaFil: Carbonetto, Sebastián Horacio. Universidad de Buenos Aires; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Redin, Eduardo Gabriel. Universidad de Buenos Aires; ArgentinaFil: Faigon, A.. Universidad de Buenos Aires; Argentin
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