5 research outputs found
A new method for nonlinear circuit simulation in time domain: NOWE
Cataloged from PDF version of article.A new method for the time-domain solution of general
nonlinear dynamic circuits is presented. In this method, the solutions
of the state variables are computed by using their time derivatives up to
some order at the initial time instant. The computation of the higher order
derivatiws b equivalent to solving the same linear circuit for various sets
of dc excitations. Once the time derivatives of the state variables are
obtained, an approximation to the solution can be found as a polynomial
rational function of time. The time derivatives of the approximation at
the initial time instant are matched to those of the exact solution. This
method is promising in terms of execution speed, since it can achieve
the same accuracy as the trapezoidal approximation with much smaller
number of matrix inversions
A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries
Engineering andPhysical Science ResearchCouncil
(EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt
to improve standard cell libraries aimed at operation in the subthreshold regime and in
Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is
examined, with particular emphasis on how subthreshold physical effects degrade
robustness, variability and performance. How prevalent these physical effects are in a
commercial 65nm library is then investigated by extensive modeling of a BSIM4.5
compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out
and post-layout parasitically extracted models simulated to determine the
advantages/disadvantages of each. Full custom ring oscillators are designed and
manufactured. Measured results reveal a close correlation with the simulated results, with
frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices
respectively. The experiment provides the first silicon evidence of the improvement
capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well
as a mechanism of additional temperature stability in the subthreshold regime.
A novel sizing strategy is proposed and pursued to determine whether it is able to produce
a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit
AES cores are synthesized from the novel sizing strategy and compared against a third
AES core synthesized from a state-of-the-art subthreshold standard cell library used by
ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency
improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior
over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in
energy-per-cycle of 24% and frequency improvement of 8.65X.
A comparison to prior art is then performed. Valid cases are presented where the
proposed sizing strategy would be a candidate to produce superior subthreshold circuits
Cumulative index to NASA Tech Briefs, 1986-1990, volumes 10-14
Tech Briefs are short announcements of new technology derived from the R&D activities of the National Aeronautics and Space Administration. These briefs emphasize information considered likely to be transferrable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. This cumulative index of Tech Briefs contains abstracts and four indexes (subject, personal author, originating center, and Tech Brief number) and covers the period 1986 to 1990. The abstract section is organized by the following subject categories: electronic components and circuits, electronic systems, physical sciences, materials, computer programs, life sciences, mechanics, machinery, fabrication technology, and mathematics and information sciences
Cumulative index to NASA Tech Briefs, 1970-1975
Tech briefs of technology derived from the research and development activities of the National Aeronautics and Space Administration are presented. Abstracts and indexes of subject, personal author, originating center, and tech brief number for the 1970-1975 tech briefs are presented