The Connection between solar magnetic fields and photospheric dynamics

La convezione rappresenta il meccanismo principale di trasporto dell’energia negli strati sottostanti la superficie solare. La dinamica dei flussi fotosferici associati a tale meccanismo determina la formazione e l’evoluzione del campo magnetico globale e di una grande varietà di strutture presenti nelle regioni più esterne del Sole. In particolare l’interazione tra i flussi di plasma e il campo magnetico determina la configurazione spaziale e l’evoluzione delle regioni attive e degli elementi magnetici superficiali, importanti ad esempio nel determinare la variabilità solare. La convezione solare può essere studiata o mediante lo sviluppo di simulazioni di magnetoconvezione (simulazioni MHD) o attraverso osservazioni spettrali della superficie solare. In questo lavoro il problema della connessione tra campi magnetici solari e dinamica fotosferica è stato affrontato seguendo un approccio sperimentale. In particolare abbiamo lavorato sui sistemi di acquisizione per la spettroscopia solare bidimensionale, sulla pipeline di riduzione di dati spettroscopici solari e infine sull’analisi dei dati. Uno degli strumenti principali della fisica solare sperimentale è la spettroscopia, che permette di derivare informazioni su molti parametri dell’atmosfera solare, quali velocità, temperatura e campo magnetico. Inoltre, l’analisi spettroscopica permette di ricavare la velocità verticale delle strutture emergenti sulla superficie solare. In questo modo, poiché ogni lunghezza d’onda può essere associata ad una determinata quota nell’atmosfera, è possibile trasformare un’immagine bidimensionale in un campo 3D. Al fine di studiare la dinamica dell’atmosfera solare, sono necessarie osservazioni ad alta risoluzione spettrale e spaziale. Inoltre, la rapida evoluzione delle strutture solari osservate richiede monocromatori con un’elevata trasparenza per acquisire spettri multi-riga in un tempo molto breve. Uno strumento che soddisfa tutte queste richieste è IBIS (Interferometric BIdimensional Spectrometer), uno spettrometro bidimensionale installato presso il Dunn Solar Telescope-DST. IBIS produce dati con elevata risoluzione spaziale (0.2” al DST), spettrale (Dl/l~200000) e temporale (tempo di esposizione 10 ms, rate di acquisizione 5 immagini al secondo). Le immagini acuiqiste con IBIS sono registrare da un sensore CCD. Il Capitolo 1 della tesi fornisce un’introduzione alla spettroscopia solare e all’uso delle immagini spettroscopiche per ottenere informazioni sulla dinamica degli strati fotosferici solari. Lo schema dello strumento IBIS, utilizzato in questa tesi per l’acquisizione delle immagini spettroscopiche, è descritto. Nel Capitolo 2 sono riportate le misure e le calibrazioni, effettuate in laboratorio attraverso la Tecnica della Photon Transfer, di due sensori: il sensore CMOS Si-1920-HD e il sensore EMCCD Andor Ixon DV885. Il nostro interesse in questi sensori nasce dalla necessità di sostituire il sensore attualmente installato sul canale spettrale di IBIS, al fine di incrementare l’efficienza di acquisizione dei dati. In particolare, i miglioramenti al sistema di acquisizione di IBIS riguardano diversi aspetti: aumento della sensibilità/efficienza quantica, riduzione del tempo di lettura, incremento della dimensione dell’array e aumento del guadagno del sensore. Nel Capitolo 3 sono descritti i vari passi della pipeline di riduzione dei dati IBIS, che include sia una correzione standard delle immagini sia un software scritto in IDL per l’analisi di immagini solari ad elevata risoluzione. Nel Capitolo 4 riportiamo i risultati scientifici legati allo studio dell’emersione e dell’organizzazione del campo magnetico sulla superficie solare sia come struttura isolata sia come cluster. Tipiche strutture magnetiche isolate sono le macchie solari e i “pore”. E’ stata studiata la dinamica, su piccola scala, di una regione di intenso campo magnetico (pore), con struttura brillante interna. I pore rappresentano una delle tante strutture formate dall’emersione del campo magnetico sulla superficie solare. Essi rappresentano un link tra i più piccoli elementi di flusso e le regioni magnetiche associate alle macchie. I light bridge, in un pore o in una macchia, sono strutture brillanti che dividono la regione di ombra in una strutture più o meno complessa. Comunemente, i light bridge indicano la presenza di un processo in corso all’interno della regione attiva: l’emersione di regioni magnetiche o, al contrario, il disfacimento dell’intera struttura. In entrambi i casi ci si aspetta una riconfigurazione topologica del campo magnetico emergente. Un altro modo per studiare l’interazione del campo magnetico con i moti del plasma consiste nell’andare ad investigare le proprietà oscillatorie della cromosfera solare, sia quieta che attiva, in relazione alla fotosfera sottostante, ponendo particolare riguardo alla topologia del capo magnetico. Nell’atmosfera solare esiste una frequenza di cut-off acustica che produce una riflessione delle onde a bassa frequenza verso gli strati più bassi dell’atmosfera e la regione convettiva. Dunque solo le onde con frequenza maggiori della frequenza di cut-off possono propagarsi verso gli strati più alti dell’atmosfera. Il campo magnetico modifica dunque le proprietà delle oscillazioni acustiche. In particolare, in presenza di un campo magnetico inclinato la frequenza di cut-off acustica si abbassa, permettendo così la propagazione verso l’alto di onde a frequenza maggiore. Questo risultato è stato confermato dalle mappe dei picchi di potenza relative alla fotosfera e alla cromosfera, ottenute utilizzando i dati acquisiti con IBIS. Lo studio della dinamica della fotosfera solare può essere intrapreso anche con metodi statistici, analizzando le proprietà topologiche degli elementi di origine convettiva e magnetica, come la distribuzione spaziale delle strutture presenti nei magnetogrammi. A tal proposito è stato sviluppato un algoritmo in grado di determinare, in maniera automatica, i “vuoti” in una fissata distribuzione di particelle. Questo metodo, applicato ad una serie temporale di magnetogrammi solari con un ampio campo di vista, ha permesso di identificare i vuoti tra strutture magnetiche e di studiarne la distribuzione sulla superficie solare.Convection is the chief mode of heat transport in the outer envelopes of cool stars such as the Sun. Convective effects are recognizable in large-scale features, such as the global differential rotation and meridional circulation flows, as well as smaller scale phenomena such as granulation, mesogranulation, and supergranulation. Moreover, convective flows widely determine the evolution and organization of tiny magnetic elements observed in the solar surface responsible for small scale irradiance solar variations. Our understanding of the solar convection derives from numerical simulations of compressible convection (MHD approach) and from spectral observations of the solar surface (velocity and center line maps, helioseismological data, etc.). In this work we face the problem of connection between solar magnetic fields and photospheric dynamics through an experimental approach. In particular we worked on acquisitions systems for solar imaging spectroscopy, on a pipeline for the spectroscopic data reduction and on the data analysis. One of the basic tools of observational solar physics is spectroscopy, which allows us to derive information on several physical parameters of solar atmosphere such as velocity, temperature, magnetic field strength etc. Spectroscopic analysis allows us to determine the vertical velocity of solar surface structures. Moreover, as wavelength can be somehow associated to depth in the solar atmosphere, it is possible to transform a bidimensional image in a 3-D field. In order to study solar atmosphere dynamics, observations of adequate spectral purity, together with high spatial resolution to resolve small-scale structures are necessary. Moreover, the rapid evolution of observed solar features requires monochromators with high transparency to acquire multiple-line spectra in a comparatively short time. In order to meet all these requirements, suitable instruments and techniques have to be used. An instrument which satisfies all these constraints is IBIS, an Interferometric Bidimensional Spectrometer, installed at the Dunn Solar Telescope/NSO (Sac Peak, USA). IBIS produces data with high spectral (Dl/l~200000), spatial (0.2’’ at DST telescope) and temporal resolution (exposure time 10 ms; acquisition rate 5 frames s-1). Images acquired with IBIS are currently recorded by a CCD camera. Chapter 1 introduces the reader to the solar spectroscopy and to the use of spectroscopic imaging to retrieve information on solar photospheric layers dynamics. The basic concept and the layout of the IBIS spectrograph, used in this thesis to acquire spectroscopic images, is described. Chapter 2 reports laboratory measurements and calibrations, derived through the application of the Photon Transfer Technique, of two sensors: the SI-1920 HD CMOS sensor and the Andor DV885 EMCCD sensor. Our interest in these sensors is related to the necessity to replace the CCD camera, now installed on the IBIS spectral channel. Improvements in the IBIS camera system concern an increased sensitivity/quantum efficiency, a decreased detector readout time, a larger array size and an increased full well/programmable detector gain. Chapter 3 describes the various steps of the pipeline developed for the IBIS data reduction. The pipeline includes both the standard image processing and a high performance IDL software package written specifically for high resolution solar images. In Chapter 4 we report some results related to the study of the emergence and the organization of the magnetic field on the solar surface both as isolated structures and as clusters. More in detail, typical isolated magnetic features are pores or sunspots. We investigated the small scale dynamics of a strong magnetic field region (pore) with a light bridge inside it, observed with the IBIS spectrometer. An analysis of the intensity and velocity maps revealed the presence, inside the light bridge, of elongated structures showing a kind of reversal in intensity and velocity. More in detail, in the intensity images we observed a narrow central dark lane running along the axis of the light bridge, that we explain proposing an analytical model. Regarding the velocity structure, its topology resembles a convective roll and may indicate a modification of the photospheric convective flows. By adopting the IBIS dataset, we studied the oscillatory properties of the solar atmosphere, in the photosphere and the chromosphere, with particular regard to the influence of the magnetic topology. In particular, we analyzed the propagation of waves in the atmosphere in correspondence of a pore, of a magnetic network area and of a quiet Sun region. Studying the generation and propagation of waves in the solar atmosphere provides information about the atmospheric structure and dynamics and it helps to identify the key mechanism of chromospheric and coronal heating. Finally, by using large FoV MDI magnetograms we analyzed the spatial distribution of reticular clusters of magnetic features, such as the magnetic network. For this purpose, we developed a numerical algorithm able to detect voids between magnetic fragments. We computed Void Probability Functions which describe, in a uniform and objective way, the assessment of the void structure of different magnetic elements distributions

Towards Integrated Fluorescence Sensing

This thesis is an account of ongoing efforts in the Integrated Biomorphic Information Systems Laboratory and the Laboratory for MicroTechnologies towards the implementation of integrated microfabricated biosensing platforms with on-chip fluorescence detection capability. The first chapter is a published, exhaustive, and critical review of state-of-the-art microfluorometers, and it offers a set of performance metrics for evaluating sensors of different architectures. The second chapter consists of material from two journal papers, currently in preparation, in which the development of a polymeric optical filter material for UV fluorescence spectroscopy is presented and its integration with a CMOS active pixel sensor (APS) discussed. The third chapter, which is also an archival publication, presents initial efforts towards achieving high-sensitivity CMOS photodetectors for photon counting-based fluorescence assays in integrated platforms

A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses, including, among others, industrial, automotive, and medical equipment. The impressive growth in photodetector applications is closely linked to the development of CMOS technology, which now offers inexpensive and efficient analog and digi-tal signal processing capabilities. Detectors are often integrated with their respective front end and application-specific digital circuit on the same silicon die, forming complete systems on chip. In some cases the detector itself is not on the same chip but often part of the same package. However, this trend of co-integration of analog front end and digital circuits complicates the design of the analog part. The ever-decreasing supply voltage and the smaller transistors in advanced processes (which are driven by the development of digital cir-cuits) negatively impact the performance of the analog structures and complicates their design. For photodetector systems, the effect most importantly translates into a degradation of dynamic range and signal-to-noise ratio. One way to circumvent the problem of low supply voltages is to shift the operation from voltage domain to time domain. By doing so, the signal is no longer constrained by the supply rails and analog amplification is avoided. The signal takes the form of a time-based modulation, such as pulse-width modulation or pulse-frequency modulation. Another advantage is that the output signal of a time-domain photodetection system is directly interfaceable with digital circuits. In this work, a new type of CMOS-compatible photodetector displaying intrinsic light-to-time conversion is proposed. Its physical structure consists of a MOS gate interleaved with a PN junction. The MOS structure is acting as a photogate. The depletion region shrinks when photogenerated carriers fill the potential well. At some point, the anode of the PN structure is de-isolated from the rest of the detector and triggers a positive-feedback effect that leads to a very steep current increase through the PN-junction. This translates into a signal of very high amplitude and independent from light-intensity, which can be almost directly interfaced with digital circuits. This simplifies the front end circuit compared to photodiode-based systems. The physical behavior of the device is analyzed with the help of TCAD simulations and simple behavioral and shot-noise models are proposed. The device has been co-integrated with its driver and front end circuit in a standard CMOS process and its characteristics have been measured with a custom-made measurement system. The effect of bias parameters on the performance of the sensor are also analyzed. The limitations of the device are discussed, the most important ones being dark current and linearity. Techno-logical solutions, such as the implementation of the detector on Silicon-on-Insulator technology, are proposed to overcome the limitations. Finally, some application demonstrators have been realized. Other applications that could benefit from the detector are suggested, such as digital applications taking advantage of the latching behavior of the device, and a Photoplethysmography (PPG) system that uses a PLL-based control loop to minimize the emitting LED-current

Sensor de imagen CMOS con detección de color sensible a la polarización

El constante crecimiento del mercado de dispositivos móviles con capacidad para capturar imágenes digitales ha impulsado considerablemente el uso de sensores de imagen a color basados en tecnología CMOS. Los métodos más utilizados para la separación de colores en estos sensores se diferencian en cuanto al uso o no de filtros. En los sistemas con filtros, los arreglos de filtros de color se disponen sobre la superficie del sensor de manera que la señal generada por cada pixel sea proporcional a la componente de uno de tres colores, mayormente rojo, verde o azul. Los filtros se ordenan según un patrón predefinido, y la componente de cada color en cada pixel se determina mediante un esquema de interpolación. El método de separación de colores sin filtro consiste en el apilamiento de tres fotodiodos en un mismo pixel. Su principio de funcionamiento se basa en la dependencia del coeficiente de absorción del silicio con la longitud de onda de la luz incidente. Las componentes de rojo, verde y azul se extraen directamente de cada pixel. Existen otros métodos de separación de colores que se basan en este mismo principio. El hecho de no utilizar filtros simplifica el proceso de fabricación de los sensores y elimina los errores derivados de la interpolación. En este trabajo se presenta un método de separación de colores pensado para su implementación en procesos de fabricación CMOS que no admiten el apilamiento de más de dos junturas p-n.Publicado en Terceras Jornadas de Investigación, Transferencia y Extensión. La Plata: Universidad Nacional de La Plata, 2015.Facultad de Ingenierí

CMOS SINGLE-PHOTON AVALANCHE DIODES AND MICROMACHINED OPTICAL FILTERS FOR INTEGRATED FLUORESCENCE SENSING

This dissertation presents a body of work that addresses the two most pressing challenges in the field of integrated fluorescence sensing, namely, the design of integrated optical sensors and the fabrication of high-rejection micro-scale optical filters. Two novel enabling technologies were introduced. They are: the perimeter-gated single-photon avalanche diode (PGSPAD), for on-chip photon counting, and the benzotriazole (BTA)-doped thin-film polymer filter, for on-chip ultraviolet light rejection. Experimental results revealed that the PGSPAD front-end, fabricated in a 0.5 μm standard mixed-signal CMOS process, had the capability of counting photons in the MHz regime. In addition, it was found that a perimeter gate, a structural feature used to suppress edge breakdown in the diode, also maximized the signal-to-noise-ratio in the high-count rate regime whereas it maximized sensitivity at low count rates. On the other hand, BTA-doped filters were demonstrated utilizing three commonly used polymers as hosts. The filters were patternable, utilizing the same procedures traditionally used to pattern the undoped polymer hosts, a key advantage for integration into microsystems. Filter performance was analyzed using a set of metrics developed for optoelectronic characterization of integrated fluorescence sensors; high rejection levels (nearing -40 dB) of UV light were observed in films of only 5 μm in thickness. Ultimately, BTA-doped filters were integrated into a portable sensor, and their use was demonstrated in two types of bioassays

Photodetectors based on low-dimensional materials and hybrid systems

Premi extraordinari doctorat UPC curs 2015-2016, àmbit de CiènciesIn the last decade, two-dimensional (2D) materials have attracted attention both in the nascent field of flexible nanotechnology as well as in more conventional semiconductor technol-ogies. Within the rapidly expanding portfolio of 2D materials, the group of semiconducting transition metal dichalcogenides (TMDCs) has emerged as an intriguing candidate for various optoelectronic applications. The atomically thin profile, favorable bandgap and outstanding electronic properties of TMDCs are unique features that can be explored and applied in novel photodetecting platforms. This thesis presents highly sensitive two-dimensional phototransistors made of sub-nanometre thick TMDC channels. Firstly, an encapsulation route is developed to address the detrimental and, to date, uncontrollable impact of atmospheric adsorbates, which severely deteriorate detector performance. The passivation scheme improves the transport properties of TMDCs, leading to high photoconductive gain with gate dependent responsivity of 10 -10^4 A/W throughout the visible, and temporal response down to 10 ms, which is suitable for imaging applications. The atomic device thickness yields ultra-low dark current operation and record detectivity of 10^11 - 10^12 Jones for TMDC-based detectors is achieved. The use of monolayer TMDCs, however, has disadvantages like limited spectral absorption due to the bandgap and limited absorption efficiency. In order to increase the absorption and to extend the spectral coverage, TMDC channels are covered with colloidal quantum dots to make hybrid phototransistors. This compelling synergy combines strong and size-tunable light absorption within the QD film, efficient charge separation at the TMDC-QD interface and fast carrier transport through the 2D channel. This results in large gain of 10^6 electrons per absorbed photon and creates the basis for extremely sensitive light sensing. Colloidal quan-tum dots are an ideal sensitizer, because their solution-processing and facile implementation on arbitrary substrates allows for low-cost fabrication of hybrid TMDC-QD devices. Moreover, the custom tailored bandgap of quantum dots provides the photodetector with wide spectral tunability. For photodetection in the spectral window of NIR/SWIR, which is still dominated by expensive and complex epitaxy-based technologies, these hybrid detectors have the potential to favorably compete with commercially available systems. The interface of the TMDC-QD hybrid is of paramount importance for sensitive detector operation. A high density of trap states at the interface is shown to be responsible for inefficient gate-control over channel conductivity, which leads to high dark currents. To maintain the unique electrical field-effect modulation in TMDCs upon deposition of colloidal quantum dots, a passivation route of the interface with semiconducting metal-oxide films is developed. The buffer-layer material is selected such that charge transfer from QDs into the channel is favored. The retained field-effect modulation with a large on/off ratio allows operation of the phototransistor at significantly lower dark currents than non-passivated hybrids. A TMDC-QD phototransistor with an engineered interface that exhibits detectivity of 10^12 - 10^13 Jones and response times of 12 ms and less is reported. In summary, this work showcases prototype photodetectors made of encapsulated 2D TMDCs and TMDC-QD hybrids. Plain TMDC-detectors have potential for application as flexible and semi-transparent detector platforms with high sensitivity in the visible. The hybrid TMDC-QD device increases its spectral selectivity to the NIR/SWIR due to the variable absorption of the sensitizing quantum dots and reaches compelling performance thanks to im-proved light-matter interaction and optimized photocarrier generation.En la última década ha surgido un gran interés por los materiales bidimensionales (2D) tanto para las tecnologías emergentes de dispositivos flexibles, como para las tecnologías de semiconductores tradicionales. Dentro del creciente catálogo de materiales 2D, los semiconductores basados en dicalcogenuros de metales de transición (DCMTs) han surgido como candidatos para aplicaciones optoelectrónicas. Sus características únicas, tales como grosor atómico, banda prohibida y propiedades electrónicas pueden ser examinadas y aplicadas en nuevas plataformas de fotodetección. En esta tesis se presentan nuevos fototransistores bidimensionales ultrasensibles basados en canales de DCMTs subnanométricos. Se presenta una ruta de encapsulación para intentar solucionar el impacto negativo, e incontrolable hasta la fecha, producido por la adsorción de sustancias atmosféricas que degradan el funcionamiento de los detectores. Este proceso mejora el transporte en los DCMTs dando lugar a una gran ganancia fotoconductora, una respuesta, dependiente de la tensión aplicada en el gate, de 10-10^4 A/W en el visible y una respuesta temporal de tan solo 10 ms, todo ello adecuado para aplicaciones de imagen. El grosor atómico de los dispositivos da lugar a corrientes de oscuridad muy bajas y una detectividad de 10^11-10^12 Jones. Sin embargo, el uso de monocapas de DCMTs presenta ciertas desventajas como por ejem-plo una eficiencia en la absorción baja. Con el fin de mejorar la absorción, los canales de DCMTs se han recubierto con puntos cuánticos (QDs) para fabricar fototransistores híbridos. Esta sinergia combina la alta absorción de los QDs, una eficiente separación de cargas en la interfaz DCMT-QD y un rápido transporte de cargas a través del canal 2D. Todo esto resulta en una ganancia de 10^6 electrones por fotón absorbido y crea la base para sensores de luz extremadamente sensibles. Los puntos cuánticos coloidales son sensibizadores ideales ya que su procesado en disolución y su fácil incorporación sobre cualquier sustrato permiten la fabricación de sistemas híbridos DCMT-QD a bajo coste. Además, la posibilidad de modifi-car la banda prohibida, ofrecida por los QDs, proporciona al fotodetector una amplia respuesta espectral. Para fotodetección en la ventana espectral del infrarrojo cercano (NIR/SWIR), estos detectores híbridos presentan el potencial de competir favorablemente con los sistemas comerciales disponibles. La interfaz entre el híbrido DCMT-QD es de la mayor importancia para la sensibilidad del detector. Se ha demostrado que una alta densidad de trampas en la interfaz es la responsable del ineficiente control mediante el gate de la conductividad del canal, dando lugar a corrientes de oscuridad muy altas. Para mantener la excepcional modulación de efecto campo aún después de la deposición de los QDs, se ha desarrollado una ruta de pasivación de la interfaz con óxidos metálicos semiconductores. El material de esta capa amortiguadora (buffer) es seleccionado de tal manera que permita la transferencia de cargas desde los puntos cuánticos hasta el canal DCMT. Esto retiene la modulación de efecto campo con una relación encendido/apagado muy alta, permitiendo el funcionamiento del fototransistor con corrientes de oscuridad significativamente menores que las de los híbridos sin pasivar. Así, se presenta un fototransistor híbrido DCMT-QD, con una interfaz cuidadosamente diseñada, que exhibe una detectividad de 10^12-10^13 Jones. En resumen, este trabajo presenta unos prototipos de fotodetectores basados en DCMT 2D encapsulados y en híbridos DCMT-QD. Los fotodetectores basados en DCMT simples presentan potencial para su aplicación en detectores flexibles y semitransparentes, con gran sensibilidad en el visible. Los híbridos DCMT-QD amplían la selectividad espectral al infrarrojo cercano gracias a la absorción variable ofrecida por los puntos cuánticos y alcanzan un muy interesante rendimiento gracias a una mejor interacción luz-materia.Award-winningPostprint (published version

Electronic Nanodevices

The start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10 nm technologies. The new phenomena and issues as well as the technological challenges of the fabrication and manipulation at the nanoscale have spurred an intense theoretical and experimental research activity. New device structures, operating principles, materials, and measurement techniques have emerged, and new approaches to electronic transport and device modeling have become necessary. Examples are the introduction of vertical MOSFETs in addition to the planar ones to enable the multi-gate approach as well as the development of new tunneling, high-electron mobility, and single-electron devices. The search for new materials such as nanowires, nanotubes, and 2D materials for the transistor channel, dielectrics, and interconnects has been part of the process. New electronic devices, often consisting of nanoscale heterojunctions, have been developed for light emission, transmission, and detection in optoelectronic and photonic systems, as well for new chemical, biological, and environmental sensors. This Special Issue focuses on the design, fabrication, modeling, and demonstration of nanodevices for electronic, optoelectronic, and sensing applications

Nanophotonic filters for digital imaging

There has been an increasing demand for low cost, portable CMOS image sensors because of increased integration, and new applications in the automotive, mobile communication and medical industries, amongst others. Colour reproduction remains imperfect in conventional digital image sensors, due to the limitations of the dye-based filters. Further improvement is required if the full potential of digital imaging is to be realised. In alternative systems, where accurate colour reproduction is a priority, existing equipment is too bulky for anything but specialist use. In this work both these issues are addressed by exploiting nanophotonic techniques to create enhanced trichromatic filters, and multispectral filters, all of which can be fabricated on-chip, i.e. integrated into a conventional digital image sensor, to create compact, low cost, mass produceable imaging systems with accurate colour reproduction. The trichromatic filters are based on plasmonic structures. They exploit the excitation of surface plasmon resonances in arrays of subwavelength holes in metal films to filter light. The currently-known analytical expressions are inadequate for optimising all relevant parameters of a plasmonic structure. In order to obtain arbitrary filter characteristics, an automated design procedure was developed that integrated a genetic algorithm and 3D finite-difference time-domain tool. The optimisation procedure's efficacy is demonstrated by designing a set of plasmonic filters that replicate the CIE (1931) colour matching functions, which themselves mimic the human eye's daytime colour response. The best designs were fabricated and demonstrated a least-mean-square error, in comparison to the desired colour matching functions, of 6.37*10^3, 2.34*10^3 and 11.10*10^3 for the red, green, and blue filters respectively. Notably the spectrum for the red filter contained a double peak, as present in the corresponding colour matching function. Such dual peak behaviour cannot be achieved using a single current dye-based filter. The filters retain the same layer thickness for all structures so they can be defined in a single lithography step. A new approach to enable the fabrication of a multispectral filter array on a CMOS imager is also presented. This combines a Fabry-Perot filter with effective medium theory (EMT) to enable the fabrication of multiple filters in a single cavity length via lithographic tuning of the filter passband. Two approaches are proposed; air-filled nanostructures and dielectric backfilled nanostructures. The air-filled approach is demonstrated experimentally producing three filters with FWHM of 60 - 64 nm. Using the backfilled design, and incorporating a highindex cavity material, a set of twenty three narrowband filters, with a FWHM of 22 - 46nm is demonstrated. A virtual image reproduction process was developed to quantify the image reproduction performance of both the plasmonic and Fabry-Perot filter sets. A typical rgb dye-based filter set used in conventional imagers achieves a mean colour error of 2.711, whereas the experimental data from the plasmonic filters achieves an error of 2.222 which demonstrated a slight improvement in colour reproduction. The multispectral filter set developed in this work performed even better, with 4 filters giving an error of 0.906, 10 filters an error of 0.072 and continued improvement in the colour error reaching 0.047 for 23 filters. All the filter sets proposed are fully compatible with the CMOS process so as to enable direct integration onto CMOS image sensors in industrial foundries in future. The performance of the presented filters also suggest new compact applications in art reproduction, agricultural monitoring and medical imaging