4,436 research outputs found

    Product assurance technology for custom LSI/VLSI electronics

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    The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

    Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells

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    The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors. The use of new production processes introduces a set of parasitic effects that gain more and more importance with the scaling down of the technology. In particular, even small variations of parasitic capacitances in CMOS devices are expected to become an additional source of faulty behaviors in future technologies. This paper analyzes and compares the effect of parasitic capacitance variations in a SRAM memory circuit realized with 65 nm and 32 nm predictive technology model

    Dynamic Voltage Scaling Aware Delay Fault Testing

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    The application of Dynamic Voltage Scaling (DVS) to reduce energy consumption may have a detrimental impact on the quality of manufacturing tests employed to detect permanent faults. This paper analyses the influence of different voltage/frequency settings on fault detection within a DVS application. In particular, the effect of supply voltage on different types of delay faults is considered. This paper presents a study of these problems with simulation results. We have demonstrated that the test application time increases as we reduce the test voltage. We have also shown that for newer technologies we do not have to go to very low voltage levels for delay fault testing. We conclude that it is necessary to test at more than one operating voltage and that the lowest operating voltage does not necessarily give the best fault cover

    Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

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    Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

    Automating defects simulation and fault modeling for SRAMs

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    The continues improvement in manufacturing process density for very deep sub micron technologies constantly leads to new classes of defects in memory devices. Exploring the effect of fabrication defects in future technologies, and identifying new classes of realistic functional fault models with their corresponding test sequences, is a time consuming task up to now mainly performed by hand. This paper proposes a new approach to automate this procedure. The proposed method exploits the capabilities of evolutionary algorithms to automatically identify faulty behaviors into defective memories and to define the corresponding fault models and relevant test sequences. Target defects are modeled at the electrical level in order to optimize the results to the specific technology and memory architecture

    Optimization of Cell-Aware Test

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    Optimization of Cell-Aware Test

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    Reducing Library Characterization Time for Cell-aware Test while Maintaining Test Quality

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    Cell-aware test (CAT) explicitly targets faults caused by defects inside library cells to improve test quality, compared with conventional automatic test pattern generation (ATPG) approaches, which target faults only at the boundaries of library cells. The CAT methodology consists of two stages. Stage 1, based on dedicated analog simulation, library characterization per cell identifies which cell-level test pattern detects which cell-internal defect; this detection information is encoded in a defect detection matrix (DDM). In Stage 2, with the DDMs as inputs, cell-aware ATPG generates chip-level test patterns per circuit design that is build up of interconnected instances of library cells. This paper focuses on Stage 1, library characterization, as both test quality and cost are determined by the set of cell-internal defects identified and simulated in the CAT tool flow. With the aim to achieve the best test quality, we first propose an approach to identify a comprehensive set, referred to as full set, of potential open- and short-defect locations based on cell layout. However, the full set of defects can be large even for a single cell, making the time cost of the defect simulation in Stage 1 unaffordable. Subsequently, to reduce the simulation time, we collapse the full set to a compact set of defects which serves as input of the defect simulation. The full set is stored for the diagnosis and failure analysis. With inspecting the simulation results, we propose a method to verify the test quality based on the compact set of defects and, if necessary, to compensate the test quality to the same level as that based on the full set of defects. For 351 combinational library cells in Cadence’s GPDK045 45nm library, we simulate only 5.4% defects from the full set to achieve the same test quality based on the full set of defects. In total, the simulation time, via linear extrapolation per cell, would be reduced by 96.4% compared with the time based on the full set of defects
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