DESIGN AND FABRICATION OF ON CHIP MICROWAVE PULSE POWER DETECTORS

On-chip microwave pulse-power detectors are promising devices for many electrical systems of both military and commercial applications. Most research in microwave power detector design have been focused on thermal power detectors, such as thermistors or thermocouples, due to their wide dynamic range and high frequency operation. However, due to their slow thermal response time, it is impossible to detect microwave pulses with a few micro or sub-micro seconds of pulse width. Schottky diode power detectors are the best candidates for this purpose due to their fast pulse response time and small size. We have developed a means for fabricating Schottky diodes as part of any Complementary-Metal-Oxide-Semiconductor (CMOS) process by modifying the layout file. CMOS Schottky diodes were added at pre-selected locations through a CMOS process. We have also developed a process for adding or deleting Schottky diodes on a CMOS fabricated chip by using Focused Ion Beam (FIB). FIB milling and ion induced deposition were used for adding or deleting Schottky diodes at any desired location on a CMOS-fabricated chip as a post-CMOS process. Spice models of CMOS Schottky diodes were developed and used for designing the RF front end circuits in passive RF circuits. MOSFET based RF pulsed power detector circuits were also designed and fabricated. Fabricated power detectors were tested under direct injection and radiation of microwave pulse signals. Measured results for fabricated CMOS Schottky diodes, FIB Schottky diodes and MOSFET half-wave and full-wave rectifier circuits are summarized in a table with the pulse response time, the dynamic range, the sensitivity, and the frequency response to determine which power detector is the best choice for detecting a specific source signal

Photodetectors

In this book some recent advances in development of photodetectors and photodetection systems for specific applications are included. In the first section of the book nine different types of photodetectors and their characteristics are presented. Next, some theoretical aspects and simulations are discussed. The last eight chapters are devoted to the development of photodetection systems for imaging, particle size analysis, transfers of time, measurement of vibrations, magnetic field, polarization of light, and particle energy. The book is addressed to students, engineers, and researchers working in the field of photonics and advanced technologies

15 Gb/s 50-cm wireless link using a high power compact III-V 84 GHz transmitter

This paper reports on a 15-Gb/s wireless link that employs a high-power resonant tunneling diode (RTD) oscillator as a transmitter (Tx). The fundamental carrier frequency is 84 GHz and the maximum output power is 2 mW without any power amplifier. The reported performance is over a 50-cm link, with simple amplitude shift keying modulation utilized. The 15-Gb/s data link shows correctable bit error rate (BER) of 4.1 x 10⁻³, while the lower data rates of 10 and 5 Gb/s show a BER of 3.6 x 10⁻⁴ and 1.0 x 10⁻⁶, respectively. These results demonstrate that the RTD Tx is a promising candidate for the next-generation low-cost, compact, ultrahigh data rates wireless communication systems

High efficiency and high frequency resonant tunneling diode sources

Terahertz (THz) technology has been generating a lot of interest due to the numerous potential applications for systems working in this previously unexplored frequency range. THz radiation has unique properties suited for high capacity communication systems and non-invasive, non-ionizing properties that when coupled with a fairly good spatial resolution are unparalleled in its sensing capabilities for use in biomedical, industrial and security fields. However, in order to achieve this potential, effective and efficient ways of generating THz radiation are required. Devices which exhibit negative differential resistance (NDR) in their current-voltage (I – V) characteristics can be used for the generation of these radio frequency (RF) signals. Among them, the resonant tunnelling diode (RTD) is considered to be one of the most promising solid-state sources for millimeter and submillimeter wave radiation, which can operate at room temperature. However, the main limitations of RTD oscillators are producing high output power and increasing the DC-to-RF conversion efficiency. Although oscillation frequencies of up to 1.98 THz have been already reported, the output power is in the range of micro-Watts and conversion efficiencies are under 1 %. This thesis describes the systematic work done on the design, fabrication, and characterization of RTD-based oscillators in monolithic microwave/millimeter-wave integrated circuits (MMIC) that can produce high output power and have a high conversion efficiency at the same time. At the device level, parasitic oscillations caused by the biasing line inductance when the diode is biased in the NDR region prevents accurate characterization and compromises the maximum RF power output. In order to stabilise the NDR devices, a common method is the use of a suitable resistor connected across the device, to make the differential resistance in the NDR region positive. However, this approach severely hinders the diode’s performance in terms of DC-to-RF conversion efficiency. In this work, a new DC bias decoupling circuit topology has been developed to enable accurate, direct measurements of the device’s NDR characteristic and when implemented in an oscillator design provides over a 10-fold improvement in DC-to-RF conversion efficiency. The proposed method can be adapted for higher frequency and higher power devices and could have a major impact with regards to the adoption of RTD technology, especially for portable devices where power consumption must be taken into consideration. RF and DC characterization of the device were used in the realization on an accurate large-signal model of the RTD. S-parameter measurements were used to determine an accurate small-signal model for the device’s capacitance and inductance, while the extracted DC characteristics where used to replicate the I-V characteristics. The model is able to replicate the non-stable behavior of RTD devices when biased in the NDR region and the RF characteristics seen in oscillator circuits. It is expected that the developed model will serve in future optimization processes of RTD devices in millimeter and submillimeter wave applications. Finally, a wireless data transmission link operating in the Ka-band (26.5 GHz – – 40 GHz) using two RTDs operating as a transmitter and receiver is presented in this thesis. Wireless error-free data transfer of up to 2 gigabits per second (Gbit/s) was achieved at a transmission distance of 15 cm. In summary, this work makes important contributions to the accurate characterization, and modeling of RTDs and demonstrates the feasibility of this technology for use in future portable wireless communication systems and imaging setups

Plasmonic Terahertz Detector Based on Asymmetric Silicon Field-Effect Transistor for Real-Time Terahertz Imaging System

Department of Electrical EngineeringTerahertz (THz) technology has a great potential application owing to the unique properties of THz wave that has both permeability and feature of straight. Among the various technology in THz frequency range, THz imaging technology is very promising and attractive owing to harmlessness in human body by very low energy. In particular, for real-time THz imaging detectors, field-effect transistor (FET)-based THz detectors are now being intensively developed in multi-pixel array configuration by exploiting the silicon (Si) technology advantages of low-cost and high density integration. FET-based plasmonic wave detection mechanism, which is not limited by cut-off frequency as in transit-mode, has attractive features such as enhanced responsivity (Rv) according to frequency increase in THz range and robustness to high THz input power. To analyze the operation principle of plasmonic THz detector, an analytical device model has been implemented in terms of device physics. The non-resonant and ???overdamped??? plasma-wave behaviors have been modeled by introducing a quasi-plasma electron charge box as a two-dimensional electron gas (2DEG) in the channel region only around the source side of Si FETs. Based on the coupled non-resonant plasma-wave physics and continuity equation on the technology computer-aided design (TCAD) platform, the alternate-current (ac) signal as an incoming THz wave radiation successfully induced a direct-current (dc) drain-to-source output voltage as a detection signal in a sub-THz frequency regime under the asymmetric boundary conditions between source and drain. The significant effects of asymmetric source and drain structure, channel shape on the charge asymmetry and performance enhancement have been analytically investigated based on non-resonant plasmonic THz detection theory. By designing and fabricating an asymmetric transistor integrated with antenna, more enhanced channel charge asymmetry has been obtained for enhanced detection response. Through verification of the advanced non-quasi-static (NQS) compact model, the intrinsic FET delay and total detector delay in THz plasmonic detection are successfully characterized and are small enough to guarantee a real-time operating detector. These results can provide that the real-time THz imaging of moving objects has been experimentally demonstrated based on plasmonic 1x200 array scanner by using the high/fast detecting performance asymmetric FET and multiplexer/amplifier circuits. The highly-enhanced Rv and reduced noise equivalent power (NEP) have been demonstrated by exploiting monolithic transistor-antenna device considering impedance matching between transistor and antenna. This record-high enhancement is due to antenna mismatching and feeding line loss reduction as well as the enhanced charge asymmetry in the proposed monolithic transistor-antenna device. Therefore, high-performance plasmonic THz detector based on asymmetric Si FET can compete as commercial THz detector by taking advantages of monolithic device technology for real-time THz imaging system.ope

Exploration of Nonlinear Devices and Nonlinear Transmission Line Techniques for Microwaves Applications

RÉSUMÉ Les systèmes de communication modernes dépendent fortement des circuits non linéaires, tels que les amplificateurs de puissance (PA), les mélangeurs, les multiplicateurs, les oscillateurs, les commutateurs, etc., qui sont construits à partir de composants non linéaires passifs (comme des diodes) ou actifs (par exemple des transistors). Cette thèse étudie les dispositifs non linéaires passifs traditionnels et émergents, ainsi que les techniques de lignes de transmission non linéaires (NLTL). Plusieurs de leurs applications micro-ondes ont également été étudiées, y compris la récupération d'énergie sans fil, la synthèse d’impédance électronique et l’adaptation d’impédance bidimensionnelle (inductive et capacitive). Dans le chapitre 1, sont d'abord étudiés les dispositifs non linéaires traditionnels résistifs, capacitifs et inductifs. Les dispositifs non linéaires émergents, y compris les dispositifs MEMS et la spindiode, sont ensuite explorés. La construction physique de base, les principes de fonctionnement, ainsi que les caractéristiques et applications pour divers types de dispositifs non linéaires sont expliqués et comparés. Les lignes de transmission non-linéaires (NLTL) traditionnelles utilisant des dispositifs non linéaires capacitifs (varactor, BST etc.) ou inductifs (ferrite saturée), et la technique hybride NLTL émergente utilisant à la fois des dispositifs non linéaires capacitifs et inductifs sont également étudiées. Le chapitre 2 examine les techniques de conversion d'énergie micro-ondes à courant-continu de faible puissance à la fine pointe de la technologie. Une image complète de l'état de l'art sur cet aspect est donnée graphiquement. Elle compare différentes technologies telles que le transistor, la diode et les technologies CMOS. Depuis le tout début des techniques intégrées RF et micro-ondes et de la récupération d'énergie, les diodes Schottky ont été le plus souvent utilisées dans les circuits de mélange et de redressement. Cependant, dans des applications spécifiques de récupération d'énergie, la technique des diodes Schottky ne parvient pas à fournir une efficacité satisfaisante de conversion RF-dc. Suite aux limitations mises en évidence des dispositifs actuels, ce travail introduit, pour la première fois, un composant non linéaire pour une redressement de faible puissance, basé sur une découverte récente en spintronique, à savoir, la jonction tunnel magnétique, parfois appelée spindiode. Un modèle équivalent de spindiode est développé pour décrire le comportement en fréquence.----------ABSTRACT Modern communication systems are heavily dependent on nonlinear circuits, such as PA, mixer, multiplier, oscillator, switch, etc., the core of which are either passive nonlinear elements and devices (e.g. diodes) or active nonlinear components and devices (e.g. transistors). This thesis aims at investigating a number of traditional and emerging passive nonlinear devices and nonlinear transmission line (NLTL) techniques, and developing four of their microwave applications such as wireless power harvesting, electronic impedance synthesizer, and two-dimensional tuning circuit. In Chapter 1, traditional nonlinear devices in terms of the categories of resistive, capacitive and inductive are firstly investigated. Emerging nonlinear devices including microelectromechanical system (MEMS) devices and spindiodes are then explored. The basic physical constructions, operation principles, and characteristics as well as applications of various types of nonlinear devices are explained and compared. Traditional NLTL techniques make use of either capacitive nonlinear devices (varactor, BST etc.) or inductive nonlinear devices (saturated ferrite), and emerging hybrid NLTL techniques are also studied through the deployment of both nonlinear capacitive and inductive devices. Chapter 2 examines the state-of-the-art low-power microwave-to-dc energy conversion techniques. A comprehensive picture of the state-of-the-art on this aspect is given graphically, which compares different technologies such as transistor, diode, and CMOS schemes. Since the very beginning of RF and microwave integrated techniques and energy harvesting, Schottky diodes as the undisputable dominant choice, have been widely used in mixing and rectifying circuits. However, in specific μW power-harvesting applications, the Schottky diode technique seemingly fails to provide a satisfactory RF–dc conversion. Subsequent to the highlighted limitations of current devices, this work introduces, for the first time, a nonlinear component for low-power rectification based on a recent discovery in spintronics, namely, the Magnetic Tunnel Junction, also called spindiode. An equivalent model of spindiode is developed to describe the frequency behavior. Full parametric studies show that the interfacial capacitance, rather than the geometric capacitance, as it is usually the case for diode, plays a crucial role in the drop of efficiency in microwave frequency applications

Ge-Photodetectors for Si-Based Optoelectronic Integration

High speed photodetectors are a key building block, which allow a large wavelength range of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3–1.55 μm. Such devices are key components in several applications such as local area networks, board to board, chip to chip and intrachip interconnects. Recent technological achievements in growth of high quality SiGe/Ge films on Si wafers have opened up the possibility of low cost Ge-based photodetectors for near infrared communication bands and high resolution spectral imaging with high quantum efficiencies. In this review article, the recent progress in the development and integration of Ge-photodetectors on Si-based photonics will be comprehensively reviewed, along with remaining technological issues to be overcome and future research trends

Accurate characterisation of Resonant Tunnelling Diodes for high-frequency applications

Recent scientific advancements regarding the generation and detection of terahertz (THz) radiation have led to a rapid increase in research interest in this frequency band in the context of its numerous potential applications including high-speed wireless communications, biomedical diagnostics, security screening and material science. Various proposed solutions have been investigated in the effort to bridge this relatively unexplored region of the electromagnetic spectrum, and thus exploit its untapped potential. Among them, the resonant tunnelling diode (RTD) has been demonstrated as the fastest electronic device with its room temperature operation extending into the THz range. The RTD exhibits a negative differential resistance (NDR) region in its I-V characteristics, with this feature being key to its capabilities. Even though the unique capabilities of RTD devices have been experimentally proven in the realisation of compact NDR oscillators and detectors, with fundamental frequencies of about 2 THz, and high-sensitivity detectors up to 0.83 THz, the reliable design procedures and methodologies of RTD-based circuits are yet to be fully developed. In this regard, significant effort has been devoted primarily to the accurate theoretical description of the high-frequency behaviour of RTDs, using various small-signal equivalent circuit models. However, many of these models have had either limited or no experimental validation, and so a robust and reliable RTD device model is desirable. The aim of this thesis is to describe a systematic approach regarding the design, fabrication and characterisation of RTD devices, providing a universal methodology to accurately determine their radio-frequency (RF) behaviour, and so this way enable a consistent integrated circuit design procedure for high-frequency circuits. A significant challenge in the modelling of RTD devices is represented by the presence of parasitic bias oscillations within the NDR region. This has been identified as one of the main restricting factors with regards to the accurate high-frequency characterisation of this operating region. The common approach to overcoming this limitation is through a stabilising technique comprising of an external shunt-resistor network. This approach has been successfully demonstrated to suppress bias oscillations in RTD-based circuits which require operation within the NDR region. However, the introduction of the additional circuit component associated with this method increases the complexity of the de-embedding procedure of the extrinsic parasitic elements, rendering the overall device characterisation generally difficult at high-frequencies. In this work, a novel on-wafer bond-pad and shunt resistor network de-embedding technique was developed in order to facilitate the characterisation of RTDs throughout the complete bias range, without limitation to device sizing or frequency, under a stable operating regime. The procedure was demonstrated to accurately determine the circuit high-frequency behaviour of the RTD device from S-parameter measurements up to 110 GHz. The universal nature of this procedure allows it to be easily adapted to accommodate higher complexity stabilising networks configuration or different bond-pad geometries. Furthermore, the de-embedding method has also enabled the development of a novel quasi-analytical procedure for high accuracy extraction of the device equivalent circuit parameters, which is expected to provide a strong experimental foundation for the further establishment of a universal RTD RF model. The applicability of the developed high-frequency model, which can be easily scaled for various device sizes, together with the measured RTD I-V characteristics was further demonstrated in the development of a non-linear model, which was integrated in a commercial simulator, the Advanced Design Systems (ADS) software from Keysight Technologies. From an application perspective, the model was used in the design of an RTD as a square-law detector for high-frequency data transmission systems. The simulated detector performance was validated experimentally using an RTD-based transmitter in the W-band (75 – 110 GHz) up to 4 Gbps (error free transmission: BER < 10-10 in a waveguide connection), and in the Ka-band (26.5 – 50 GHz) up to 2.4 Gbps (error free transmission in a wireless data link), which demonstrated the accuracy of the developed RTD modelling approach. Lastly, a sensitivity analysis of the RTD-based detector within the Ka-band showed a superior RTD performance over commercially available solutions, with a peak (corrected) detector responsivity of 13.48 kV/W, which is a factor of >6 better compared to commercially available Schottky barrier diode (SBD) detectors

DEVELOPMENT OF A SIMPLIFIED, MASS PRODUCIBLE HYBRIDIZED AMBIENT, LOW FREQUENCY, LOW INTENSITY VIBRATION ENERGY SCAVENGER (HALF-LIVES)

Scavenging energy from environmental sources is an active area of research to enable remote sensing and microsystems applications. Furthermore, as energy demands soar, there is a significant need to explore new sources and curb waste. Vibration energy scavenging is one environmental source for remote applications and a candidate for recouping energy wasted by mechanical sources that can be harnessed to monitor and optimize operation of critical infrastructure (e.g. Smart Grid). Current vibration scavengers are limited by volume and ancillary requirements for operation such as control circuitry overhead and battery sources. This dissertation, for the first time, reports a mass producible hybrid energy scavenger system that employs both piezoelectric and electrostatic transduction on a common MEMS device. The piezoelectric component provides an inherent feedback signal and pre-charge source that enables electrostatic scavenging operation while the electrostatic device provides the proof mass that enables low frequency operation. The piezoelectric beam forms the spring of the resonant mass-spring transducer for converting vibration excitation into an AC electrical output. A serially poled, composite shim, piezoelectric bimorph produces the highest output rectified voltage of over 3.3V and power output of 145uW using ¼ g vibration acceleration at 120Hz. Considering solely the volume of the piezoelectric beam and tungsten proof mass, the volume is 0.054cm3, resulting in a power density of 2.68mW/cm3. Incorporation of a simple parallel plate structure that provides the proof mass for low frequency resonant operation in addition to cogeneration via electrostatic energy scavenging provides a 19.82 to 35.29 percent increase in voltage beyond the piezoelectric generated DC rails. This corresponds to approximately 2.1nW additional power from the electrostatic scavenger component and demonstrates the first instance of hybrid energy scavenging using both piezoelectric and synchronous electrostatic transduction. Furthermore, it provides a complete system architecture and development platform for additional enhancements that will enable in excess of 100uW additional power from the electrostatic scavenger