10,623 research outputs found

    A Radiation hard bandgap reference circuit in a standard 0.13um CMOS Technology

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    With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased radiation tolerance of MOS transistors. Combined with special layout techniques, this yields circuits with a high inherent robustness against X-rays and other ionizing radiation. In bandgap voltage references, the dominant radiation-susceptibility is then no longer associated with the MOS transistors, but is dominated by the diodes. This paper gives an analysis of radiation effects in both MOSdevices and diodes and presents a solution to realize a radiation-hard voltage reference circuit in a standard CMOS technology. A demonstrator circuit was implemented in a standard 0.13 m CMOS technology. Measurements show correct operation with supply voltages in the range from 1.4 V down to 0.85 V, a reference voltage of 405 mV 7.5 mV ( = 6mVchip-to-chip statistical spread), and a reference voltage shift of only 1.5 mV (around 0.8%) under irradiation up to 44 Mrad (Si)

    A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

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    An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

    Embedded 5V-to-3.3V Voltage Regulator for Supplying Digital ICs in 3.3V CMOS Technology

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    A fully integrated 5 V-to-3.3 V supply voltage regulator for application in digital IC's has been designed in a 3.3 V 0.5 μm CMOS process. The regulator is able to deliver peak current transients of 300 mA, while the output voltage remains within a margin of 10% around the nominal value. The circuit draw's a static quiescent current of 750 μA during normal operation, and includes a power-down mode with only 10 μA current consumption. The die area is 1 mm2, and can be scaled proportional to the maximum peak current. Special precautions have been taken to allow 5 V in the 3.3 V process

    A sub-1-V Bandgap Voltage Reference in 32nm FinFET Technology

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    The bulk CMOS technology is expected to scale down to about 32nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a conventional bulk MOS transistor [1]. Bandgap reference circuits cannot be directly ported from bulk CMOS technologies to SOI FinFET technologies, because both conventional diodes cannot be realized in thin SOI layers and also, area-efficient resistors are not readily available in processes with only metal(lic) gates. In this paper, a sub-1V bandgap reference circuit is implemented in a 32nm SOI FinFET technology, with an architecture that significantly reduces the required total resistance value

    Mixed-signal CNN array chips for image processing

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    Due to their local connectivity and wide functional capabilities, cellular nonlinear networks (CNN) are excellent candidates for the implementation of image processing algorithms using VLSI analog parallel arrays. However, the design of general purpose, programmable CNN chips with dimensions required for practical applications raises many challenging problems to analog designers. This is basically due to the fact that large silicon area means large development cost, large spatial deviations of design parameters and low production yield. CNN designers must face different issues to keep reasonable enough accuracy level and production yield together with reasonably low development cost in their design of large CNN chips. This paper outlines some of these major issues and their solutions
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