A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

Differential temperature sensors: Review of applications in the test and characterization of circuits, usage and design methodology

Differential temperature sensors can be placed in integrated circuits to extract a signature ofthe power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper firstdiscusses the singularity that differential temperature sensors provide with respect to other sensortopologies, with circuit monitoring being their main application. The paper focuses on the monitoringof radio-frequency analog circuits. The strategies to extract the power signature of the monitoredcircuit are reviewed, and a list of application examples in the domain of test and characterizationis provided. As a practical example, we elaborate the design methodology to conceive, step bystep, a differential temperature sensor to monitor the aging degradation in a class-A linear poweramplifier working in the 2.4 GHz Industrial Scientific Medical—ISM—band. It is discussed how,for this particular application, a sensor with a temperature resolution of 0.02 K and a high dynamicrange is required. A circuit solution for this objective is proposed, as well as recommendations for thedimensions and location of the devices that form the temperature sensor. The paper concludes with adescription of a simple procedure to monitor time variability.Postprint (published version

An Integrated Circuit Compatible Compact Package for Thermal Gas Flowmeters

An original packaging method suitable for integrated thermal mass flow sensors is presented. The method consists in the application of a plastic transparent adapter to the chip surface. The adapter is sealed to the chip surface by means of a thermal procedure. By this approach it is possible to selectively convey the fluid flow to reduced chip areas, avoiding contact with the pads. Fabrication and testing of a very compact flow sensor is described.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing

Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mra

A 10-bit Charge-Redistribution ADC Consuming 1.9 μW at 1 MS/s

This paper presents a 10 bit successive approximation ADC in 65 nm CMOS that benefits from technology scaling. It meets extremely low power requirements by using a charge-redistribution DAC that uses step-wise charging, a dynamic two-stage comparator and a delay-line-based controller. The ADC requires no external reference current and uses only one external supply voltage of 1.0 V to 1.3 V. Its supply current is proportional to the sample rate (only dynamic power consumption). The ADC uses a chip area of approximately 115--225 μm2. At a sample rate of 1 MS/s and a supply voltage of 1.0 V, the 10 bit ADC consumes 1.9 μW and achieves an energy efficiency of 4.4 fJ/conversion-step

A Fully Differential CMOS Potentiostat

A CMOS potentiostat for chemical sensing in a noisy environment is presented. The potentiostat measures bidirectional electrochemical redox currents proportional to the concentration of a chemical down to pico-ampere range. The fully differential architecture with differential recording electrodes suppresses the common mode interference. A 200μm×200μm prototype was fabricated in a standard 0.35μm standard CMOS technology and yields a 70dB dynamic range. The in-channel analog-to-digital converter (ADC) performs 16-bit current-tofrequency quantization. The integrated potentiostat functionality is validated in electrical and electrochemical experiments

The STAR MAPS-based PiXeL detector

The PiXeL detector (PXL) for the Heavy Flavor Tracker (HFT) of the STAR experiment at RHIC is the first application of the state-of-the-art thin Monolithic Active Pixel Sensors (MAPS) technology in a collider environment. Custom built pixel sensors, their readout electronics and the detector mechanical structure are described in detail. Selected detector design aspects and production steps are presented. The detector operations during the three years of data taking (2014-2016) and the overall performance exceeding the design specifications are discussed in the conclusive sections of this paper