Direct and Simultaneous Observation of Ultrafast Electron and Hole Dynamics in Germanium

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical/NIR pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by attosecond transient absorption spectroscopy (ATAS) in the extreme ultraviolet at the germanium M_{4,5}-edge (~30 eV). We decompose the ATAS spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8*10^{20}cm^{-3}. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first order electron and hole decay of ~1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with ATAS paves the way for investigating few to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.Comment: Includes Supplementary Informatio

Near-Field Microwave Microscopy of Materials Properties

Near-field microwave microscopy has created the opportunity for a new class of electrodynamics experiments of materials. Freed from the constraints of traditional microwave optics, experiments can be carried out at high spatial resolution over a broad frequency range. In addition, the measurements can be done quantitatively so that images of microwave materials properties can be created. We review the five major types of near-field microwave microscopes and discuss our own form of microscopy in detail. Quantitative images of microwave sheet resistance, dielectric constant, and dielectric tunability are presented and discussed. Future prospects for near-field measurements of microwave electrodynamic properties are also presented.Comment: 31 pages, 9 figures, lecture given at the 1999 NATO ASI on Microwave Superconductivity Changes suggested by editor, including full reference

Broadband Characterization of Dielectric Films for Power-Ground Decoupling

Abstract -We evaluated the dielectric permittivity and impedance characteristics of high dielectric constant polymer composite films. Such materials are being investigated by the electronic industry in response to the growing need for efficient integrated power-ground de-coupling capacitance in microwave circuits and fast switching devices. In order to extend the dielectric measurements to the microwave range, we developed an appropriate expression for the input admittance of a thin film capacitance terminating a coaxial line. T he theoretical model treats the capacitance as a distributed network and takes into consideration the wave propagation in the specimen section. The dielectric permittivity of several high dielectric constant materials for de-coupling capacitance applications was evaluated at frequencies of 100 MHz to 10 GHz, and the corresponding impedance characteristics were determined directly in time domain. Polymer resins filled with ferroelectric ceramics showed low impedance values and flat impedance characteristics over a broad frequency range, which makes these materials attractive for power-ground decoupling applications in high-speed electronic circuits

Challenges and Opportunities for Multi-functional Oxide Thin Films for Voltage Tunable Radio Frequency/Microwave Components

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges

Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies

To analyze the intrinsic dielectric performance of planar high-density capacitors at radio frequencies (RF), the dielectric losses need to be distinguished from the resistive electrode losses. The resistive losses of the electrodes at RF are de-embedded employing a linear regression procedure with partial compensation for distributed effects. We use tunable ferroelectric capacitors with a barium strontium titanate (BST) dielectric with an inner diameter d ≥ 8 μm on a silicon substrate. The de-embedding of the electrode losses has been successfully performed utilizing 1-Port RF measurement data from of an Advantest R3767CG vector network analyzer (VNA) in the frequency range of 10 MHz – 8 GHz

Superconducting Material Diagnostics using a Scanning Near-Field Microwave Microscope

We have developed scanning near-field microwave microscopes which can image electrodynamic properties of superconducting materials on length scales down to about 2 $\mu$m. The microscopes are capable of quantitative imaging of sheet resistance of thin films, and surface topography. We demonstrate the utility of the microscopes through images of the sheet resistance of a YBa2Cu3O7-d thin film wafer, images of bulk Nb surfaces, and spatially resolved measurements of Tc of a YBa2Cu3O7-d thin film. We also discuss some of the limitations of the microscope and conclude with a summary of its present capabilities.Comment: 6 pages with 9 figures, Proceedings of the Applied Superconductivity Conference 199

High efficiency and high frequency resonant tunneling diode sources

Terahertz (THz) technology has been generating a lot of interest due to the numerous potential applications for systems working in this previously unexplored frequency range. THz radiation has unique properties suited for high capacity communication systems and non-invasive, non-ionizing properties that when coupled with a fairly good spatial resolution are unparalleled in its sensing capabilities for use in biomedical, industrial and security fields. However, in order to achieve this potential, effective and efficient ways of generating THz radiation are required. Devices which exhibit negative differential resistance (NDR) in their current-voltage (I – V) characteristics can be used for the generation of these radio frequency (RF) signals. Among them, the resonant tunnelling diode (RTD) is considered to be one of the most promising solid-state sources for millimeter and submillimeter wave radiation, which can operate at room temperature. However, the main limitations of RTD oscillators are producing high output power and increasing the DC-to-RF conversion efficiency. Although oscillation frequencies of up to 1.98 THz have been already reported, the output power is in the range of micro-Watts and conversion efficiencies are under 1 %. This thesis describes the systematic work done on the design, fabrication, and characterization of RTD-based oscillators in monolithic microwave/millimeter-wave integrated circuits (MMIC) that can produce high output power and have a high conversion efficiency at the same time. At the device level, parasitic oscillations caused by the biasing line inductance when the diode is biased in the NDR region prevents accurate characterization and compromises the maximum RF power output. In order to stabilise the NDR devices, a common method is the use of a suitable resistor connected across the device, to make the differential resistance in the NDR region positive. However, this approach severely hinders the diode’s performance in terms of DC-to-RF conversion efficiency. In this work, a new DC bias decoupling circuit topology has been developed to enable accurate, direct measurements of the device’s NDR characteristic and when implemented in an oscillator design provides over a 10-fold improvement in DC-to-RF conversion efficiency. The proposed method can be adapted for higher frequency and higher power devices and could have a major impact with regards to the adoption of RTD technology, especially for portable devices where power consumption must be taken into consideration. RF and DC characterization of the device were used in the realization on an accurate large-signal model of the RTD. S-parameter measurements were used to determine an accurate small-signal model for the device’s capacitance and inductance, while the extracted DC characteristics where used to replicate the I-V characteristics. The model is able to replicate the non-stable behavior of RTD devices when biased in the NDR region and the RF characteristics seen in oscillator circuits. It is expected that the developed model will serve in future optimization processes of RTD devices in millimeter and submillimeter wave applications. Finally, a wireless data transmission link operating in the Ka-band (26.5 GHz – – 40 GHz) using two RTDs operating as a transmitter and receiver is presented in this thesis. Wireless error-free data transfer of up to 2 gigabits per second (Gbit/s) was achieved at a transmission distance of 15 cm. In summary, this work makes important contributions to the accurate characterization, and modeling of RTDs and demonstrates the feasibility of this technology for use in future portable wireless communication systems and imaging setups

Micro/Nano Structures and Systems

Micro/Nano Structures and Systems: Analysis, Design, Manufacturing, and Reliability is a comprehensive guide that explores the various aspects of micro- and nanostructures and systems. From analysis and design to manufacturing and reliability, this reprint provides a thorough understanding of the latest methods and techniques used in the field. With an emphasis on modern computational and analytical methods and their integration with experimental techniques, this reprint is an invaluable resource for researchers and engineers working in the field of micro- and nanosystems, including micromachines, additive manufacturing at the microscale, micro/nano-electromechanical systems, and more. Written by leading experts in the field, this reprint offers a complete understanding of the physical and mechanical behavior of micro- and nanostructures, making it an essential reference for professionals in this field