Breaking the challenge of signal integrity using time-domain spoof surface plasmon polaritons

In modern integrated circuits and wireless communication systems/devices, three key features need to be solved simultaneously to reach higher performance and more compact size: signal integrity, interference suppression, and miniaturization. However, the above-mentioned requests are almost contradictory using the traditional techniques. To overcome this challenge, here we propose time-domain spoof surface plasmon polaritons (SPPs) as the carrier of signals. By designing a special plasmonic waveguide constructed by printing two narrow corrugated metallic strips on the top and bottom surfaces of a dielectric substrate with mirror symmetry, we show that spoof SPPs are supported from very low frequency to the cutoff frequency with strong subwavelength effects, which can be converted to the time-domain SPPs. When two such plasmonic waveguides are tightly packed with deep-subwavelength separation, which commonly happens in the integrated circuits and wireless communications due to limited space, we demonstrate theoretically and experimentally that SPP signals on such two plasmonic waveguides have better propagation performance and much less mutual coupling than the conventional signals on two traditional microstrip lines with the same size and separation. Hence the proposed method can achieve significant interference suppression in very compact space, providing a potential solution to break the challenge of signal integrity

iBROW – innovative ultra-BROadband ubiquitous wireless communications through terahertz transceivers

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III-V-on-silicon photonic devices for optical communication and sensing

In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm

Substrate Integrated Bragg Waveguide: an Octave-bandwidth Single-mode Functional Transmission-Line for Millimeter-Wave and Terahertz Applications

We demonstrate an air-core single-mode hollow waveguide that uses Bragg reflector structures in place of the vertical metal walls of the standard rectangular waveguide or via holes of the so-called substrate integrated waveguide. The high-order modes in the waveguide are substantially suppressed by a modal-filtering effect, making the waveguide operate in the fundamental mode over more than one octave. Numerical simulations show that the propagation loss of the proposed waveguide can be lower than that of classic hollow metallic rectangular waveguides at terahertz frequencies, benefiting from a significant reduction in Ohmic loss. To facilitate fabrication and characterization, a proof-of-concept 20 to 45 GHz waveguide is demonstrated, which verifies the properties and advantages of the proposed waveguide. A zero group-velocity dispersion point is observed at near the middle of the operating band. This work offers a step towards a novel hybrid transmission-line medium that can be used in a variety of functional components for broadband millimeter-wave and terahertz applications.Comment: 11 pages, 9 figures, journal articl

CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies. The rectifying device can be obtained by introducing some simple modifications of the charge-storage well in conventional CMOS integrated circuits, making the proposed solution easy to integrate with the existing imaging systems. The rectifying device is combined with the different elements of the detector, composed of a 3D high-performance antenna and a charge-storage well. In particular, its position just below the edge of the 3D antenna takes maximum advantage of the high electric field concentrated by the antenna itself. In addition, the proposed structure ensures the integrity of the charge-storage well of the detector. In the structure, it is not necessary to use very scaled and costly technological nodes, since the CMOS transistor only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed junction are reported and discussed. The overall performances of the entire detector in terms of noise equivalent power (NEP) are evaluated by combining low-frequency measurements of the rectifier with numerical simulations of the 3D antenna and the semiconductor structure at 1 THz, allowing prediction of the achievable NEP

Resonant tunneling diode oscillators for optical communications

The ability to use resonant tunneling diodes (RTDs) as both transmitters and receivers is an emerging topic, especially with regards to wireless communications. Successful data transmission has been achieved using electronic RTDs with carrier frequencies exceeding 0.3 THz. Specific optical-based RTDs, which act as photodetectors, have been developed by adjusting the device structure to include a light absorption layer and small optical windows on top of the device to allow direct optical access. This also allows the optical signal to directly modulate the RTD oscillation. Both types of RTD oscillators will allow for seamless integration of high frequency radio and optical fiber networks.European Union's Horizon research and innovation programme [645369

Review Paper on Frequency Multiplier at Terahertz Range

Frequency multiplier is an electronic circuit which generates the output frequency which is an integer multiple of the applied frequency. For this purpose, nonlinear devices such as BJT, FET, schottky diode, varactor diode, step recovery diode are used. The nonlinear region of their characteristics is utilized to design frequency multiplier. In terahertz range stability and broad bandwidth are required factors to design heterodyne receiver. For this purpose, only schottky diode is the best option because its cutoff frequency is so high and due to this reason switching frequency of this diode is high compared to its other comparable. The design of frequency multiplier consists of three parts namely the diode structure, input and output matching circuit. The detailed discussion about sources available at terahertz frequency range, different design methods of frequency multiplier with active and passive devices, comparison of available passive frequency multiplier are presented in this paper