Electrostatically driven vacuum-encapsulated polysilicon resonators part I. design and fabrication

Basic design issues and a fabrication process based on surface-micromachining techniques for electrostatically driven vacuum-encapsulated polysilicon resonators are presented. A novel freeze-drying method that does not require vacuum equipment is presented. Reactive sealing with LPCVD silicon nitride is used to create the evacuated cavity, resulting in cavity pressures close to the deposition pressure. Design issues regarding choice of materials, technology and layout are discussed. First experimental results, including an admittance plot of the one-port resonator and a plot indicating the dependence of the Q-factor on the resonator geometry and ambient pressure, are presented

Freeform terahertz structures fabricated by multi-photon lithography and metal coating

Direct-write multi-photon laser lithography (MPL) combines highest resolution on the nanoscale with essentially unlimited 3D design freedom. Over the previous years, the groundbreaking potential of this technique has been demonstrated in various application fields, including micromechanics, material sciences, microfluidics, life sciences as well as photonics, where in-situ printed optical coupling elements offer new perspectives for package-level system integration. However, millimeter-wave (mmW) and terahertz (THz) devices could not yet leverage the unique strengths of MPL, even though the underlying devices and structures could also greatly benefit from 3D freeform microfabrication. One of the key challenges in this context is the fact that functional mmW and THz structures require materials with high electrical conductivity and low dielectric losses, which are not amenable to structuring by multi-photon polymerization. In this work, we introduce and experimentally demonstrate a novel approach that allows to leverage MPL for fabricating high-performance mmW and THz structures with hitherto unachieved functionalities. Our concept exploits in-situ printed polymer templates that are selectively coated through highly directive metal deposition techniques in combination with precisely aligned 3D-printed shadowing structures. The resulting metal-coated freeform structures offer high surface quality in combination with low dielectric losses and conductivities comparable to bulk material values, while lending themselves to fabrication on planar mmW/THz circuits. We experimentally show the viability of our concept by demonstrating a series of functional THz structures such as THz interconnects, probe tips, and suspended antennas. We believe that our approach offers disruptive potential in the field of mmW and THz technology and may unlock an entirely new realm of laser-based 3D manufacturing

Microfluidics and Nanofluidics: Science, Fabrication Technology (From Cleanrooms to 3D Printing) and Their Application to Chemical Analysis by Battery-Operated Microplasmas-On-Chips

The science and phenomena that become important when fluid-flow is confined in microfluidic channels are initially discussed. Then, technologies for channel fabrication (ranging from photolithography and chemical etching, to imprinting, and to 3D-printing) are reviewed. The reference list is extensive and (within each topic) it is arranged chronologically. Examples (with emphasis on those from the authors’ laboratory) are highlighted. Among them, they involve plasma miniaturization via microplasma formation inside micro-fluidic (and in some cases millifluidic) channels fabricated on 2D and 3D-chips. Questions addressed include: How small plasmas can be made? What defines their fundamental size-limit? How small analytical plasmas should be made? And what is their ignition voltage? The discussion then continues with the science, technology and applications of nanofluidics. The conclusions include predictions on potential future development of portable instruments employing either micro or nanofluidic channels. Such portable (or mobile) instruments are expected to be controlled by a smartphone; to have (some) energy autonomy; to employ Artificial Intelligence and Deep Learning, and to have wireless connectivity for their inclusion in the Internet-of-Things (IoT). In essence, those that can be used for chemical analysis in the field for “bringing part of the lab to the sample” types of applications

Chemical Composition of Polymer Surfaces Imaged by Atomic ForceMicroscopy and Complementary Approaches

In this article we review the recent developments in the field of high resolution lateral mapping of the surface chemical composition of polymers by atomic force microscopy (AFM) and other complementary imaging techniques. The different AFM approaches toward nanometer scale mapping with chemical sensitivity based on chemical force microscopy (CFM) are discussed as a means to unravel, for instance, the lateral distribution of surface chemistry, the stability of various types of functional groups in various environments, or the interactions with controlled functional groups at the tip surface. The applicability and current limitations of CFM, which allows one to image chemical functional group distributions with a resolution in principle down to the 10–20 nm scale, are critically discussed. In addition, complementary imaging techniques are briefly reviewed and compared to the AFM-based techniques. The complementary approaches comprise various spectroscopies (infrared and Raman), secondary ion mass spectrometry (SIMS), matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS), X-ray photoelectron spectroscopy (XPS or ESCA), and near-field optical techniques used for imaging

Contributions à l’intégration des procédés de fabrication et d'encapsulation d’un commutateur MEMS RF ohmique

Abstract : This dissertation presents studies to resolve process integration problems in the fabrication of packaged radio frequency microelectromechanical system (RF MEMS) ohmic switches with a Au-Ru contact metallurgy and Al-Ge eutectic wafer bonding for wafer-level packaging (WLP). While unpackaged RF MEMS switches have shown promising attributes poor reliability has limited their development into practical products, demanding compatibility with a hermetic sealing solution. The first article, titled ‘Exploring Ru compatibility with Al-Ge eutectic wafer bonding,’ and its supplemental material examine bond impacts associated with the refractory metal ruthenium (Ru). The compatibility of Ru with a wafer bonding process has been virtually unexplored. The main text of this section outlines the results of blanket deposition annealing experiments with Ru, Al and Ge configurations to address concerns of ternary alloy poisoning, melt wettability on Ru, and Ru as a diffusing contaminant in Al and Ge. A brief exploration of the composition process window for Al-Ge alloys contaminated with Ru is made from available phase diagrams, and strong bond outcomes with real product wafers with Ru contacts are presented. The article concludes that Ru has high compatibility within an expected narrow composition process window of marginally reduced melting temperature for Al-Ge alloy. Supplemental material addresses additional process integration problems in the real bond process associated with Ru: alumina thickening, Ru contamination and Al hillock aggravation. These are challenges for the Al surface, which progressively loses bonding ability with Ge through the fabrication process, and can be obviated with unprocessed bonding Al without Ru exposure. The second article, titled ‘Mitigating re-entrant etch profile undercut in Au etch with an aqua regia variant,’ and its supplemental material examine processed Au outcomes and bond-on-contact consequences primarily inflicted on Au. Thermally-stable Au metallization to Si for microswitch contacts in packaged devices is a considerable integration challenge. The main text of this section outlines an etch profile investigation of Au metallization stack variants with adhesion layers to discriminate delamination-based undercutting from galvanic undercutting when using an aqua regia-based solution, showing which mechanism is applicable for this etchant. A brief examination of the electrochemistry of the etchant is made to explain the unusual outcome of mitigated galvanic undercut confirmed by this analysis, with delamination control eliminating or minimizing undercut for thick Au films. In the supplemental material Au surface evolution is tracked across the fabrication process, with the wafer bonding thermal cycle being deemed most significant. Au hillocking and delamination are the primary challenges, and segmentation of Au features is a leading mitigation option that increases the impact of any Au undercut. Together these chapters develop an improved understanding of contact/bond compatibility. Necessary and promising future work for RF MEMS microfabrication and packaging is outlined at the conclusion of this dissertation.Cette thèse présente des études visant à résoudre les problèmes d’intégration de procédés dans la fabrication de commutateurs radiofréquence ohmiques de systèmes microélectromécaniques de (RF MEMS) encapsulés par une métallurgie de contact Au-Ru et un collage eutectique de gaufres Al-Ge pour l'encapsulation au niveau des gaufres (Wafer-Level Packaging, WLP). Bien que les commutateurs MEMS RF non encapsules aient montré des attributs prometteurs, leur faible fiabilité a limité leur développement en produits pratiques, exigeant la compatibilité avec une solution de collage hermétique. Le premier article, intitulé ‹‹Exploring Ru compatibility with Al-Ge eutectic wafer bonding››, et son supplément examinent les effets de liaison associés au ruthénium (Ru), un métal réfractaire. La compatibilité du Ru avec un procédé de collage de gaufres a été très par inexplorée. Le texte principal de cette section présente les résultats d'expériences de recuit des dépôts pleine plaque avec des configurations de Ru, Al et Ge pour répondre aux préoccupations concernant l'empoisonnement des alliages ternaires, la mouillabilité de la masse fondue sur le Ru, et le Ru en tant que contaminant diffusant dans Al et Ge. Une brève exploration de la fenêtre de procédé de composition pour les alliages Al-Ge contaminés par Ru est faite à partir des diagrammes de phase disponibles, et des résultats de collage fort avec des gaufres de produits réels avec des contacts Ru sont présentés. L'article conclut que Ru a une compatibilité élevée dans une fenêtre de procédé de composition étroite attendue de température de fusion marginalement réduite pour l'alliage Al-Ge. Des documents complémentaires traitent de problèmes d'intégration autres dans le procédé de collage réel associés au Ru: épaississement de l'alumine, contamination par le Ru et aggravation de la topographie d'Al. Il s'agit de défis pour la surface de l'aluminium, qui perd progressivement sa capacité de collage avec le Ge au cours du procédé de fabrication, et qui peuvent être évités avec de l'aluminium de collage non traité sans exposition au Ru. Le deuxième article, intitulé ‹‹Mitigating re-entrant etch profile undercut in Au etch with an aqua regia variant››, et son matériel supplémentaire examinent les résultats de la gravure de l'Au et les conséquences de la liaison sur le contact principalement infligées à l'Au. La métallisation thermiquement stable de l'Au sur le Si pour les contacts dans les dispositifs encapsulés est un défi d'intégration considérable. Le texte principal de cette section décrit une étude sur le profil de gravure de variantes d'empilement de métallisation Au avec des couches d'adhérence pour distinguer la sous-coupe basée sur la délamination de la sous-coupe galvanique lors de l'utilisation d'une solution à base d'eau régale, montrant quel mécanisme est applicable pour ce réactif de gravure. Un bref examen de l'électrochimie de l'agent de gravure est effectué pour expliquer le résultat inhabituel de la surgravure galvanique atténuée confirmée par cette analyse, le contrôle de la délamination éliminant ou minimisant la surgravure pour les films d'Au épais. Dans les documents complémentaires, l'évolution de la surface de l'or est suivie tout au long du procédé de fabrication, le cycle thermique de collage des gaufres étant considéré comme le plus important. La formation de bosses et le délaminage de l'or sont les principaux défis à relever, et la segmentation des caractéristiques de l'or est une option d'atténuation importante qui augmente l'impact de toute contre-dépouille de l'or. Ensemble, ces chapitres permettent de mieux comprendre la compatibilité contact/liaison. Les travaux futurs nécessaires et prometteurs pour la microfabrication et le conditionnement des MEMS RF sont présentés en conclusion de cette thèse

Microelectromechanical Systems and Devices

The advances of microelectromechanical systems (MEMS) and devices have been instrumental in the demonstration of new devices and applications, and even in the creation of new fields of research and development: bioMEMS, actuators, microfluidic devices, RF and optical MEMS. Experience indicates a need for MEMS book covering these materials as well as the most important process steps in bulk micro-machining and modeling. We are very pleased to present this book that contains 18 chapters, written by the experts in the field of MEMS. These chapters are groups into four broad sections of BioMEMS Devices, MEMS characterization and micromachining, RF and Optical MEMS, and MEMS based Actuators. The book starts with the emerging field of bioMEMS, including MEMS coil for retinal prostheses, DNA extraction by micro/bio-fluidics devices and acoustic biosensors. MEMS characterization, micromachining, macromodels, RF and Optical MEMS switches are discussed in next sections. The book concludes with the emphasis on MEMS based actuators

Measurement of the Quality Factor for the Micro Electromechanical System Cantilever Devices by Using Non-Destructive Test Methodology

Development of the reliability and the performance of Micro Electro Mechanical System (MEMS) devices are the most challenging tasks of scientists and engineers. At the same time, there is a need for advance and more complex testing methods determining functional, performance of the MEMS device and to predict device performance from wafer test. Recent developments in the technologies are giving opportunities to the researchers in developing suitable non-destructive Test (NDT) methodologies for testing and evaluation of the MEMS [1]. Among several challenges regarding the commercialization of MEMS technologies, the focus of the current thesis will be to prove reliability of the MEMS devices, to determine performance criteria such as Q-factor. With regards to reliability and Q-factor; stiction, noise and squeeze film damping are the important occurrences thereby, this report provides very brief general information about these subjects that is to say detailed examination of these are not the main purpose of this thesis. MEMS technology is a promising platform for next generation sensors and actuators. Despite a substantial amount of research in the field, there are still many challenges regarding the management of energy dissipation in MEMS which limits their performance and reliability. Especially integrated MEMS devices require NDT methods to dynamically test the MEMS structures. In the current thesis, MEMS cantilever beams have been used as representative samples. Moreover, information about their performance criteria is provided, and challenges for the next generation of MEMS devices are discussed. A simple method of logarithmic decrement was applied to calculate the Q- factor of several cantilever beams. Furthermore, the project attempts to show how the contacted cantilever affects the Q-factor of the MEMS devices. Representative samples have been tested under normal air pressure and vacuum in order to eliminate the effect of squeeze film damping factor. The beam was then stuck as both line and area contact to substrate due to surface tension caused by increasing the high electrostatic forces. This way, the stuck beams were stressed because of the deformation caused by the stiction. The maximum contacted area obtained in this study was 30-40% of length. The Q-factor of the contacted and free standing MEMS cantilever switches was then experimentally evaluated. The project demonstrated an experimental set-up that utilizes a scanning laser Doppler vibrometer (LDV) with a novel calculation methodology to measure the Q-factor. Brief information was provided about the MEMS marketing and application to determine the developmental trend of the MEMS devices. Relatedly, potential future research areas related to the MEMS devices was discussed. Deeper insights on enabling technologies, materials and packaging are beyond the scope of the current thesis. The goal of this thesis is to demonstrate the measurement of Q-factor of the cantilever MEMS devices using NDT methodology and to apply calculation methods which is developed based on the best fitted envelope function methodology. The novelty of this project is to experimentally demonstrate a dramatic increase in the Q-factor quadruples as contact evolves from line to area contact.1 yea

A micromachined zipping variable capacitor

Micro-electro-mechanical systems (MEMS) have become ubiquitous in recent years and are found in a wide range of consumer products. At present, MEMS technology for radio-frequency (RF) applications is maturing steadily, and significant improvements have been demonstrated over solid-state components. A wide range of RF MEMS varactors have been fabricated in the last fifteen years. Despite demonstrating tuning ranges and quality factors that far surpass solid-state varactors, certain challenges remain. Firstly, it is difficult to scale up capacitance values while preserving a small device footprint. Secondly, many highly-tunable MEMS varactors include complex designs or process flows. In this dissertation, a new micromachined zipping variable capacitor suitable for application at 0.1 to 5 GHz is reported. The varactor features a tapered cantilever that zips incrementally onto a dielectric surface when actuated electrostatically by a pulldown electrode. Shaping the cantilever using a width function allows stable actuation and continuous capacitance tuning. Compared to existing MEMS varactors, this device has a simple design that can be implemented using a straightforward process flow. In addition, the zipping varactor is particularly suited for incorporating a highpermittivity dielectric, allowing the capacitance values and tuning range to be scaled up. This is important for portable consumer electronics where a small device footprint is attractive. Three different modelling approaches have been developed for zipping varactor design. A repeatable fabrication process has also been developed for varactors with a silicon dioxide dielectric. In proof-of-concept devices, the highest continuous tuning range is 400% (24 to 121 fF) and the measured quality factors are 123 and 69 (0.1 and 0.7 pF capacitance, respectively) at 2 GHz. The varactors have a compact design and fit within an area of 500 by 100 μm

A micromachined zipping variable capacitor

Micro-electro-mechanical systems (MEMS) have become ubiquitous in recent years and are found in a wide range of consumer products. At present, MEMS technology for radio-frequency (RF) applications is maturing steadily, and significant improvements have been demonstrated over solid-state components.A wide range of RF MEMS varactors have been fabricated in the last fifteen years. Despite demonstrating tuning ranges and quality factors that far surpass solid-state varactors, certain challenges remain. Firstly, it is difficult to scale up capacitance values while preserving a small device footprint. Secondly, many highly-tunable MEMS varactors include complex designs or process flows.In this dissertation, a new micromachined zipping variable capacitor suitable for application at 0.1 to 5 GHz is reported. The varactor features a tapered cantilever that zips incrementally onto a dielectric surface when actuated electrostatically by a pulldown electrode. Shaping the cantilever using a width function allows stable actuation and continuous capacitance tuning. Compared to existing MEMS varactors, this device has a simple design that can be implemented using a straightforward process flow. In addition, the zipping varactor is particularly suited for incorporating a highpermittivity dielectric, allowing the capacitance values and tuning range to be scaled up. This is important for portable consumer electronics where a small device footprint is attractive.Three different modelling approaches have been developed for zipping varactor design. A repeatable fabrication process has also been developed for varactors with a silicon dioxide dielectric. In proof-of-concept devices, the highest continuous tuning range is 400% (24 to 121 fF) and the measured quality factors are 123 and 69 (0.1 and 0.7 pF capacitance, respectively) at 2 GHz. The varactors have a compact design and fit within an area of 500 by 100 µm