Parametric amplification of optical phonons

Amplification of light through stimulated emission or nonlinear optical interactions has had a transformative impact on modern science and technology. The amplification of other bosonic excitations, like phonons in solids, is likely to open up new remarkable physical phenomena. Here, we report on an experimental demonstration of optical phonon amplification. A coherent mid-infrared optical field is used to drive large amplitude oscillations of the Si-C stretching mode in silicon carbide. Upon nonlinear phonon excitation, a second probe pulse experiences parametric optical gain at all wavelengths throughout the reststrahlen band, which reflects the amplification of optical-phonon fluctuations. Starting from first principle calculations, we show that the high-frequency dielectric permittivity and the phonon oscillator strength depend quadratically on the lattice coordinate. In the experimental conditions explored here, these oscillate then at twice the frequency of the optical field and provide a parametric drive for lattice fluctuations. Parametric gain in phononic four wave mixing is a generic mechanism that can be extended to all polar modes of solids, as a new means to control the kinetics of phase transitions, to amplify many body interactions or to control phonon-polariton waves

Large Electronic Anisotropy and Enhanced Chemical Activity of Highly Rippled Phosphorene

We investigate the electronic structure and chemical activity of rippled phosphorene induced by large compressive strains via first-principles calculation. It is found that phosphorene is extraordinarily bendable, enabling the accommodation of ripples with large curvatures. Such highly rippled phosphorene shows a strong anisotropy in electronic properties. For ripples along the armchair direction, the band gap changes from 0.84 to 0.51 eV for the compressive strain up to -20% and further compression shows no significant effect, for ripples along the zigzag direction, semiconductor to metal transition occurs. Within the rippled phosphorene, the local electronic properties, such as the modulated band gap and the alignments of frontier orbitals, are found to be highly spatially dependent, which may be used for modulating the injection and confinement of carriers for optical and photovoltaic applications. The examination of the interaction of a physisorbed NO molecule with the rippled phosphorene under different compressive strains shows that the chemical activities of the phosphorene are significantly enhanced at the top and bottom peaks of the ripples, indicated by the enhanced adsorption and charge transfer between them. All these features can be ascribed to the effect of curvatures, which modifies the orbital coupling between atoms at the ripple peaks