Design considerations for space flight hardware

The environmental and design constraints are reviewed along with some insight into the established design and quality assurance practices that apply to low earth orbit (LEO) space flight hardware. It is intended as an introduction for people unfamiliar with space flight considerations. Some basic data and a bibliography are included

Configurable 3D-integrated focal-plane sensor-processor array architecture

A mixed-signal Cellular Visual Microprocessor architecture with digital processors is described. An ASIC implementation is also demonstrated. The architecture is composed of a regular sensor readout circuit array, prepared for 3D face-to-face type integration, and one or several cascaded array of mainly identical (SIMD) processing elements. The individual array elements derived from the same general HDL description and could be of different in size, aspect ratio, and computing resources

Characterisation of on-chip electrostatic discharge waveforms with sub-nanosecond resolution: design of a differential high voltage probe with high bandwidth

Bliksem werd tot aan de ontdekking van de bliksemafleider (18e eeuw) gezien als een van de gevaarlijkste bedreigingen voor het stadsleven. Door het gebruik van micro-elektronica werden ingenieurs gewaar dat ditzelfde fysische verschijnsel, elektrostatische ontlading of ESD genoemd, zich ook op microscopische schaal voordoet. In de jaren zeventig was meer dan 30% van al het chipfalen te wijten aan ESD. Om dit tegen te gaan werd met het onderzoek naar ESD-protecties en -meetsystemen aangevangen. Om meer informatie over het gedrag van een ESD-protectie te verkrijgen wordt een ESD-puls op dit systeem losgelaten. Het antwoord van de protectie op deze puls wordt dan bepaald m.b.v. spannings- en stroomgolfvormmetingen. In dit werk wordt een nieuwe nauwkeurige ESD-golfvormmeettechniek voorgesteld die directe metingen op protecties kan uitvoeren. De karakterisering van ESD-golfvormen op chip wordt enorm bemoeilijkt door de grote hoeveelheid elektromagnetische interferentie die de ESD-puls veroorzaakt. Dit wordt omzeild door het gewenste signaal naar een veilige omgeving te transporteren, waar een standaard meettoestel de meting kan uitvoeren. Dit transport wordt gerealiseerd m.b.v. optische communicatie, wat immuun is voor elektromagnetische interferentie. Zo kan nauwkeurige in-situ-informatie worden verkregen waarmee de ESD-protecties in de toekomst verbeterd kunnen worden.Up to the 18th century, lightning was considered one of nature’s most dangerous threats in city life. This all ended with the lightning rod, protecting thousands of homes during lightning storms. The large-scale use of microelectronics has made engineers aware of the same physical phenomenon occuring on a microscopic scale. This phenomenon is called electrostatic discharge or ESD. In the seventies, more than 30% of all chip failure was attributed to static electricity. To counter this effect, the research for on-chip ESD protections was born. Today ESD is a buzzing line of research, as with new and faster chip technologies comes a higher ESD vulnerability. This makes ESD protection and measurement increasingly important. Although ESD is now a major subject in chip design, it copes with a lack of accurate device models. To gain more information on the exact operation of an ESD protection, an ESD pulse is unleashed upon this device. The response of the protection on this pulse is then assessed by performing voltage or current waveform measurements. This work presents a waveform measurement technique able to accurately perform direct measurements on the ESD protection. Due to the high amount of electromagnetic interference caused by the ESD pulse, direct waveform characterisation near the protection is hard. This is solved by transporting the target signal into a clean area, where the measurement is performed by standard lab equipment. The key is that this transportation is realized by means of optical communication, which is immune to electromagnetic interference. This way, accurate in situ information can be used to protect tomorrow’s chips

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

ELECTRICAL AND MECHANICAL CHARACTERIZATION OF MWNT FILLED CONDUCTIVE ADHESIVE FOR ELECTRONICS PACKAGING

Lead-tin solder has been widely used as interconnection material in electronics packaging for a long time. In response to environmental legislation, the lead-tin alloys are being replaced with lead-free alloys and electrically conductive adhesives in consumer electronics. Lead-free solder usually require higher reflow temperatures than the traditional lead-tin alloys, which can cause die crack and board warpage in assembly process, thereby impacting the assembly yields. The high tin content in lead-free solder forms tin whiskers, which has the potential to cause short circuits failure. Conductive adhesives are an alternative to solder reflow processing, however, conductive adhesives require up to 80 wt% metal filler to ensure electrical and thermal conductivity. The high loading content degrades the mechanical properties of the polymer matrix and reduces the reliability and assembly yields when compared to soldered assemblies. Carbon nanotubes (CNTs) have ultra high aspect ratio as well as many novel properties. The high aspect ratio of CNTs makes them easy to form percolation at low loading and together with other novel properties make it possible to provide electrical and thermal conductivity for the polymer matrix while maintaining or even reinforcing the mechanical properties. Replacing the metal particles with CNTs in conductive adhesive compositions has the potential benefits of being lead free, low process temperature, corrosion resistant, electrically/thermally conductive, high mechanical strength and lightweight. In this paper, multiwall nanotubes (MWNTs) with different dimensions are mixed with epoxy. The relationships among MWNTs dimension, volume resistivity and thermal conductivity of the composite are characterized. Different loadings of CNTs, additives and mixing methods were used to achieve satisfying electrical and mechanical properties and pot life. Different assembly technologies such as pressure dispensing, screen and stencil printing are used to simplify the processing method and raise the assembly yields. Contact resistance, volume resistivity, high frequency performance, thermal conductivity and mechanical properties were measured and compared with metal filled conductive adhesive and traditional solder paste

Facility Systems, Ground Support Systems, and Ground Support Equipment General Design Requirements

This standard establishes requirements and guidance for design and fabrication of ground systems (GS) that includes: ground support equipment (GSE), ground support systems (GSS), and facility ground support systems (F GSS) to provide uniform methods and processes for design and development of robust, safe, reliable, maintainable, supportable, and cost-effective GS in support of space flight and institutional programs and projects

Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits. The primary requirement to ensure rapid switching of power MOSFETs was a gate drive buffer capable of taking a control signal and driving the MOSFET gate with high current required. In this work, the first integrated SiC CMOS gate driver was developed in a 1.2 μm SiC CMOS process to drive a SiC power MOSFET. The driver was designed for close integration inside a power module and exposure to high temperatures. The drive strength of the gate driver was controllable to allow for managing power MOSFET switching speed and potential drain voltage overshoot. Output transistor layouts were optimized using custom Python software in conjunction with existing design tool resources. A wafer-level test system was developed to identify yield issues in the gate driver output transistors. This method allowed for qualitative and quantitative evaluation of transistor leakage while the system was under probe. Wafer-level testing and results are presented. The gate driver was tested under high temperature operation up to 530 degrees celsius. An integrated module was built and tested to illustrate the capability of the gate driver to control a power MOSFET under load. The adjustable drive strength feature was successfully demonstrated