BiCMOS Millimetre-wave low-noise amplifier

Abstract: Please refer to full text to view abstract.D.Phil. (Electrical and Electronic Engineering

RF and Microwave Band-Pass Passive Filters for Mobile Transceivers with a Focus on BAW Technology

International audienc

Digitally-Assisted RF IC Design Techniques for Reliable Performance

Semiconductor industries have competitively scaled down CMOS devices to attain benefits of low cost, high performance, and high integration density in digital integrated circuits. On the other hand, deep scaled technologies inextricably accompany a large process variation, supply voltage scaling, and reduction in breakdown voltages of transistors. When it comes to RF/analog IC design, CMOS scaling adversely affects its reliability due to large performance variation and limited linearity. For addressing the issues related to variations and linearity, this research proposes the following digitally-assisted RF circuit design techniques: self-calibration system for RF phase shifters and wide dynamic range LNAs. Due to PVT variations in scaled technologies, RF phase shifter design becomes more challenging with device scaling. In the proposed self-calibration topology, we devised a novel phase sensing method and a pulsewidth-to-digital converter. The feedback controller is also designed in digital domain, which is robust to PVT variations. These unique techniques enable a sensing/control loop tolerant to PVT variations. The self-calibration loop was applied to a 7 to 13GHz phase shifter. With the calibration, the estimated phase error is less than 2 degrees. To overcome the linearity issue in scaled technologies, a digitally-controlled dual-mode LNA design is presented. A narrowband (5.1GHz) and a wideband (0.8 to 6GHz) LNA can be toggled between high-gain and high-linearity modes by digital control bits according to the input signal power. A compact design, which provides negligible performance degradation by additional circuitry, is achieved by sharing most of the components between the two operation modes. The narrowband and the wideband LNA achieves an input-referred P1dB of -1.8dBm and +4.2dBm, respectively

Direct Conversion RF Front-End Implementation for Ultra-Wideband (UWB) and GSM/WCDMA Dual-Band Applications in Silicon-Based Technologies

This dissertation focuses on wideband circuit design and implementation issues up to 10GHz based on the direct conversion architecture in the CMOS and SiGe BiCMOS technologies. The dissertation consists of two parts: One, implementation of a RF front-end receiver for an ultra-wideband system and, two, implementation of a local oscillation (LO) signal for a GSM/WCDMA multiband application. For emerging ultra-wideband (UWB) applications, the key active components in the RF front-end receiver were designed and implemented in 0.18um SiGe BiCMOS process. The design of LNA, which is the critical circuit block for both systems, was analyzed in terms of noise, linearity and group delay variation over an extemely wide bandwidth. Measurements are demonstrated for an energy-thrifty UWB receiver based on an MB-OFDM system covering the full FCC-allowed UWB frequency range. For multiband applications such as a GSM/WCDMA dual-band application, the design of wideband VCO and various frequency generation blocks are investigated as alternatives for implementation of direct conversion architecture. In order to reduce DC-offset and LO pulling phenomena that degrade performance in a typical direct conversion scheme, an innovative fractional LO signal generator was implemented in a standard CMOS process. A simple analysis is provided for the loop dynamics and operating range of the design as well as for the measured results of the factional LO signal generator.Ph.D.Committee Chair: Dr. Laskar, Joy; Committee Member: Dr. Cressler, John; Committee Member: Dr. Kohl, Paul; Committee Member: Dr. Papapolymerou, John; Committee Member: Dr. Scott, Waymon