Evaluating Interaction Techniques in an Interactive Workspace: Comparing the Effectiveness of a Textual Interface, Virtual Paths Interface, and ARIS

ARIS is an interface that enables users to visually relocate applications and redirect input among myriad devices in an interactive workspace. While we previously claimed that ARIS is more effective than other interfaces for performing these tasks, this work seeks to empirically validate our claim. We compared the use of ARIS to an interaction design of a text-based and virtual paths interface for relocating applications and redirecting input in an interactive workspace. Results show that (i) users can relocate applications and redirect input faster with ARIS than a text-based interface, (ii) users commit fewer errors with ARIS than a text-based interface, (iii) users experience less workload and are more satisfied with ARIS than a text-based interface, and (iv) ARIS was comparable to the use of a virtual paths interface. ARIS is more effective than an interaction design that requires a user to mentally map and select textual identifiers, while supporting functionality beyond that of a virtual paths interface

Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO3_3/SrTiO3_3 interfaces

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.Comment: 4 figures in main text; 4 figures in the supplemen

Influence of thickness and interface on the low-temperature enhancement of the spin Seebeck effect in YIG films

The temperature dependent longitudinal spin Seebeck effect (LSSE) in heavy metal (HM)/Y3Fe5O12 (YIG) hybrid structures is investigated as a function of YIG film thickness, magnetic field strength, and different HM detection material. The LSSE signal shows a large enhancement with reducing the temperature, leading to a pronounced peak at low temperatures. We find the LSSE peak temperature strongly depends on the film thickness as well as on the magnetic field. Our result can be well explained in the framework of magnon-driven LSSE by taking into account the temperature dependent effective propagation length of thermally excited magnons in bulk. We further demonstrate that the LSSE peak is significantly shifted by changing the interface coupling to an adjacent detection layer, revealing a more complex behavior beyond the currently discussed bulk effect. By direct microscopic imaging of the interface, we correlate the observed temperature dependence with the interface structure between the YIG and the adjacent metal layer. Our results highlight the role of interface effects on the temperature dependent LSSE in HM/YIG system, suggesting that the temperature dependent spin current transparency strikingly relies on the interface conditions