A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-Ω input and output matching and fabricated in a 0.12-µm SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5 dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6 mm^2. By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband

Monolithic integration of broadband optical isolators for polarization-diverse silicon photonics

Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PIC). An ideal integrated optical isolator for PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-diverse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet all these requirements. In this article we present monolithically integrated broadband magneto-optical isolators on silicon and silicon nitride (SiN) platforms operating for both TE and TM modes with record high performances, fulfilling all the essential characteristics for PIC applications. In particular, we demonstrate fully-TE broadband isolators by depositing high quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. This work demonstrates monolithic integration of high performance optical isolators on chip for polarization-diverse silicon photonic systems, enabling new pathways to impart nonreciprocal photonic functionality to a variety of integrated photonic devices

Millimetre Wave Power Measurement

There is currently no traceable power sensor for millimetre wave frequencies above 110 GHz. This thesis investigates a novel approach to remove this limitation by combining the placement of a uniquely designed microchip directly in waveguide. The design of the chip is novel in that it does not rely on a supporting structure or an external antenna when placed in the waveguide. The performance of the design was primarily analysed by computer simulation and verified with the measurement of a scale model. The results show that it is feasible to measure high frequency power by placing a chip directly in waveguide. It is predicted that the chip is able to absorb approximately 60% of incident power. Any further efficiency would require modification of the chip substrate. However, this proposed design should allow the standards institutes a reference that will enable the calibration of equipment to beyond 110 GHz

The ALICE TPC, a large 3-dimensional tracking device with fast readout for ultra-high multiplicity events

The design, construction, and commissioning of the ALICE Time-Projection Chamber (TPC) is described. It is the main device for pattern recognition, tracking, and identification of charged particles in the ALICE experiment at the CERN LHC. The TPC is cylindrical in shape with a volume close to 90 m^3 and is operated in a 0.5 T solenoidal magnetic field parallel to its axis. In this paper we describe in detail the design considerations for this detector for operation in the extreme multiplicity environment of central Pb--Pb collisions at LHC energy. The implementation of the resulting requirements into hardware (field cage, read-out chambers, electronics), infrastructure (gas and cooling system, laser-calibration system), and software led to many technical innovations which are described along with a presentation of all the major components of the detector, as currently realized. We also report on the performance achieved after completion of the first round of stand-alone calibration runs and demonstrate results close to those specified in the TPC Technical Design Report.Comment: 55 pages, 82 figure

Improved charge injection device and a focal plane interface electronics board for stellar tracking

An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered

Silicon-based distributed voltage-controlled oscillators

Distributed voltage-controlled oscillators (DVCOs) are presented as a new approach to the design of silicon VCOs at microwave frequencies. In this paper, the operation of distributed oscillators is analyzed and the general oscillation condition is derived, resulting in analytical expressions for the frequency and amplitude. Two tuning techniques for DVCOs are demonstrated, namely, the inherent-varactor tuning and delay-balanced current-steering tuning. A complete analysis of the tuning techniques is presented. CMOS and bipolar DVCOs have been designed and fabricated in a 0.35-μm BiCMOS process. A 10-GHz CMOS DVCO achieves a tuning range of 12% (9.3-10.5 GHz) and a phase noise of -103 dBc/Hz at 600 kHz offset from the carrier. The oscillator provides an output power of -4.5 dBm without any buffering, drawing 14 mA of dc current from a 2.5-V power supply. A 12-GHz bipolar DVCO consuming 6 mA from a 2.5-V power supply is also demonstrated. It has a tuning range of 26% with a phase noise of -99 dBc/Hz at 600 kHz offset from the carrier

A 24-GHz CMOS Front-End

This paper reports the first 24-GHz CMOS front-end in a 0.18-µm process. It consists of a low-noise amplifier (LNA) and a mixer and downconverts an RF input at 24GHz to an IF of 5 GHz. It has a power gain of 27.5 dB and an overall noise figure of 7.7 dB with an input return loss, S[sub]11 of 21 dB consuming 20 mA from a 1.5-V supply. The LNA achieves a power gain of 15 dB and a noise figure of 6 dB on 16 mA of dc current. The LNA’s input stage utilizes a common-gate with resistive feedthrough topology. The performance analysis of this topology predicts the experimental results with good accuracy

Technical Design Report for the PANDA Micro Vertex Detector

This document illustrates the technical layout and the expected performance of the Micro Vertex Detector (MVD) of the PANDA experiment. The MVD will detect charged particles as close as possible to the interaction zone. Design criteria and the optimisation process as well as the technical solutions chosen are discussed and the results of this process are subjected to extensive Monte Carlo physics studies. The route towards realisation of the detector is outlined