Design of Variation-Tolerant Circuits for Nanometer CMOS Technology: Circuits and Architecture Co-Design

Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing significantly with technology scaling. In addition, manufacturing tolerances in process technology are not scaling at the same pace as transistor's channel length due to process control limitations (e.g., sub-wavelength lithography). Therefore, within-die process variations worsen with successive technology generations. These variations have a strong impact on the maximum clock frequency and leakage power for any digital circuit, and can also result in functional yield losses in variation-sensitive digital circuits (such as SRAM). Moreover, in nanometer technologies, digital circuits show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost while achieving higher performance and density. It is therefore not surprising that the International Technology Roadmap for Semiconductors (ITRS) lists variability as one of the most challenging obstacles for IC design in nanometer regime. To facilitate variation-tolerant design, we study the impact of random variations on the delay variability of a logic gate and derive simple and scalable statistical models to evaluate delay variations in the presence of within-die variations. This work provides new design insight and highlights the importance of accounting for the effect of input slew on delay variations, especially at lower supply voltages. The derived models are simple, scalable, bias dependent and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit/architecture optimization as well as technology prediction (especially in low-power and low-voltage operation). The derived models are verified using Monte Carlo SPICE simulations using industrial 90nm technology. Random variations in nanometer technologies are considered one of the largest design considerations. This is especially true for SRAM, due to the large variations in bitcell characteristics. Typically, SRAM bitcells have the smallest device sizes on a chip. Therefore, they show the largest sensitivity to different sources of variations. With the drastic increase in memory densities, lower supply voltages and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. In this research, we present a methodology for statistical simulation of SRAM read access yield, which is tightly related to SRAM performance and power consumption. The proposed flow accounts for the impact of bitcell read current variation, sense amplifier offset distribution, timing window variation and leakage variation on functional yield. The methodology overcomes the pessimism existing in conventional worst-case design techniques that are used in SRAM design. The proposed statistical yield estimation methodology allows early yield prediction in the design cycle, which can be used to trade off performance and power requirements for SRAM. The methodology is verified using measured silicon yield data from a 1Mb memory fabricated in an industrial 45nm technology. Embedded SRAM dominates modern SoCs and there is a strong demand for SRAM with lower power consumption while achieving high performance and high density. However, in the presence of large process variations, SRAMs are expected to consume larger power to ensure correct read operation and meet yield targets. We propose a new architecture that significantly reduces array switching power for SRAM. The proposed architecture combines built-in self-test (BIST) and digitally controlled delay elements to reduce the wordline pulse width for memories while ensuring correct read operation; hence, reducing switching power. A new statistical simulation flow was developed to evaluate the power savings for the proposed architecture. Monte Carlo simulations using a 1Mb SRAM macro from an industrial 45nm technology was used to examine the power reduction achieved by the system. The proposed architecture can reduce the array switching power significantly and shows large power saving - especially as the chip level memory density increases. For a 48Mb memory density, a 27% reduction in array switching power can be achieved for a read access yield target of 95%. In addition, the proposed system can provide larger power saving as process variations increase, which makes it a very attractive solution for 45nm and below technologies. In addition to its impact on bitcell read current, the increase of local variations in nanometer technologies strongly affect SRAM cell stability. In this research, we propose a novel single supply voltage read assist technique to improve SRAM static noise margin (SNM). The proposed technique allows precharging different parts of the bitlines to VDD and GND and uses charge sharing to precisely control the bitline voltage, which improves the bitcell stability. In addition to improving SNM, the proposed technique also reduces memory access time. Moreover, it only requires one supply voltage, hence, eliminates the need of large area voltage shifters. The proposed technique has been implemented in the design of a 512kb memory fabricated in 45nm technology. Results show improvements in SNM and read operation window which confirms the effectiveness and robustness of this technique

Design of Digital SoC for Operation at High Temperatures

There is a growing demand for Systems-on-Chip, integrating microprocessors, on-chip memories, data converters and a variety of sensors, which are capable of reliable operation at high temperatures. For instance, modern aircraft industry demands microcontrollers and electric motors to operate at high temperatures, in order to replace present hydraulic structures. This thesis explains how to design digital SoC which are capable of reliable operation at high temperatures. The essential part of this thesis focuses on the design, implementation, fabrication and high-temperature measurements of on-chip Latch based SRAM, PowerPC e200 based microcontroller, digital temperature sensor and Flash A/D converter. Embedded on-chip SRAM modules are one of the most important components in the modern SoC. We analyze thermally-caused failures in the 6T SRAM cell and elaborate on its reliability. Further, we show that Latch based SRAM modules are preferable to 6T SRAM for reliable operation beyond 150C, by comparing two 1kB SRAM modules implemented in standard 0.18um SOI CMOS process. We demonstrate reliable SRAM operation at 275C (fmax = 10MHz, Ptot = 400mW), that is by far the highest reported operating temperature for digital on-chip SRAM module. Designing SoCs for reliable operation at elevated temperatures is a significant challenge, due to increased static leakage current, reduced carrier mobility, and increased electromigration. We propose to customize a PowerPC e200 based SoC by using a dynamically reconfigurable clock frequency, exhaustive clock gating, and electromigration-resistant power distribution network. We fabricated a 20x9mm2 chip implementing this design in 0.35um Bulk CMOS process. We present worldâs first PowerPC based SoC for reliable operation at 225C (fmax = 30MHz, Ptot = 1.2W). This design outperforms previously reported PowerPC based SoCs, which are not operational at temperatures beyond 125C. The on-chip measurements of the p-n junction temperature allow reliability improvements for the SoC that operates at high temperatures. Low-resolution temperature measurements are efficiently used for adjusting the optimal operation frequency and supply voltage. We used the Time-to-Digital conversion technique to design a fully-digital temperature sensor. We designed and simulated a fully-digital 5bit temperature sensor for 10C resolution temperature measurements in between Tj,min = -45C and Tj,max = 125C. Further, using a single clock cycle Time-to-Digital conversion technique, we present a fully-digital 5bit Pulse based Flash ADC implemented in 0.18um Bulk CMOS process. Measurement results demonstrate the state-of-the-art power efficiency result of 450 fJ/conv (fmax = 83MHz, Ptot = 900uW)

Resilience of an embedded architecture using hardware redundancy

In the last decade the dominance of the general computing systems market has being replaced by embedded systems with billions of units manufactured every year. Embedded systems appear in contexts where continuous operation is of utmost importance and failure can be profound. Nowadays, radiation poses a serious threat to the reliable operation of safety-critical systems. Fault avoidance techniques, such as radiation hardening, have been commonly used in space applications. However, these components are expensive, lag behind commercial components with regards to performance and do not provide 100% fault elimination. Without fault tolerant mechanisms, many of these faults can become errors at the application or system level, which in turn, can result in catastrophic failures. In this work we study the concepts of fault tolerance and dependability and extend these concepts providing our own definition of resilience. We analyse the physics of radiation-induced faults, the damage mechanisms of particles and the process that leads to computing failures. We provide extensive taxonomies of 1) existing fault tolerant techniques and of 2) the effects of radiation in state-of-the-art electronics, analysing and comparing their characteristics. We propose a detailed model of faults and provide a classification of the different types of faults at various levels. We introduce an algorithm of fault tolerance and define the system states and actions necessary to implement it. We introduce novel hardware and system software techniques that provide a more efficient combination of reliability, performance and power consumption than existing techniques. We propose a new element of the system called syndrome that is the core of a resilient architecture whose software and hardware can adapt to reliable and unreliable environments. We implement a software simulator and disassembler and introduce a testing framework in combination with ERA’s assembler and commercial hardware simulators

Reliability in the face of variability in nanometer embedded memories

In this thesis, we have investigated the impact of parametric variations on the behaviour of one performance-critical processor structure - embedded memories. As variations manifest as a spread in power and performance, as a first step, we propose a novel modeling methodology that helps evaluate the impact of circuit-level optimizations on architecture-level design choices. Choices made at the design-stage ensure conflicting requirements from higher-levels are decoupled. We then complement such design-time optimizations with a runtime mechanism that takes advantage of adaptive body-biasing to lower power whilst improving performance in the presence of variability. Our proposal uses a novel fully-digital variation tracking hardware using embedded DRAM (eDRAM) cells to monitor run-time changes in cache latency and leakage. A special fine-grain body-bias generator uses the measurements to generate an optimal body-bias that is needed to meet the required yield targets. A novel variation-tolerant and soft-error hardened eDRAM cell is also proposed as an alternate candidate for replacing existing SRAM-based designs in latency critical memory structures. In the ultra low-power domain where reliable operation is limited by the minimum voltage of operation (Vddmin), we analyse the impact of failures on cache functional margin and functional yield. Towards this end, we have developed a fully automated tool (INFORMER) capable of estimating memory-wide metrics such as power, performance and yield accurately and rapidly. Using the developed tool, we then evaluate the #effectiveness of a new class of hybrid techniques in improving cache yield through failure prevention and correction. Having a holistic perspective of memory-wide metrics helps us arrive at design-choices optimized simultaneously for multiple metrics needed for maintaining lifetime requirements

先端プロセス技術における混載SRAMの高信頼・低電力化に関する研究

13301甲第4843号博士（工学）金沢大学博士論文本文Ful

A Sustainable Autonomic Architecture for Organically Reconfigurable Computing Systems

A Sustainable Autonomic Architecture for Organically Reconfigurable Computing System based on SRAM Field Programmable Gate Arrays (FPGAs) is proposed, modeled analytically, simulated, prototyped, and measured. Low-level organic elements are analyzed and designed to achieve novel self-monitoring, self-diagnosis, and self-repair organic properties. The prototype of a 2-D spatial gradient Sobel video edge-detection organic system use-case developed on a XC4VSX35 Xilinx Virtex-4 Video Starter Kit is presented. Experimental results demonstrate the applicability of the proposed architecture and provide the infrastructure to quantify the performance and overcome fault-handling limitations. Dynamic online autonomous functionality restoration after a malfunction or functionality shift due to changing requirements is achieved at a fine granularity by exploiting dynamic Partial Reconfiguration (PR) techniques. A Genetic Algorithm (GA)-based hardware/software platform for intrinsic evolvable hardware is designed and evaluated for digital circuit repair using a variety of well-accepted benchmarks. Dynamic bitstream compilation for enhanced mutation and crossover operators is achieved by directly manipulating the bitstream using a layered toolset. Experimental results on the edge-detector organic system prototype have shown complete organic online refurbishment after a hard fault. In contrast to previous toolsets requiring many milliseconds or seconds, an average of 0.47 microseconds is required to perform the genetic mutation, 4.2 microseconds to perform the single point conventional crossover, 3.1 microseconds to perform Partial Match Crossover (PMX) as well as Order Crossover (OX), 2.8 microseconds to perform Cycle Crossover (CX), and 1.1 milliseconds for one input pattern intrinsic evaluation. These represent a performance advantage of three orders of magnitude over the JBITS software framework and more than seven orders of magnitude over the Xilinx design flow. Combinatorial Group Testing (CGT) technique was combined with the conventional GA in what is called CGT-pruned GA to reduce repair time and increase system availability. Results have shown up to 37.6% convergence advantage using the pruned technique. Lastly, a quantitative stochastic sustainability model for reparable systems is formulated to evaluate the Sustainability of FPGA-based reparable systems. This model computes at design-time the resources required for refurbishment to meet mission availability and lifetime requirements in a given fault-susceptible missions. By applying this model to MCNC benchmark circuits and the Sobel Edge-Detector in a realistic space mission use-case on Xilinx Virtex-4 FPGA, we demonstrate a comprehensive model encompassing the inter-relationships between system sustainability and fault rates, utilized, and redundant hardware resources, repair policy parameters and decaying reparability

TIME-DIFFERENCE CIRCUITS: METHODOLOGY, DESIGN, AND DIGITAL REALIZATION

This thesis presents innovations for a special class of circuits called Time Difference (TD) circuits. We introduce a signal processing methodology with TD signals that alters the target signal from a magnitude perspective to time interval between two time events and systematically organizes the primary TD functions abstracted from existing TD circuits and systems. The TD circuits draw attention from a broad range of application fields. In addition, highly evolved complementary metal-oxide-semiconductor (CMOS) technology suffers from various problems related to voltage and current amplitude signal processing methods. Compared to traditional analog and digital circuits, TD circuits bring several compelling features: high-resolution, high-throughput, and low-design complexity with digital integration capability. Further, the fabrication technology is advancing into the nanometer regime; the reduction in voltage headroom limits the performance of traditional analog/mixed-signal designs. All-digital design of time-difference circuit needs to be stressed to adapt to the low-cost, low-power, and high-portability applications. We focus on Time-to-Digital Converters (TDC), one of the crucial building blocks in TD circuits. A novel algorithmic architecture is proposed based on a binary search algorithm and validated with both simulation and fabricated silicon. An all-digital structure Time-difference Amplifier (TDA) is designed and implemented to make FPGA and other all-digital implementations for TDC and related TD circuits feasible. Besides, we propose an all-digital timing measurement circuit based on the process variation from CMOS fabrication: PVTMC, which achieves a high measurement resolution:

Yield-Aware Leakage Power Reduction of On-Chip SRAMs

Leakage power dissipation of on-chip static random access memories (SRAMs) constitutes a significant fraction of the total chip power consumption in state-of-the-art microprocessors and system-on-chips (SoCs). Scaling the supply voltage of SRAMs during idle periods is a simple yet effective technique to reduce their leakage power consumption. However, supply voltage scaling also results in the degradation of the cells’ robustness, and thus reduces their capability to retain data reliably. This is particularly resulting in the failure of an increasing number of cells that are already weakened by excessive process parameters variations and/or manufacturing imperfections in nano-meter technologies. Thus, with technology scaling, it is becoming increasingly challenging to maintain the yield while attempting to reduce the leakage power of SRAMs. This research focuses on characterizing the yield-leakage tradeoffs and developing novel techniques for a yield-aware leakage power reduction of SRAMs. We first demonstrate that new fault behaviors emerge with the introduction of a low-leakage standby mode to SRAMs. In particular, it is shown that there are some types of defects in SRAM cells that start to cause failures only when the drowsy mode is activated. These defects are not sensitized in the active operating mode, and thus escape the traditional March tests. Fault models for these newly observed fault behaviors are developed and described in this thesis. Then, a new low-complexity test algorithm, called March RAD, is proposed that is capable of detecting all the drowsy faults as well as the simple traditional faults. Extreme process parameters variations can also result in SRAM cells with very weak data-retention capability. The probability of such cells may be very rare in small memory arrays, however, in large arrays, their probability is magnified by the huge number of bit-cells integrated on a single chip. Hence, it is critical also to account for such extremal events while attempting to scale the supply voltage of SRAMs. To estimate the statistics of such rare events within a reasonable computational time, we have employed concepts from extreme value theory (EVT). This has enabled us to accurately model the tail of the cell failure probability distribution versus the supply voltage. Analytical models are then developed to characterize the yield-leakage tradeoffs in large modern SRAMs. It is shown that even a moderate scaling of the supply voltage of large SRAMs can potentially result in significant yield losses, especially in processes with highly fluctuating parameters. Thus, we have investigated the application of fault-tolerance techniques for a more efficient leakage reduction of SRAMs. These techniques allow for a more aggressive voltage scaling by providing tolerance to the failures that might occur during the sleep mode. The results show that in a 45-nm technology, assuming 10% variation in transistors threshold voltage, repairing a 64KB memory using only 8 redundant rows or incorporating single error correcting codes (ECCs) allows for ~90% leakage reduction while incurring only ~1% yield loss. The combination of redundancy and ECC, however, allows to reach the practical limits of leakage reduction in the analyzed benchmark, i.e., ~95%. Applying an identical standby voltage to all dies, regardless of their specific process parameters variations, can result in too many cell failures in some dies with heavily skewed process parameters, so that they may no longer be salvageable by the employed fault-tolerance techniques. To compensate for the inter-die variations, we have proposed to tune the standby voltage of each individual die to its corresponding minimum level, after manufacturing. A test algorithm is presented that can be used to identify the minimum applicable standby voltage to each individual memory die. A possible implementation of the proposed tuning technique is also demonstrated. Simulation results in a 45-nm predictive technology show that tuning standby voltage of SRAMs can enhance data-retention yield by an additional 10%−50%, depending on the severity of the variations

Energy-efficient analog-to-digital conversion for ultra-wideband radio

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.Includes bibliographical references (p. 207-222).In energy constrained signal processing and communication systems, a focus on the analog or digital circuits in isolation cannot achieve the minimum power consumption. Furthermore, in advanced technologies with significant variation, yield is traditionally achieved only through conservative design and a sacrifice of energy efficiency. In this thesis, these limitations are addressed with both a comprehensive mixed-signal design methodology and new circuits and architectures, as presented in the context of an analog-to-digital converter (ADC) for ultra-wideband (UWB) radio. UWB is an emerging technology capable of high-data-rate wireless communication and precise locationing, and it requires high-speed (>500MS/s), low-resolution ADCs. The successive approximation register (SAR) topology exhibits significantly reduced complexity compared to the traditional flash architecture. Three time-interleaved SAR ADCs have been implemented. At the mixed-signal optimum energy point, parallelism and reduced voltage supplies provide more than 3x energy savings. Custom control logic, a new capacitive DAC, and a hierarchical sampling network enable the high-speed operation. Finally, only a small amount of redundancy, with negligible power penalty, dramatically improves the yield of the highly parallel ADC in deep sub-micron CMOS.by Brian P. Ginsburg.Ph.D

Predicting power scalability in a reconfigurable platform

This thesis focuses on the evolution of digital hardware systems. A reconfigurable platform is proposed and analysed based on thin-body, fully-depleted silicon-on-insulator Schottky-barrier transistors with metal gates and silicide source/drain (TBFDSBSOI). These offer the potential for simplified processing that will allow them to reach ultimate nanoscale gate dimensions. Technology CAD was used to show that the threshold voltage in TBFDSBSOI devices will be controllable by gate potentials that scale down with the channel dimensions while remaining within appropriate gate reliability limits. SPICE simulations determined that the magnitude of the threshold shift predicted by TCAD software would be sufficient to control the logic configuration of a simple, regular array of these TBFDSBSOI transistors as well as to constrain its overall subthreshold power growth. Using these devices, a reconfigurable platform is proposed based on a regular 6-input, 6-output NOR LUT block in which the logic and configuration functions of the array are mapped onto separate gates of the double-gate device. A new analytic model of the relationship between power (P), area (A) and performance (T) has been developed based on a simple VLSI complexity metric of the form ATσ = constant. As σ defines the performance “return” gained as a result of an increase in area, it also represents a bound on the architectural options available in power-scalable digital systems. This analytic model was used to determine that simple computing functions mapped to the reconfigurable platform will exhibit continuous power-area-performance scaling behavior. A number of simple arithmetic circuits were mapped to the array and their delay and subthreshold leakage analysed over a representative range of supply and threshold voltages, thus determining a worse-case range for the device/circuit-level parameters of the model. Finally, an architectural simulation was built in VHDL-AMS. The frequency scaling described by σ, combined with the device/circuit-level parameters predicts the overall power and performance scaling of parallel architectures mapped to the array