Nonlinear mechanisms in passive microwave devices

Premi extraordinari doctorat curs 2010-2011, àmbit d’Enginyeria de les TICThe telecommunications industry follows a tendency towards smaller devices, higher power and higher frequency, which imply an increase on the complexity of the electronics involved. Moreover, there is a need for extended capabilities like frequency tunable devices, ultra-low losses or high power handling, which make use of advanced materials for these purposes. In addition, increasingly demanding communication standards and regulations push the limits of the acceptable performance degrading indicators. This is the case of nonlinearities, whose effects, like increased Adjacent Channel Power Ratio (ACPR), harmonics, or intermodulation distortion among others, are being included in the performance requirements, as maximum tolerable levels. In this context, proper modeling of the devices at the design stage is of crucial importance in predicting not only the device performance but also the global system indicators and to make sure that the requirements are fulfilled. In accordance with that, this work proposes the necessary steps for circuit models implementation of different passive microwave devices, from the linear and nonlinear measurements to the simulations to validate them. Bulk acoustic wave resonators and transmission lines made of high temperature superconductors, ferroelectrics or regular metals and dielectrics are the subject of this work. Both phenomenological and physical approaches are considered and circuit models are proposed and compared with measurements. The nonlinear observables, being harmonics, intermodulation distortion, and saturation or detuning, are properly related to the material properties that originate them. The obtained models can be used in circuit simulators to predict the performance of these microwave devices under complex modulated signals, or even be used to predict their performance when integrated into more complex systems. A key step to achieve this goal is an accurate characterization of materials and devices, which is faced by making use of advanced measurement techniques. Therefore, considerations on special measurement setups are being made along this thesis.Award-winningPostprint (published version

A Comparative Study Between a Micromechanical Cantilever Resonator and MEMS-based Passives for Band-pass Filtering Application

Over the past few years, significant growth has been observed in using MEMS based passive components in the RF microelectronics domain, especially in transceiver components. This is due to some excellent properties of the MEMS devices like low loss, excellent isolation etc. in the microwave frequency domain where the on-chip passives normally tend to become leakier and degrades the transceiver performance. This paper presents a comparative analysis between MEMS-resonator based and MEMS-passives based band-pass filter configurations for RF applications, along with their design, simulation, fabrication and characterization. The filters were designed to have a center frequency of 455 kHz, meant for use as the intermediate frequency (IF) filter in superheterodyne receivers. The filter structures have been fabricated in PolyMUMPs process, a three-polysilicon layer surface micromachining process.Comment: 6 pages, 15 figure

Silicon on Nothing Mems Electromechanical Resonator

The very significant growth of the wireless communication industry has spawned tremendous interest in the development of high performances radio frequencies (RF) components. Micro Electro Mechanical Systems (MEMS) are good candidates to allow reconfigurable RF functions such as filters, oscillators or antennas. This paper will focus on the MEMS electromechanical resonators which show interesting performances to replace SAW filters or quartz reference oscillators, allowing smaller integrated functions with lower power consumption. The resonant frequency depends on the material properties, such as Young's modulus and density, and on the movable mechanical structure dimensions (beam length defined by photolithography). Thus, it is possible to obtain multi frequencies resonators on a wafer. The resonator performance (frequency, quality factor) strongly depends on the environment, like moisture or pressure, which imply the need for a vacuum package. This paper will present first resonator mechanisms and mechanical behaviors followed by state of the art descriptions with applications and specifications overview. Then MEMS resonator developments at STMicroelectronics including FEM analysis, technological developments and characterization are detailed.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing

Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators

We investigate the sputter growth of very thin aluminum nitride (AlN) films on iridium electrodes for electroacoustic devices operating in the super high frequency range. Superior crystal quality and low stress films with thicknesses as low as 160 nm are achieved after a radio frequency plasma treatment of the iridium electrode followed by a two-step alternating current reactive magnetron sputtering of an aluminum target, which promotes better conditions for the nucleation of well textured AlN films in the very first stages of growth. Solidly mounted resonators tuned around 8 GHz with effective electromechanical coupling factors of 5.8% and quality factors Q up to 900 are achieved

The 2019 surface acoustic waves roadmap

Today, surface acoustic waves (SAWs) and bulk acoustic waves are already two of the very few phononic technologies of industrial relevance and can been found in a myriad of devices employing these nanoscale earthquakes on a chip. Acoustic radio frequency filters, for instance, are integral parts of wireless devices. SAWs in particular find applications in life sciences and microfluidics for sensing and mixing of tiny amounts of liquids. In addition to this continuously growing number of applications, SAWs are ideally suited to probe and control elementary excitations in condensed matter at the limit of single quantum excitations. Even collective excitations, classical or quantum are nowadays coherently interfaced by SAWs. This wide, highly diverse, interdisciplinary and continuously expanding spectrum literally unites advanced sensing and manipulation applications. Remarkably, SAW technology is inherently multiscale and spans from single atomic or nanoscopic units up even to the millimeter scale. The aim of this Roadmap is to present a snapshot of the present state of surface acoustic wave science and technology in 2019 and provide an opinion on the challenges and opportunities that the future holds from a group of renown experts, covering the interdisciplinary key areas, ranging from fundamental quantum effects to practical applications of acoustic devices in life science