2,794 research outputs found
Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
The influence of interface roughness scattering (IRS) on the performances of
silicon nanowire field-effect transistors (NWFETs) is numerically investigated
using a full 3D quantum transport simulator based on the atomistic sp3d5s*
tight-binding model. The interface between the silicon and the silicon dioxide
layers is generated in a real-space atomistic representation using an
experimentally derived autocovariance function (ACVF). The oxide layer is
modeled in the virtual crystal approximation (VCA) using fictitious SiO2 atoms.
-oriented nanowires with different diameters and randomly generated
surface configurations are studied. The experimentally observed ON-current and
the threshold voltage is quantitatively captured by the simulation model. The
mobility reduction due to IRS is studied through a qualitative comparison of
the simulation results with the experimental results
Efficient and realistic device modeling from atomic detail to the nanoscale
As semiconductor devices scale to new dimensions, the materials and designs
become more dependent on atomic details. NEMO5 is a nanoelectronics modeling
package designed for comprehending the critical multi-scale, multi-physics
phenomena through efficient computational approaches and quantitatively
modeling new generations of nanoelectronic devices as well as predicting novel
device architectures and phenomena. This article seeks to provide updates on
the current status of the tool and new functionality, including advances in
quantum transport simulations and with materials such as metals, topological
insulators, and piezoelectrics.Comment: 10 pages, 12 figure
NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants
We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 Ă 4.2 nm2 cross-section. We model the dopants in a fully atomistic way. The dopant distributions are randomly generated following an average doping concentration of 1020 cmâ3. Elastic and inelastic phonon scattering is considered in our simulation. Considering the dopants in adiscrete way is the first step in the simulation of random dopant variability in junctionlesstransistors in a fully quantum mechanical way. Our results show that, for devices with an âunluckyâ dopants configuration, where there is a starvation of donors under the gate, the threshold voltage can increase by a few hundred mV relative to devices with a more homogeneous distribution of dopants. For the first time we have used a quantum transport model with dissipation to evaluate the change in threshold voltage and subthreshold slope due to the discrete random donors in the channel of ajunctionlessnanowire nMOS transistor. These calculations require a robust convergence scheme between the quantum transport equation and the Poisson equation in order to achieve convergence in the dopant-induced resonance regime
Thermal Transport Across Graphene Step Junctions
Step junctions are often present in layered materials, i.e. where
single-layer regions meet multi-layer regions, yet their effect on thermal
transport is not understood to date. Here, we measure heat flow across graphene
junctions (GJs) from monolayer to bilayer graphene, as well as bilayer to
four-layer graphene for the first time, in both heat flow directions. The
thermal conductance of the monolayer-bilayer GJ device ranges from ~0.5 to
9.1x10^8 Wm-2K-1 between 50 K to 300 K. Atomistic simulations of such GJ device
reveal that graphene layers are relatively decoupled, and the low thermal
conductance of the device is determined by the resistance between the two
dis-tinct graphene layers. In these conditions the junction plays a negligible
effect. To prove that the decoupling between layers controls thermal transport
in the junction, the heat flow in both directions was measured, showing no
evidence of thermal asymmetry or rectification (within experimental error
bars). For large-area graphene applications, this signifies that small bilayer
(or multilayer) islands have little or no contribution to overall thermal
transport
- âŠ