Evaluating the cooling rate of hot mix asphalt in tropical climate

This paper aims to investigate the environmental effect on cooling rate and to determine the appropriate time available for compaction (TAC) using laboratory tests. This includes the study parameters, namely solar flux, base and ambient temperatures (daytime and night-time paving) and wind velocity, focusing on hot mix asphalt (HMA) asphalt concrete wearing with 14 mm nominal maximum aggregate size (ACW14) mix type for the wearing course and ACB28 mix type for the binder course. Samples were prepared in slab moulds 30.5 cm × 30.5 cm × 5 cm and compacted using a manually operated steel-roller. Readings were taken by averaging the temperature measurements at the middle and surface of the slabs and a temperature of 160 ºC was used as the mixing temperature. A control sample was prepared for each mix type and tested in the laboratory without the influence of wind velocity and solar flux. It was found that the cooling rate of HMA is significantly affected by environmental factors, thus influencing the TAC. The TAC tends to decrease by 15-50% during windy and night conditions but increases by up to 100% during daytime conditions compared to the control samples

Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy

Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved performance compared to silicon, but currently they are relegated to applications in high-value or niche markets due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis using hydride vapor phase epitaxy that has the potential to lower III-V semiconductor deposition costs by orders of magnitude while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. The emergence of a low-cost III-V deposition technique will enable III-V electronic and opto-electronic devices, with all the benefits that they bring, to permeate throughout modern society.Comment: pre-prin

Chemical patterning for the highly specific and programmed assembly of nanostructures

We have developed a new chemical patterning technique based on standard lithography-based processes to assemble nanostructures on surfaces with extraordinarily high selectivity. This patterning process is used to create patterns of aminosilane molecular layers surrounded by highly inert poly (ethylene glycol) (PEG) molecules. While the aminosilane regions facilitate nanostructure assembly, the PEG coating prevents adsorption of molecules and nanostructures, thereby priming the semiconductor substrate for the highly localized and programmed assembly of nanostructures. We demonstrate the power and versatility of this manufacturing process by building multilayered structures of gold nanoparticles attached to molecules of DNA onto the aminosilane patterns, with zero nanocrystal adsorption onto the surrounding PEG regions. The highly specific surface chemistry developed here can be used in conjunction with standard microfabrication and emerging nanofabrication technology to seamlessly integrate various nanostructures with semiconductor electronics