SimpleSSD: Modeling Solid State Drives for Holistic System Simulation

Existing solid state drive (SSD) simulators unfortunately lack hardware and/or software architecture models. Consequently, they are far from capturing the critical features of contemporary SSD devices. More importantly, while the performance of modern systems that adopt SSDs can vary based on their numerous internal design parameters and storage-level configurations, a full system simulation with traditional SSD models often requires unreasonably long runtimes and excessive computational resources. In this work, we propose SimpleSSD, a highfidelity simulator that models all detailed characteristics of hardware and software, while simplifying the nondescript features of storage internals. In contrast to existing SSD simulators, SimpleSSD can easily be integrated into publicly-available full system simulators. In addition, it can accommodate a complete storage stack and evaluate the performance of SSDs along with diverse memory technologies and microarchitectures. Thus, it facilitates simulations that explore the full design space at different levels of system abstraction.Comment: This paper has been accepted at IEEE Computer Architecture Letters (CAL

Dynamic Binary Translation for Embedded Systems with Scratchpad Memory

Embedded software development has recently changed with advances in computing. Rather than fully co-designing software and hardware to perform a relatively simple task, nowadays embedded and mobile devices are designed as a platform where multiple applications can be run, new applications can be added, and existing applications can be updated. In this scenario, traditional constraints in embedded systems design (i.e., performance, memory and energy consumption and real-time guarantees) are more difficult to address. New concerns (e.g., security) have become important and increase software complexity as well. In general-purpose systems, Dynamic Binary Translation (DBT) has been used to address these issues with services such as Just-In-Time (JIT) compilation, dynamic optimization, virtualization, power management and code security. In embedded systems, however, DBT is not usually employed due to performance, memory and power overhead. This dissertation presents StrataX, a low-overhead DBT framework for embedded systems. StrataX addresses the challenges faced by DBT in embedded systems using novel techniques. To reduce DBT overhead, StrataX loads code from NAND-Flash storage and translates it into a Scratchpad Memory (SPM), a software-managed on-chip SRAM with limited capacity. SPM has similar access latency as a hardware cache, but consumes less power and chip area. StrataX manages SPM as a software instruction cache, and employs victim compression and pinning to reduce retranslation cost and capture frequently executed code in the SPM. To prevent performance loss due to excessive code expansion, StrataX minimizes the amount of code inserted by DBT to maintain control of program execution. When a hardware instruction cache is available, StrataX dynamically partitions translated code among the SPM and main memory. With these techniques, StrataX has low performance overhead relative to native execution for MiBench programs. Further, it simplifies embedded software and hardware design by operating transparently to applications without any special hardware support. StrataX achieves sufficiently low overhead to make it feasible to use DBT in embedded systems to address important design goals and requirements

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

HMC-Based Accelerator Design For Compressed Deep Neural Networks

Deep Neural Networks (DNNs) offer remarkable performance of classifications and regressions in many high dimensional problems and have been widely utilized in real-word cognitive applications. In DNN applications, high computational cost of DNNs greatly hinder their deployment in resource-constrained applications, real-time systems and edge computing platforms. Moreover, energy consumption and performance cost of moving data between memory hierarchy and computational units are higher than that of the computation itself. To overcome the memory bottleneck, data locality and temporal data reuse are improved in accelerator design. In an attempt to further improve data locality, memory manufacturers have invented 3D-stacked memory where multiple layers of memory arrays are stacked on top of each other. Inherited from the concept of Process-In-Memory (PIM), some 3D-stacked memory architectures also include a logic layer that can integrate general-purpose computational logic directly within main memory to take advantages of high internal bandwidth during computation. In this dissertation, we are going to investigate hardware/software co-design for neural network accelerator. Specifically, we introduce a two-phase filter pruning framework for model compression and an accelerator tailored for efficient DNN execution on HMC, which can dynamically offload the primitives and functions to PIM logic layer through a latency-aware scheduling controller. In our compression framework, we formulate filter pruning process as an optimization problem and propose a filter selection criterion measured by conditional entropy. The key idea of our proposed approach is to establish a quantitative connection between filters and model accuracy. We define the connection as conditional entropy over filters in a convolutional layer, i.e., distribution of entropy conditioned on network loss. Based on the definition, different pruning efficiencies of global and layer-wise pruning strategies are compared, and two-phase pruning method is proposed. The proposed pruning method can achieve a reduction of 88% filters and 46% inference time reduction on VGG16 within 2% accuracy degradation. In this dissertation, we are going to investigate hardware/software co-design for neural network accelerator. Specifically, we introduce a two-phase filter pruning framework for model compres- sion and an accelerator tailored for efficient DNN execution on HMC, which can dynamically offload the primitives and functions to PIM logic layer through a latency-aware scheduling con- troller. In our compression framework, we formulate filter pruning process as an optimization problem and propose a filter selection criterion measured by conditional entropy. The key idea of our proposed approach is to establish a quantitative connection between filters and model accuracy. We define the connection as conditional entropy over filters in a convolutional layer, i.e., distribution of entropy conditioned on network loss. Based on the definition, different pruning efficiencies of global and layer-wise pruning strategies are compared, and two-phase pruning method is proposed. The proposed pruning method can achieve a reduction of 88% filters and 46% inference time reduction on VGG16 within 2% accuracy degradation