Electrical overstress and electrostatic discharge failure in silicon MOS devices

This thesis presents an experimental and theoretical investigation of electrical failure in MOS structures, with a particular emphasis on short-pulse and ESD failure. It begins with an extensive survey of MOS technology, its failure mechanisms and protection schemes. A program of experimental research on MOS breakdown is then reported, the results of which are used to develop a model of breakdown across a wide spectrum of time scales. This model, in which bulk-oxide electron trapping/emission plays a major role, prohibits the direct use of causal theory over short time-scales, invalidating earlier theories on the subject. The work is extended to ESD stress of both polarities. Negative polarity ESD breakdownis found to be primarily oxide-voltage activated, with no significant dependence on temperature of luminosity. Positive polarity breakdown depends on the rate of surface inversion, dictated by the Si avalanche threshold and/or the generation speed of light-induced carriers. An analytical model, based upon the above theory is developed to predict ESD breakdown over a wide range of conditions. The thesis ends with an experimental and theoretical investigation of the effects of ESD breakdown on device and circuit performance. Breakdown sites are modelled as resistive paths in the oxide, and their distorting effects upon transistor performance are studied. The degradation of a damaged transistor under working stress is observed, giving a deeper insight into the latent hazards of ESD damage

Analysis of design strategies for RF ESD problems in CMOS circuits

This thesis analyses the design strategies used to protect RF circuits that are implemented in CMOS technologies. It investigates, in detail, the physical mechanisms involved when a ggNMOS structure is exposed to an ESD event and undergoes snapback. The understanding gained is used to understand why the performance of the current RF ESD clamp is poor and suggestions are made as to how the performance of ggNMOS clamps can be improved beyond the current body of knowledge. The ultimate aim is to be able to design effective ESD protection clamps whilst minimising the effect the circuit has on RF I/O signals. A current ggNMOS based RF ESD I/O protection circuit is analysed in detail using a Transmission Line Pulse (TLP) tester. This is shown to be a very effective diagnostic tool by showing many characteristics of the ggNMOS during the triggering and conducting phase of the ESD event and demonstrate deficiencies in the clamp design. The use of a FIB enhances the analysis by allowing the isolation of individual components in the circuit and therefore their analysis using the TLP tester. SPICE simulations are used to provide further commentary on the debate surrounding the specification required of a TLP tester for there to be a good correlation between a TLP test and the industry standard Human Body Model (HBM) ESD test. Finite element simulations are used to probe deeper in to the mechanisms involved when a ggNMOS undergoes snapback especially with regard to the contribution parasitic components within the ggNMOS make to the snapback process. New ggNMOS clamps are proposed which after some modification are shown to work. Some of the finite element experiments are repeated in a 0.18μπ7. process CMOS test chip and a comparison is made between the two sets of results. In the concluding chapter understanding that has been gained from previous chapters is combined with the published body of knowledge to suggest and explain improvements in the design of a ggNMOS for RF and standard applications. These improvements will improve homogeneity of ggNMOS operation thus allowing the device size to be reduced and parasitic loading for a given ESD performance. These techniques can also be used to ensure that the ESD current does not take an unintended path through the chip

Failures caused by supply fluctuations during system-level ESD

It is necessary to design robust electronic systems against system-level electrostatic discharge (ESD). In additional to withstanding ESD without hard failures (permanent damage), it is important that the system is robust against soft failures (recoverable loss of function or data), which can be caused by ESD-induced noise on signal inputs and power nets. Besides radiation, the current injection into the circuit alone can cause these disturbances, especially the sharp current spike of a high amplitude in system-level ESD. The waveform of this current is similar in various ESD test setups. Circuit models with distributed elements enable accurate modeling of the system-level ESD current in contact discharge. Experiments have shown that ESD-induced noise on signal traces starts to disturb the IO input at very low ESD levels, and the effectiveness of the transient voltage suppressor (TVS) on board is limited. The noise on supply is global to integrated circuit (IC), as it travels across all the power domains. The waveform of the noise depends on the polarity of the ESD current and the type of ESD protection. The experiments have shown that the supply fluctuation can be quite severe, as a strong reverse of the on-chip supply is indicated by monitor circuits starting from the ESD levels below the common required passing level. This poses a requirement of a minimum amount of on-chip decoupling capacitances (decaps) to limit the amplitude of supply fluctuations. This requirement is similar whether the supply voltage is generated on-chip or off-chip, as long as a large amount of off-chip decap is used and connected to the board ground. If the supply voltage is generated on-chip, the regulator needs to be carefully designed against ESD induced noise. In addition, the rail clamp, if not optimized, deteriorates the power integrity with its instability. The ESD-induced supply fluctuation may cause latch-up without careful attention to the well-bias scheme

ESD circuit design and measurement techniques

Part 1 of this thesis presents a method to measure sub-nanosecond reverse recovery in wafer-level test structures. The setup uses a transmission line pulse generator with a time domain through connection to measure the device under test current. The setup is then used to measure reverse recovery in a 65 nm CMOS ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and forward bias behavior. Part 2 of this thesis reports the design and fabrication of an active feedback based high-voltage tolerant power clamp with optimally biased positive and negative feedback to bypass the trade-off between ESD performance and mis-trigger immunity. The circuit was fabricated in 28 nm CMOS, and characterization results show a 70% improvement in failure current over previous designs while maintaining mis-trigger immunity

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

The Fifth NASA Symposium on VLSI Design

The fifth annual NASA Symposium on VLSI Design had 13 sessions including Radiation Effects, Architectures, Mixed Signal, Design Techniques, Fault Testing, Synthesis, Signal Processing, and other Featured Presentations. The symposium provides insights into developments in VLSI and digital systems which can be used to increase data systems performance. The presentations share insights into next generation advances that will serve as a basis for future VLSI design

NASA/SDIO Space Environmental Effects on Materials Workshop, part 2

The National Aeronautics and Space Administration (NASA) and the Strategic Defense Initiative Organization (SDIO) cosponsored a workshop on Space Environmental Effects on Materials. The joint workshop was designed to inform participants of the present state of knowledge regarding space environmental effects on materials and to identify knowledge gaps that prevent informed decisions on the best use of advanced materials in space for long duration NASA and SDIO missions. Establishing priorities for future ground based and space based materials research was a major goal of the workshop. The end product of the workshop was an assessment of the current state-of-the-art in space environmental effects on materials in order to develop a national plan for spaceflight experiments

A Comprehensive Fault Model for Concurrent Error Detection in MOS Circuits

Naval Electronics Sys. Comm. and Office of Naval Research / N00039-80-C-0556Ope

NASA Tech Briefs, December 1989

Topics include: Electronic Components and Circuits. Electronic Systems, Physical Sciences, Materials, Computer Programs, Mechanics, Machinery, Fabrication Technology, Mathematics and Information Sciences, and Life Sciences